Yb:YAG/YAG复合陶瓷薄片连续和调Q输出特性

采用面泵浦的CAMIL结构，我们研究了970 nm泵浦的Yb:YAG/YAG复合陶瓷薄片激光器，获得了连续和调Q的激光输出。在连续运转情况下，获得了最高1.05 W的激光输出，中心波长为1031 nm，后腔输出镜透射率为2％。我们同时获得了声光调Q的脉冲输出，重复频率从1 kHz到30 kHz，脉宽分别从166 ns到700 ns。

激光二极管端面抽运Nd∶YVO_4板条激光器及其热效应

激光器中激光介质采用板条状几何结构可以极大地降低它的热效应,但仍然需要进一步分析其影响,进而优化激光器效率。利用有限元分析方法分析了部分端面抽运的混合腔板条激光器中激光介质的热效应,计算的热透镜焦距与实测结果基本相符。分析了热效应对模式匹配的影响,分析结果对于优化激光器效率、改进谐振腔设计具有一定的参考价值。并在分析的基础上进行了混合腔实验,抽运功率为110 W时,获得连续输出激光功率41.5 W,光-光转换效率约38%,斜效率达58.8%,M2因子为非稳腔方向M2x=1.59,稳定腔方向M2y=1.55。

Effect of Fe impurity on the optical loss of Nd-doped phosphate laser glass

The optical loss coefficient at 1053-nm wavelength, influenced by Fe ions in N31-type Nd-doped phosphate laser glass, was determined precisely and analyzed in detail. It is found that the optical loss coefficient per unit of Fe concentration (cm^(-1)/ppmw) increases with Fe concentration in the range of 0---300 ppmw, but it approaches a constant as the Fe concentration is larger than 300 ppmw. Such a concentration effect is due to a shift in the redox equilibrium between Fe3+ and Fe2+ ions in the glass. The effect of oxygen pressure, temperature, and variable valence states of other metal ions in glass samples on the optical loss is also discussed.

Fluorescence properties and laser demonstrations of Nd-doped high silica glasses prepared by sintering nanoporous glass

Porous glass with high-SiO2 content was impregnated with Nd ions, and subsequently sintered at 1100 degrees C into a compact non-porous glass in air or reducing atmosphere. Sintering in a reducing atmosphere produced an intense violet-blue fluorescence at 394 nm. However, the sintering atmospheres almost did not affect the fluorescence properties in the infrared range. A good performance Nd3+-doped silica microchip laser operating at 1064 nm was demonstrated. The Nd-doped sintering glasses with high-SiO2 content are potential host materials for high power solid-state lasers and new transparent fluorescence materials. (c) 2007 Elsevier B.V. All rights reserved.

室温下连续波运行Tm:YAP泵浦的Ho:YAG激光器

我们报道了一种以二极管泵浦的 1.94 μm Tm:YAP激光器为泵浦源，常温下在2.1 μm连续运行的Ho:YAG激光器。最大输出功率1.5 W，相应斜率效率为17.9%，二极管到的转换效率为5.6%。

Growth of excellent-quality Nd : LuVO4 single crystal and laser properties

High-quality Nd:LuVO4 single crystal was successfully grown by Czochralski method. The assessment of the crystalline quality by the chemical etching method and Conoscope image was reported. The absorption spectra from 300 to 1000 nm and emission spectra from 960 to 1450 nm of Nd: LuVO4 were measured. Laser performance was achieved with Nd:LUVO4 crystal for the transition of F-4(3/2) -> I-4(11/2) (corresponding wavelength 1065.8 nm) in an actively Q-switched operation, and the average output power reached 5.42 W at a pulse repetition frequency (PRF) of 40 kHz under pump power of 18 W, giving an optical conversion efficiency of 30.1%. The pulse energy and peak power reached 138 mu J and 16.2 kW at PRF of 25 kHz under pump power of 14.2 W, and the pulse duration was 8.5 ns. (c) 2005 Elsevier B.V. All rights reserved.

Nd：（La，Sr）（Al，Ta）O3晶体的生长及光谱性能的研究

应用中频感应提拉法生长了新型的Nd：（La，Sr）（Al，Ta）O3（Nd^3＋：LSAT）晶体。运用电感耦合等离子体原子发射光谱仪（ICPAES）测定Nd^3＋离子在Nd^3＋：LSAT晶体中的分凝系数为0．587。X射线粉末衍射（XRPD）测试结果表明Nd^3＋：LSAT晶体与LSAT晶体同构。研究了不同退火条件对晶体光谱性能的影响。分析了Nd^3＋：LSAT晶体的光谱性能，Nd^3＋：LSAT晶体的荧光寿命为290μs。比较了Nd^3＋：LSAT和Nd^3＋：YAG，Nd^3＋：YVO3等晶体的光谱

Ti:sapphire laser pumped high average power laser crystal Nd:GGG with high efficiency output

High-quality neodymium doped GGG laser crystals have been grown by Czochralski (Cz) method. Results of Nd:GGG thin chip laser operating at 1.064 μm pumped by Ti:sapphire laser operating at 808 nm were reported. The slop efficiency was as high as 20%.

Yb:YAP与Yb:YAG晶体光谱性能比较

应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体，对比了室温下两种晶体的吸收和发射光谱特性。结果表明，Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值；同时对比发现，Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍，它容易实现LD泵；由于Yb:YAP晶体的各向异性，它有轴向效应明显，它可以产生偏振激光。

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.

Passively mode-locked YVO4/Nd : YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector

A passively mode-locked diode end-pumped YVO4/Nd:YVO4 composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and continuous-wave mode locking operation were realized experimentally. A stable averaged output power of 10.15 W with pulse width of about 11.2-ps at a repetition rate of 113 MHz was obtained, and the optical-to-optical efficiency of 43% was achieved.

Experimental study on a diode-pumped passively mode-locking Nd : GdVO4/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.

Diode-pumped self-starting mode-locked Nd : YVO4 laser with semiconductor saturable absorber output coupler

By using a semiconductor saturable-absorber output coupler as a mode-locking device, we experimentally realized the operation of a diode-pumped passively mode-locked Nd:YVO4 laser. Stable laser pulses with duration of 2.3 ps were generated at the output power of about 1 W. With increasing the pump power to 9 W, the maximum mode-locked power of 1.7 W was obtained, which corresponds to a slope conversion efficiency of 44% and optical-to-optical conversion efficiency of 19%.