Structural, photoluminescence, and field emission properties of vertically well-aligned ZnO nanorod arrays

The self-assembled growth of vertically well-aligned ZnO nanorod arrays with uniform length and diameter on Si substrate has been demonstrated via thermal evaporation and vapor-phase transport. The structural, photoluminescence (PL), and field emission properties of the as-prepared nanorod arrays were investigated. The PL spectrum at 10 K shows a strong and sharp near-band gap emission (NBE) peak ( full width at half-maximum (FWHM) = 4.7 meV) and a weak neglectable deep-level emission (DL) peak (I-NBE/I-DL= 220), which implies its good crystallinity and high optical quality. The room-temperature NBE peak was deduced to the composition of free exciton and its first-order replicas emissions by temperature-dependent PL spectra. The field emission measurements indicate that, with a vacuum gap of 400 Am, the turn-on field and threshold field is as low as 2.3 and 4.2 V/mu m. The field enhancement factor beta and vacuum gap d follows a universal equation.

Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD

AlxInyGa1-x-yN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures from 800 to 870degreesC. The incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of Al remains nearly constant. The optical properties of the samples have been investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL) at different temperatures. The results show that the sample grown at 820 C exhibits the best optical quality for its large PL intensity and the absence of the yellow luminescence. Furthermore the temperature-dependent PL and TRPL of the sample reveals its less exciton localization effect caused by alloy fluctuations. In the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesC, in good agreement with the PL results, The improvement of AlxInyGa1-x-yN quality is well correlated with the incorporation of indium into AlGaN and the possible mechanism is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well

Variable temperature photoluminescence (PL) measurements for In0.3Ga0.7As(6 nm)/GaAs(34 nm) quantum dot superlattices with a period of 20 and an In0.3Ga0.7As(6 nm)/GaAs(34 nm) reference single quantum well have been conducted. It is found that the temperature dependence is different between the quantum dots and the reference single quantum well. The PL peak energy of the single quantum well decreases faster than that of the quantum dots with increasing temperature. The PL peak energy for the InGaAs/GaAs quantum dots closely follows the InAs band gap in the temperature range from 11 to 170 K, while the PL peak energy for the InGaAs/GaAs quantum well closely follows the GaAs band gap. In comparison with InAs/GaAs quantum dots, the InGaAs/GaAs quantum dots are more typical as a zero-dimensional system since the unusual PL results, which appear in the former, are not obvious for the latter. (C) 1999 American Institute of Physics. [S0021-8979(99)08615-6].

Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G

High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP

Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.

Controllable Synthesis and Luminescence Properties of La(OH)(3) and La(OH)(3):Tb3+ Nanocrystals with Multiform Morphologies

One-dimensional La(OH)(3) nanocrystals with multiform morphologies have been successfully synthesized by a facile bydrothermal process without using any surfactant, catalyst, or template. It can be found that the pH values of the initial solutions and the alkaline sources play a crucial role in controlling the morphologies of the products. The possible formation process of the 1D samples was investigated in detail, Furthermore, the as-prepared Tb3+-doped La(OH)(3) samples show a strong green emission corresponding to D-5(4)-F-7(5) transition of the Tb3+ ions under ultraviolet or low-voltage excitation.

Different electronic structures and spectroscopic properties of cationic [M(ppy)2(N--N)]+ (M = Rh, Ir; N--N = Hcmbpy, H2dcbpy), a DFT study.

We report a comparative quantum-chemical study of the electronic structures and optical properties of a series of cationic complexes [M(ppy)(2)(N--N)](+) (N--N = Hcmbpy = 4-carboxy-4'-methylbpy, M = Rh (Rh1), Ir(Ir2); N--N = H(2)dcbpy = 4,4'-dicarboxy-bpy, M = Rh (Rh3) and Ir (Ir4)). The theoretical calculation reveals that the increased number of -COOH groups on the bpy ligand can decrease the energy levels of LUMO more than HOMO and narrow down the HOMO-LUMO energy gaps, which results in the red-shifted of the lowest-lying absorption and phosphorescent spectra. The lowest-lying singlet absorptions were categorized as d(M,M = Rh or Ir) + pi(ppy) -->pi*(bpy) with MLCT and LLCT characters.

Synthesis and Luminescent Properties of LaAlO3:RE3+ (RE = Tm, Tb) Nanocrystalline Phosphors via a Sol-Gel Process

LaAlO3:Tm3+ and LaAlO3:Tb3+ phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. The XRD results reveal that the fully crystalline pure LaAlO3 Phase can be obtained at 800 degrees C. The FE-SEM image indicates that the phosphor samples are composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of ultraviolet light (230 nm) and low-voltage electron beams (1-3 kV), the LaAlO3:Tm3+ and LaAlO3:Tb3+ phosphors show the characteristic emissions of Tb3+ (D-1(2)-> H-3(6,4),F-3(4) transitions) and Tm3+ (D-5(3,4)-> F-7(6,5,4,3) transitions) respectively. The CL of the LaAlO3:Tm3+ phosphors have high color purity and comparable intensity to the Y2SiO5:Ce3+ commercial product, and the CL colors of Tb3+-doped LaAlO3 phosphors can be tuned from blue to green by changing the doping concentration of Tb3+ to some extent.

