Recombinant protein of heptad-repeat HR212, a stable fusion inhibitor with potent anti-HIV action in vitro

HR212, a recombinant protein expressed in Escherichia coli, has been previously reported to inhibit HIV-1 membrane fusion at low nanomolar level. Here we report that HR212 is effective in blocking laboratory strain HIV-1IIIB entry and replication with EC50 values of 3.92±0.62 and 6.59±1.74 nM, respectively, and inhibiting infection by clinic isolate HIV-1KM018 with EC50 values of 44.44±10.20 nM, as well as suppressing HIV-1- induced cytopathic effect with an EC50 value of 3.04±1.20 nM. It also inhibited HIV-2ROD and HIV-2CBL-20 entry and replication in the μM range. Notably, HR212 was highly effective against T20-resistant strains with EC50 values ranging from 5.09 to 7.75 nM. Unlike T20, HR212 showed stability sufficient to inhibit syncytia formation in a time-of-addition assay, and was insensitive to proteinase K digestion. These results suggest that HR212 has great potential to be further developed as novel HIV-1 fusion inhibitor for treatment of HIV/ AIDS patients, particularly for those infected by T20-resistant variants.

Note: A time-resolved Kerr rotation system with a rotatable in-plane magnetic field

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05T05:05:17Z No. of bitstreams: 1 Note：A time-resolved Kerr rotation system with a rotatable in-plane magnetic field.pdf: 620425 bytes, checksum: 354584f39f341db1d35ee96d2b0fe14e (MD5)

Calculation of Valence Subband Structures for Strained Quantum-Wells by Plane Wave Expansion Method Within 6 * 6 Luttinger-Kohn Model

The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6 * 6 Luttinger-Kohn model. The effect of the number and period of plane-waves used for expansion on the stability of energy eigenvalues is examined. For practical calculation, it should choose the period large sufficiently to ensure the envelope functions vanish at the boundary and the number of plane waves large enough to ensure the energy eigenvalues keep unchanged within a prescribed range.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.

Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching

A diffractive microlens with a cascade focal plane along the main optical axis of the device is fabricated using a low-cost technique mainly including single mask ultraviolet (UV) photolithography and dual-step KOH:H2O etching. Based on the evolutionary behavior of converse pyramid-shaped microholes (CPSMs) preshaped over a {100}-oriented silicon wafer in KOH etchant, the first-step KOH etching is performed to transfer initial square micro-openings in a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD) and patterned by single mask UV-photolithography, into CPSMs with needed dimension. After completely removing a thinned SiO2 mask, basic annular phase steps with a relatively steep sidewall and scheduled height can be shaped in the overlapped etching region between the neighboring silicon concave-arc microstructures evolved from CPSMs through the second-step KOH etching. Morphological measurements demonstrate a desirable surface of the silicon microlens with a roughness in nanometer scale and the feature height of the phase steps formed in the submicrometer range. Conventional optics measurements of the plastic diffractive microlens obtained by further hot embossing the fine microrelief phase map over the nickel mask made through a common electrochemical method indicate a highly efficient cascaded focusing performance.

In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate

Based upon a hybrid ferromagnet/semiconductor structure consisting of two-dimensional electron gas and a pair of surface ferromagnetic stripes on top, we have theoretically investigated the effect of in-plane stray field omitted frequently in previous studies on the spin-dependent ballistic transport properties in hybrid structure. It is demonstrated here that, in combination with an external-controllable electrostatic modulation, the concerned structure shows a similar function as a lateral spin-polarized resonant tunneling device, where the strong spin-filtering effect occurs and nearly single-mode polarization is anticipated for the proper modulation. More importantly, the spin polarity of transmission electron can be easily transferred from one extreme to the other by switching the magnetization of stripes, showing the promising application as an efficient spin aligner in the developing semiconductor spintronics.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

Anti-HER-2-SEC2融合免疫毒素的构建和活性研究

以PCR技术从金黄色葡萄球菌基因组DNA中首次克隆编码成熟SECZ蛋白的全基因sec2。该基因共717bp，编码239个氨基酸，Genbank Accession number：AY450554。构建了SEC2的表达载体pET-28a-sec2，并在大肠杆菌BL21（DE3）中高效表达可溶性rSEC2蛋白。经亲和层析纯化，其纯度在95％以上，平均回收量为每升培养物40mg。纯化的rSEcZ保持了与野生型相当的生物学活性。以限制性核酸内切酶连接技术分别将两个抗人表皮生长因子受体HER-2单链抗体基因通过DNA Linker与sec2融合，构建融合基因b-l-sec2和ml小sec2，并以两种方式表达纯化。以pET-32a表达载体在E，coliAD494（DE3）中以氨基端融合大肠杆菌硫氧还蛋白（TrxA）形式高效表达融合蛋白TRX-B-L-SEC2和TRX-ML-L-SEC2，经亲和层析纯化，并以肠激酶切割得到成熟融合免疫毒素B-L-SEC2和ML-L-SEC2，其纯度在95％以上，平均回收量为每升培养物smg；以构建的新型表达载体pASK-75-EX在E.coliBL21（ED3）中以不溶性包涵体形式表达融合免疫毒素蛋白，经变性、纯化和复性后得到具有生物学活性的融合免疫毒素，其纯度在95％以上，平均回收量为每升培养物30mg。以两种方式制备的融合免疫毒素都保持了SECZ蛋白的免疫原性，都能有效刺激人外周血单个核细胞的增殖，并且都显示出在体外与HER-2过表达的乳腺癌细胞SK-Br-3特异性结合能力，具有显著的靶向性抑瘤作用。用PcR方法扩增了编码TrxA蛋白的基因trxA并克隆至表达载体pET-28a启动子上游，构建了一种在单质粒中利用两个相同的启动子游离共表达硫氧还蛋白与目的蛋白的表达载体。利用该载体可使TrxA与外源蛋白在大肠杆菌BL21（DE3）中以非融合形式高效共表达。共表达的TrxA可明显促进外源蛋白单链抗体ML3.9（scFv-ML）、3一轻基苯甲酸-6-单加氧酶（3HBA）的可溶性表达；并明显减少肠毒素C2（SEC2）、结核杆菌螺旋酶A亚基（GYRA）的包涵体表达。