Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing

The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650degreesC and 900degreesC. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Selective formation of aromatic amines by selenium-catalyzed reduction of aromatic nitro compounds with CO/H2O under atmospheric pressure

An efficient method for the catalytic reduction of aromatic nitro compounds to the corresponding aromatic amines is reported. In the presence of selenium as a catalyst, the aromatic nitro compounds are quantitively reduced by CO/H2O to form the corresponding amines under atmospheric pressure. The reduction occurs in high selectivity regardless of other reducible functionalities present on the aromatic ring. There exists a phase transfer process of the catalyst selenium in the reaction. (C) 2004 Elsevier B.V. All rights reserved.

Probing into the catalytic nature of Co/sulfated zirconia for selective reduction of NO with methane

In this work, the structural and surface properties of Co-loaded sulfated zirconia (SZ) catalysts were studied by X-ray diffraction (XRD), N-2 adsorption, NH3-TPD, FT-IR spectroscopy, H-2-TPR, UV-vis diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), and NO-TPD. NH3-TPD and FT-IR spectra results of the catalysts showed that the sulfation process of the support resulted in the generation of strong Bronsted and Lewis acid sites, which is essential for the SCR of NO with methane. On the other hand, the N-2 adsorption, H-2-TPR, UV/vis DRS, and XPS of the catalysts demonstrated that the presence of the SO42- species promoted the dispersion of the Co species and prevented the formation Of Co3O4. Such an increased dispersion of Co species suppressed the combustion reaction of CH4 by O-2 and increased the selectivity toward NO reduction. The NO-TPD proved that the loading of Co increased the adsorption of NO over SZ catalysts, which is another reason for the promoting effect of Co. (C) 2004 Elsevier Inc. All rights reserved.