342 resultados para Diode pumping


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在用半导体激光器抽运的单包层掺Yb调Q光纤激光器中观察到了清晰稳定的自锁模脉冲序列。脉冲包络形状为调Q脉冲。每个锁模脉冲的幅值由其在调Q脉冲中的相应位置决定。经过分析,认为自相位调制是调Q光纤激光器中产生锁模的主要原因。自相位调制的存在使得光脉冲的频谱被展宽,当这种展宽和腔的模式间隔相差不多时,腔内的模式便能相互作用,直到它们之间产生一个固定的相位关系。也即形成锁模。在此基础上。去掉声光晶体,并用两个光栅作为腔镜,实现了全光纤法布里-珀罗(F-P)腔锁模光纤激光器。改变腔结构,分别采用光栅和光纤反射圈作为

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Stable single-frequency and single-polarization distributed-feedback (DFB) fiber laser was realized by giving a pressure on the phase shift region of the fiber grating. The output wavelength of the DFB fiber laser is 1053 nm. When the pump power of 980 nm laser diode is 100 and 254 mW, the output power can reach 8.3 and 37.1 mW and the polarization extinction ratio was 26 and 20 dB, respectively. After chopped by Acousto-optic modulator (0.3 Hz), the pulse peak value variance is 4.65%(peak to peak) and 1.098% (RMS) for 31 min. (C) 2006 Elsevier Ltd. All rights reserved.

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综述了双包层光纤激光器端面、侧面和集中抽运耦合技术,分析表明侧面抽运耦合技术比端面抽运耦合技术更有利于获得高功率输出,其中分布包层抽运耦合技术是很理想的一种侧面抽运耦合方式。阐述了高功率光纤激光器的特点并介绍了光子晶体光纤和螺旋芯光纤的抽运耦合方式。

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用蒙特卡罗方法仿真了增益随机散射体中的非相干辐射,观察了非相干随机激光的特性。当抽运能量超过一定阈值时,散射体的整体辐射谱突然变窄;随着抽运能量继续增大,在光滑谱背景上会出现分离尖峰;散射体内空间某位置处频率组成不是单一的;辐射谱中某单个频率的空间方向分布和位置分布比较广。增益随机散射体中产生的非相干随机激光本质上既不同于无反馈的普通放大自发辐射,又不同于相干反馈形成的常规激光。解释了非相干随机激光辐射谱上出现分离尖峰的原因,出现这种现象是由于少数光子在增益散射体中经历较多次数散射后得到了相对充分的放大。

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研究了平均功率超过30 W的稳定高效全固态绿光激光器,分析得出影响全固态腔内倍频激光器倍频效率和输出稳定性的主要因素是倍频晶体局部温升造成的相位失配和热透镜效应,采用温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,降低激光器工作中倍频晶体内外温度梯度从而有效地克服因晶体局部温升造成的倍频相位匹配角失配和热透镜效应。采用三条60 W的半导体激光二极管阵列板条侧面抽运Nd:YAG激光增益介质棒,采用声光调Q,平凹直腔和腔内倍频结构配合温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,得到了稳定高效的532 nm

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固体热容激光器(SSHCL)作为高功率固体激光器的一个重要发展方向,引起人们广泛关注。数值模拟激光介质板条在热容方式下工作的温度和应力分布是了解该类激光器工作特性的一种有效手段,采用平面应力近似法导出了半导体激光器抽运热容激光介质板的二维温度和应力分布公式,同时也对二维抽运光吸收密度、介质板温度分布和折射率变化进行了分析与讨论。数值计算的结果表明二维效应的温度分布和应力分布要比一维效应给出的分布更均匀。

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Incorporating the shielded method and post-processing method, a 75 mW single frequency Yb-doped DFB fiber laser was obtained with a 250 mW laser diode pump source at 978 nm. The threshold of the laser is 2 mW. The laser is single-polarization operation and the output power fluctuation is less than 0.2 mW in one hour when the pump power is 250 mW.

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为了实现光参变放大抽运光源高稳定输出的目的。通过对倍频过程的数值模拟分析,提出倍频中存在“稳定区”的概念,在基频光强一定的条件下(小于倍频晶体破坏阈值),通过非共线双程倍频的方式或串联倍频的方式可有效延长倍频晶体的有效作用长度,保证倍频工作区能够被控制在“稳定区”内,从而实现高稳定高转换效率的倍频输出。实验数据验证了这一结论,实验中,利用非共线双程倍频的方式使得倍频工作区在“稳定区”内,对波动±5.7%的1064nm高斯脉冲基频光,倍频光波动小于±2%,脉冲形状为高阶高斯脉冲,转换效率大于70%,实验结果

