Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Esterification of acetic acid with N-butanol over the catalysts of surface hydrophobicity and lipophobicity

A series of silica-supported silicotungstic acid catalysts (H4SiW12O40, abbreviated as HSiW), modified with various loadings of Teflon (HSiW/SiO2-Teflon), were prepared by impregnation method. The surface properties of the catalysts were studied by means of XRD, BET, NH3-TPD and the Drop Shape Analyzer (DSA) measurements. Both the surface hydrophobicity and the surface lipophobicity of HSiW/SiO2-Teflon catalysts are enhanced by means of the addition of Teflon.

Hydrogenation of phenol in scCO(2) over carbon nanofiber supported Rh catalyst

A catalyst of Rh nanoparticles supported on a carbon nanofiber, 5 wt.% Rh/CNF, with an average size of 2-3 nm has been prepared by a method of incipient wetness impregnation. The catalyst presented a high activity in the ring hydrogenation of phenol in a medium of supercritical CO2 (scCO(2)) at a low temperature of 323 K. The presence of compressed CO2 retards hydrogenation of cyclohexanone to cyclohexanol under the reaction conditions used, and this is beneficial for the formation of cyclohexanone, increasing the selectivity to cyclohexanone.

In situ preparation of Ir/ZSM-5/cordierite honeycombs and their application for NOx abatement

ZSM-5 zeolites were synthesized in situ onto cordierite honeycombs by vapor phase transport (VPT) for the first time. The as-synthesized ZSM-5/cordierite honeycombs were impregnated with IrCl3 and tested for NOx reduction with a simulated exhaust gas as the reducing agent. Under the conditions of excess oxygen, the Ir/ZSM-S/cordierite monolith catalyst exhibited NO reduction of 73% at a temperature of 573 K and a space velocity of 20,000 h(-1).

Catalytic reduction of NO over in situ synthesized Ir/ZSM-5 monoliths

The catalytic performance of Ir-based catalysts was investigated for the reduction of NO under lean-burn conditions over binderless Ir/ZSM-5 monoliths, which were prepared by a vapor phase transport (VPT) technique. The catalytic activity was found to be dependent not only on the Ir content, but also on the ZSM-5 loading of the monolith. With the decreasing of the Ir content or the increasing of the ZSM-5 loading of the monolith, NO conversion increased. When the ZSM-5 loading on the cordierite monolith was raised up to ca. 11% and the metal Ir content was about 5 g/l, the NO conversion reached its maximum value of 73% at 533 K and SV of 20 000 h(-1). Furthermore, both the presence of 10% water vapor in the feed gas and the variation of space velocity of the reaction gases have little effect on the NO conversion. A comparative test between Ir/ZSM-5 and Cu/ZSM-5, as well as the variation of the feed gas compositions, revealed that Ir/ZSM-5 is very active for the reduction of NO by CO under lean conditions, although it is a poor catalyst for the C3H8-SCR process. This unique property of Ir/ZSM-5 makes it superior to the traditional three-way catalyst (TWC) for NO reduction under lean conditions. (C) 2001 Elsevier Science B.V. All rights reserved.

Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition

Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038 +/- 0.0009 Angstrom, which is in excellent agreement with the theoretical prediction of 4.503 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07918-4].

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.

Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors

The GaNAs alloys have been grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHv) as the nitrogen precursor, triethylgallium (TEGa) and trimethylgallium (TMGa) as the gallium precursors, respectively. Both symmetric (004) and asymmetric (1 1 5) high-resolution X-ray diffraction (HRXRD) were used to determine the nitrogen content in GaNAs layers. Secondary ion mass spectrometry (SIMS) was used to obtain the impurity content. T e influence of different Ga precursors on GaNAs quality has been investigated. Phase separation is observed in the < 1 1 5 > direction when using TMGa as the Ga precursor but not observed when using TEGa. This phenomenon should originate from the parasitic reaction between the Ga and N precursors. Furthermore. samples grown with TEGa have better quality and less impurity contamination than those with TMGa. Nitrogen content of 5.742% has been achieved using TEGa and no phase separation observed in the sample. (C) 2002 Elsevier Science B.V. All rights reserved.