Chemisorption and reaction characteristics of methyl radicals on Cu(110)

Methyl radicals are generated by pyrolysis of azomethane, and the condition for achieving neat adsorption on Cu(110) is described for studying their chemisorption and reaction characteristics. The radical-surface system is examined by X-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy, temperature-programmed desorption, low-energy electron diffraction (LEED), and high-resolution electron energy loss spectroscopy under ultrahigh vacuum conditions. It is observed that a small fraction of impinging CH3 radicals decompose into methylene possibly on surface defect sites. This type of CH2 radical has no apparent effect on CH3(ads) surface chemistry initiated by dehydrogenation to form active CH2(ads) followed by chain reactions to yield high-mass alkyl products. All thermal desorption products, such as H-2, CH4, C2H4, C2H6, and C3H6, are detected with a single desorption peak near 475 K. The product yields increase with surface coverage until saturation corresponding to 0.50 monolayer of CH3(ads). The mass distribution is, however, invariant with initial CH3(ads) coverage, and all desorbed species exhibit first-order reaction kinetics. LEED measurement reveals a c(2 x 2) adsorbate structure independent of the amount of gaseous exposure. This strongly suggests that the radicals aggregate into close-packed two-dimensional islands at any exposure. The islanding behavior can be correlated with the reaction kinetics and is deemed to be essential for the chain propagation reactions. Some relevant aspects of the CH3/Cu(111) system are also presented. The new results are compared with those of prior studies employing methyl halides as radical sources. Major differences are found in the product distribution and desorption kinetics, and these are attributed to the influence of surface halogen atoms present in those earlier investigations.

Ionic liquids Supported Growth of Highly Ordered Microdroplets Induced by Fluidic Leakage at Poly(dimethylsiloxane) Interfaces

"Fluidic leakage" caused by vacuum force at the reversible sealing poly(dimethylsiloxane) (PDMS) interfaces was converted to one useable avenue, which led to formation of highly ordered surfactant microdroplets functionalized with ionic liquids (ILs). Vacuum force is the prerequisite to lead constant microsolutions to diffuse to the PDMS interfaces. Imidazolium ions of ILs rendered structural rearrangement of the surfactant aggregates and the ordered droplets formation.

Undercut structure fabricated by complementary-structure micropatterning technique for the passive-matrix display of organic light-emitting diodes

This paper reports a new patterning method, the complementary-structure micropatterning (CSMP) technique, to fabricate the undercut structures for the passive-matrix display of organic light-emitting diodes (OLEDs). First, the polyvinylpyrrolidone (PVP) stripe patterns with a trapeziform cross-section were formed by micromolding in capillaries. Then the photoresist was spin coated on the substrate with the patterned PVP stripes and developed in water.

Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine

In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270.

The morphology control of pentacene for write-once-read-many-times memory devices

We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

Adhesive strength of new thermal barrier coatings of rare earth zirconates

La2Zr2O7 (LZ) and La-2(Zr0.7Ce0.3)(2)O-7 (LZ7C3) as novel candidate materials for thermal barrier coatings (TBCs) were prepared by electron beam-physical vapor deposition (EB-PVD). The adhesive strength of the as-deposited LZ and LZ7C3 coatings were evaluated by transverse scratch test. Meanwhile, the factors affecting the critical load value were also investigated. The critical load value of LZ7C3 coating is larger than that of LZ coating, whereas both values of these two coatings are lower than that of the traditional coating material, i.e. 8 wt% yttria stabilized zirconia (8YSZ). The micro-cracks formed in the scratch channel can partially release the stress in the coating and then enhance the adhesive strength of the coating. The width of the scratch channel and the surface spallation after transverse scratch test are effective factors to evaluate the adhesive strength of LZ and LZ7C3 coatings.

Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold

A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.

The luminescence of CaYBO4 : RE3+ (RE=Eu, Gd, Tb, Ce) in VUV-visible region

Phosphors CaYBO4:RE3+ (RE = Eu, Gd, Tb, Ce) were synthesized with the method of solid-state reaction at high temperature, and their vacuum ultraviolet (VUV)-visible luminescent properties in VUV-visible region were studied at 20 K. In CaYBO4, it is confirmed that there are two types of lattice sites that can be substituted by rare-earth ions. The host excitation and emission peaks of undoped CaYBO4 are very weak, which locate at about 175 and 350-360nm, respectively. The existence of Gd3+ can efficiently enhance the utilization of host absorption energy and result in a strong emission line at 314 nm. In CaYBO4, Eu3+ has typical red emission with the strongest peak at 610 nm; Tb3+ shows characteristic green emission, of which the maximum emission peak is located at 542 nm. The charge transfer band of CaYBO4:Eu3+ was observed at 228 nm; the co-doping of Gd3+ and Eu3+ can obviously sensitize the red emission of Eu3+. The fluorescent spectra of CaYBO4:Ce3+ is very weak due to photoionization; the co-addition of Ce3+-Tb3+ can obviously quench the luminescence of Tb3+.

Oriented growth and luminescence of ZnO : Eu films prepared by sol-gel process

A series of Eu3+-doped ZnO films have been prepared by a sol-gel method. These films were characterized by X-ray diffraction (XRD) and photoluminecent spectra (PL). Effects of synthetic parameters, such as annealing atmosphere, temperature and concentration of doped ions, on the highly oriented crystal growth were studied in detail. The crystalline structures of films annealed in vacuum have a wurtzite symmetry with highly c-axis orientation. A characteristic D-5(0) -> F-7(J)(J = 1, 2, 3 and 4) red emission is observed due to energy transfer from the ZnO host to the doped Eu3+ in the c-oriented ZnO films.