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The time response of optical switching properties of Sb thin films under focused laser pulses is investigated. The results show that the response course can be divided into onset, opening, and closing stages. Formulas for their lengths are given. The onset and opening times decrease with increasing pumping light power density. The closing time is about 150 ns. For optical memory, if the power density of the readout and recording lasers changes from 5 x 10(9) to 15 x 10(9) W/m(2), the onset time changes from 2.5 to 0.30 mus, and the opening time is on the nanosecond scale. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

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A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure (Super-RENS) of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270 degrees C and the mass loss is about 48% in a narrow temperature region (15 degrees C). The complex refractive index N (N = n + ik) is measured. High refractive index (n = 2.45) and low extinction coefficient (k = 0.2) at the recording wavelength 650nm are attained. Static optical recording tests with and without Super-RENS are carried out using a 650nm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.

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Within the framework of classic electromagnetic theories, we have studied the sign of refractive index of optical medias with the emphases on the roles of the electric and magnetic losses and gains. Starting from the Maxwell equations for an isotropic and homogeneous media, we have derived the general form of the complex refractive index and its relation with the complex electric permittivity and magnetic permeability, i.e. n = root epsilon mu, in which the intrinsic electric and magnetic losses and gains are included as the imaginary parts of the complex permittivity and permeability, respectively, as epsilon = epsilon(r) + i(epsilon i) and mu = mu(r) + i mu(i). The electric and magnetic losses are present in all passive materials, which correspond, respectively, to the positive imaginary permittivity and permeability epsilon(i) > 0 and mu(i) > 0. The electric and magnetic gains are present in materials where external pumping sources enable the light to be amplified instead of attenuated, which correspond, respectively, to the negative imaginary permittivity and permeability epsilon(i) < 0 and mu(i) < 0. We have analyzed and determined uniquely the sign of the refractive index, for all possible combinations of the four parameters epsilon(r), mu(r), epsilon(i), and mu(i), in light of the relativistic causality. A causal solution requires that the wave impedance be positive Re {Z} > 0. We illustrate the results for all cases in tables of the sign of refractive index. One of the most important messages from the sign tables is that, apart from the well-known case where simultaneously epsilon < 0 and mu < 0, there are other possibilities for the refractive index to be negative n < 0, for example, for epsilon(r) < 0, mu(r) > 0, epsilon(i) > 0, and mu(i) > 0, the refractive index is negative n < 0 provided mu(i)/epsilon(i) > mu(r)/vertical bar epsilon(r)vertical bar. (c) 2006 Elsevier B.V. All rights reserved.

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半导体列阵量子效率高,输出波长范围涵盖570~1600nm,工作寿命可达数百万小时,叠层列阵可提供超高功率激光输出,在工业、医学等很多领域具有非常广阔的应用前景。但列阵在自由运行时,各发光单元发出的光是不相干的,输出质量差,采用1/4Talbot外腔镜耦合技术,列阵实现了空间锁相最高阶超模,然而唯有基超模远场分布是中心单瓣结构,输出接近衍射极限。为得到最小谱宽、最小发散角、最大功率密度输出,必须将外腔镜倾斜β=λ/2d(λ为工作波长,d为列阵周期),这使得仅有基超模光能成像于发光单元内而被允许振荡。应用此

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根据波导模理论,推导了高功率激光二极管阵列的远场分布,根据其分布特点,设计了一种离轴外腔.运用这种外腔,在工作电流为17A时,光束的束宽积从自由运转时的1100mm.mrad减小到128mm.mrad,二极管阵列的光束质量提高了8.5倍左右,输出功率约为自由运转时的75%.

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将千赫兹高功率全固态Nd:YAG激光器的增益介质当作厚透镜处理,使用矩阵的方法对等效热透镜腔进行分析。采用多条半导体激光列阵侧向紧凑抽运结构设计,提高了增益介质光抽运的均匀性。根据实际抽运功率,通过模拟计算,设计了平凸非稳腔。选择的凸面全反镜的最佳曲率半径有效地补偿了增益介质热透镜效应,激光器实现了动态稳腔运转,激光脉冲能量输出斜度效率大于13%,光束发散角优于1.3mrad。

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实验研究了高重复率、大功率半导体激光二极管阵列(LDA)侧面环绕抽运的Nd:YAG激光放大器的放大特性、热焦距变化和热致双折射效应引起的退偏特性。偏振光绎千赫兹高功率单通激光放大器,获得约3倍的光脉冲能量放大,脉冲宽度基本保持不变,其输出的P分量与S分量的能量比趋于常数3:1,实验测得的能量放大倍率及放大光束的椭圆偏振度与理论预期吻合很好。