Synthesis and luminescence properties of monodisperse spherical Y2O3 : Eu3+@SiO2 particles with core-shell structure

Y2O3: Eu3+ phosphor layers were deposited on monodisperse SiO2 particles with different sizes ( 300, 500, 900, and 1200 nm) via a sol-gel process, resulting in the formation of Y2O3: Eu3+@SiO2 core-shell particles. X-ray diffraction ( XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy ( TEM), time-resolved photoluminescence ( PL) spectra, and lifetimes were employed to characterize the Y2O3: Eu3+@SiO2 core-shell samples. The results of XRD indicated that the Y2O3: Eu3+ layers began to crystallize on the silica surfaces at 600 degrees C and the crystallinity increased with the elevation of annealing temperature until 900 degrees C. The obtained core-shell particles have perfect spherical shape with narrow size distribution and non-agglomeration. The thickness of the shells could be easily controlled by changing the number of deposition cycles ( 60 nm for three deposition cycles). Under the excitation of ultraviolet ( 250 nm), the Eu3+ ion mainly shows its characteristic red ( 611 nm, D-5(0)-F-7(2)) emissions in the core-shell particles from Y2O3: Eu3+ shells.

Facile Surfactant- and Template-Free Synthesis and Luminescent Properties of One-Dimensional Lu2O3:Eu3+ Phosphors

Uniform Lu2O3:Eu3+ nanorods and nanowires have been successfully prepared through a simple solution-based hydrothermal process followed by a subsequent calcination process without using any surfactant, catalyst, or template. On the basis of X-ray diffraction, thermogravimetric analysis and differential scanning calorimetry, and Fourier transform infrared spectroscopy results, it can be assumed that the as-obtained precursors have the structure formula of Lu4O(OH)(9)(NO3), which is a new phase and has not been reported. The morphology of the precursors could be modulated from nanorods to nanowires with the increase of pH value using ammonia solution. The as-formed precursors could transform to cubic Lu2O3:Eu3+ with the same morphology and a slight shrinkage in size after an annealing process, Both the Lu2O3:Eu3+ nanorods and nanowires exhibit the strong red emission corresponding to the D-5(0)-F-7(2) transition of the Eu3+ ions under UV light excitation or low-voltage electron beam excitation.

Highly uniform and monodisperse beta-NaYF4 : Ln(3+) (Ln = Eu, Tb, Yb/Er, and Yb/Tm) hexagonal microprism crystals: Hydrothermal synthesis and luminescent properties

beta-NaYF4:Ln(3+) (Ln = Eu, Tb, Yb/Er, and Yb/Tm) hexagonal microprisms with remarkably uniform morphology and size have been synthesized via a facile hydrothermal route. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra as well as kinetic decays were used to characterize the samples. It is found that sodium citrate as a shape modifier introduced into the reaction system plays a critical role in the shape evolution of the final products. Furthermore, the shape and size of the products can be further manipulated by adjusting the molar ratio of citrate/RE3+ (RE represents the total amount of Y3+ and the doped rare earth elements such as Eu3+, Tb3+, Yb3+/Er3+, or Yb3+/Tm3+). Under the excitation of 397 nm ultraviolet light, NaYF4:xEu(3+) (x = 1.5, 5%) shows the emission lines of Eu3+ corresponding to D-5(0-3) -> F-7(J) (J = 0-4) transitions from 400 to 700 nm (whole visible spectral region) with different intensity, resulting in yellow and red down-conversion (DC) light emissions, respectively.

Sol-gel growth of Gd2MoO6 : Eu3+ nanocrystalline layers on SiO2 spheres (SiO2@Gd2MoO6 : Eu3+) and their luminescent properties

SiO2@Gd2MoO6:EU3+ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy ITEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO2@Gd2MoO6:Eu3+ core-shell phosphors. The XRD results demonstrate that the Gd2MoO6:Eu3+ layers on the SiO2 spheres begin to crystallize after annealing at 600 degrees C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 600 nm), are not agglomerated, and have a smooth surface. The thickness of the Gd2MoO6:Eu3+ shells on the SiO2 cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). The Eu3+ shows a strong PL luminescence (dominated by D-5(0)-F-7(2) red emission at 613 nm) under the excitation of 307 nm UV light.

The optical spectroscopic properties of rare earth-activated barium orthophosphate in VUV-Vis range

The optical properties of rare earth ions-activated barium orthophosphate phosphors, Ba-3(PO4)(2):RE (RE = Ce3+, Sm3+, Eu3+, Eu2+, and Tb3+), were investigated in vacuum ultraviolet (VLTV)-Vis range. A band-band transition Of PO43- in Ba-3(PO4)(2) is observed in the region of 150-170 nm. The partial reduction of Eu3+ to Eu2+ was observed and confirmed by luminescent spectra under the VUV-UV excitation. It is proposed that the electronegative defects that formed by aliovalent substitution of Eu3+ on the Ba2+ site in the host are responsible for the reduction process.