Preparation of W-Al-Mo ternary alloys by mechanical alloying

Single phase WxAl(50)Mo(50)-X (X=40, 30, 20 and 10) powders have been synthesized directly by mechanical alloying (MA). The structural evolutions during MA and subsequent as-milled powders by annealing at 1400 degrees C have been analyzed using X-ray diffraction (XRD). Different from the Mo50Al50 alloy, W40Al50Mo10 and W30Al50Mo20 alloys were stable at 1400 degrees C under vacuum. The results of high-pressure sintering indicated that the microhardnesses of two compositions, namely W40Al50Mo10 and W30Al50Mo20 alloys have higher values compared with W50Al50 alloy.

Processing, microstructure and mechanical properties of W50Al50 bulk alloy obtained by mechanical alloying and hot-pressing

The Al50W50 alloy bulk bodies were fabricated by using mechanical alloying and hot-pressing in this work. The Al50W50 alloy had excellent thermal stability up to 1300 degreesC under vacuum and Its optimum microhardness, bending strength and compressive strength were 10.21 GPa, 570 MPa and 2.07 GPa, respectively.

Synthesis, crystal structure, and density of (W1-xAlx)C

A new solid solution system of Al in WC, with the stoichiometry of (W1-xAlx)C (x = 0.10, 0.25, 0.50, 0.75, 0.86), has been synthesized by a solid-state reaction between W1-xAlx alloys and carbon at around 1673 K in vacuum. Environment scanning electron microscope, energy- dispersive analysis of X-ray, X-ray photoelectron spectroscopy, and inductively coupled plasma analyses are used to certify the formation of the products. The mechanism of the solid-state reaction is also discussed. (W1-xAlx)C is identified to crystallize in the hexagonal space group P6m2 (No. 187) and belongs to the WC structure type. The atoms of W and Al occupy the same lattice site (la site) in the cell of (W1-xAlx)C. The cell parameters for each specimen in the phase of W-AI-C are quite close to that of WC, while their densities are far lower than that of WC.

Robust core-shell supramolecular assemblies based on cationic vesicles and ring-shaped {Mo-154} polyoxomolybdate nanoclusters: Template-directed synthesis and characterizations

Substantial progress has been made recently in extending the supramolecular assembly of biomimetic structures to vesicle-based sophisticated nanocomposites and mesostructures. We report herein the successful preparation of unilamellar surfactant vesicles coated with a monolayer of ring-shaped {Mo-154} polyoxometalate (POM) nanoclusters, (NH4)(28)[Mo-154 (NO)(14)O(448)Hi(4)(H2O)(70)].approximate to 350H(2)O, by coulomb attractions using preformed didodecyldimethylammonium bromide (DDAB) surfactant vesicles as templates. The resultant vesicle-templated supramolecular assemblies are robust (they do not disintegrate upon dehydration) both at room-temperature ambient and vacuum conditions, as characterized by conventional transmission electron microscopy (TEM) and atomic force microscopy (AFM). The flexibility of the complex soft assemblies was also revealed by AFM measurements. The effect of POM-vesicle coulomb attractions on the dimensions of the templating vesicles was also investigated by using dynamic light scattering (DLS).Although origins of the structure stability of the as-prepared supramolecular assemblies are not clear yet, the nanometer scale cavities and the related properties of macroions of the POM clusters may play an important role in it.

Electrolummescence from (5)Do -> F-7(J) and D-5(1) -> F-7(J) (J=0-4) transitions with a europium complex as emitter

Electroluminescence (EL) devices with Eu(HTH)(3)phen [HTH: 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)-1,3-hexanedione, phen: I 10-phenanthroline] as an emissive centre were fabricated using vacuum evaporation. In addition to the Eu3+ 5D0 --> F-7(J) (J = 0-4) lines that were visible in the photoluminescence signal, the device also showed strong emission from the D-5(1) --> F-7(J) (J = 0-4) transitions. The enhanced emission from the D-5(1) F-7(J) (J = 0-4) transitions was attributed to the increased excitation intensity in the EL device. The luminescence lifetimes of the 5 D, and 5 Do levels were measured to be 0.6 mus and 866 mus, respectively.

VIV-UV excited luminescent properties of LnCa4O(BO3)3 : RE3+(Ln = Y, La, Gd; Re=Eu, Tb, Dy, Ce)

Calcium lanthanide oxyborate doped with rare-earth ions LnCa(4)O(BO3)(3):RE3+ (LnCOB:RE, Ln = Y, La, Gd, RE = Eu, Tb, Dy, Cc) was synthesized by the method of solid-state reaction at high temperature. Their fluorescent spectra were measured from vacuum ultraviolet (VUV) to visible region at room temperature. Their excitation spectra all have a broadband center at about 188 nm, which is ascribed to host absorption. Using Dorenbos' and J phi rgensen's work [P. Dorenbos, J. Lumin. 91 (2000) 91, R. Resfeld, C.K. J phi rgensen. Lasers and Excite States of Rare Earth [M], Springer, Berlin, 1977, p. 45], the position of the lowest 5d levels E(Ln,A) and charge transfer band E-ct were calculated and compared with their excitation spectra.Eu3+ and Tb3+ ions doped into LnCOB show efficient luminescence under VUV and UV irradiation. In this system, Ce3+ ions do not show efficient luminescence and quench the luminescence of Tb3+ ions when Tb3+ and Ce3+ ions are co-doped into LnCOB. GdCOB doped with Dy3+ shows yellowish white light under irradiation of 254 nm light for the reason that Gd ions transfer the energy from itself to Dy.