Mercury selective electrochemical sensor based on a double armed crown ether as ionophore

PVC based membranes of a double armed crown ether, N, N'-dibenzyl, 1,4,10,13-tetraoxa-7, 16-diaza cyclooctadecane (I) as ionophore with sodium tetra phenyl borate (NaTPB) as anion excluder and with many plasticizing solvent mediators have been prepared and used for Hg(II) ion determination. The membrane with DBBP (dibutyl butyl phosphonate ) as plasticizer with various ingredients in the ratio PVC: I: NaTPB: DBBP (150: 12: 2: 100) shows the best results in terms of working concentration range (3.1x10-5-1.0x10-tM) with a Nernstian slope (29.0′0.5 mV/decade of activity). The electrode works in the pH range 2.1-4.5. The response time of the sensor is 15s and it can be used for about 4 months in aqueous as well as in non-aqueous medium. It has good stability and reproducibility. The potentiometric selectivity coefficient values for mono-, di-, and trivalent cations are tabulated. The sensor is highly selective for Hg2+ in the presence of normal interferents like cadmium, silver, sodium and iron.

Guest inducing p-sulfonatocalix[4] arene into three-dimensional capsule architecture and a mixed A-B double layer framework

The reactions of sodium p-sulfonatocalix[4]arene (Na5L) and terbium/europium(III) chloride in the presence of pyrazine-N,N'-dioxide (PNNO) in aqueous solutions gave the crystalline complexes 1 and 2. Both structures contain molecular capsules of p-sulfonatocalix[4] arene with PNNO as guest molecules in the cavity of the calix[4]arenes. The molecular capsules are connected through sodium and terbium (or europium) centers forming a three-dimensional framework.

Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base

In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage.

Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films

Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively.

Interweaving of single-helical and equal double-helical chains with the same helical axis in a 3D metal-organic framework

A novel metal-organic framework with unprecedented interweaving of coaxial single-helical and equal double-helical chains of opposite chirality, which features a super-connective helix simultaneously tangling with eight helices, was reported.

1,2,3,4-Alternate double cone conformational extreme in the supramolecular assemblies of p-sulfonatocalix[8]arene

Two supramolecular assemblies of p-sulfonato-calix[8]arene were stacked by some infinite 1D 'molecular capsule' chains in which the calixarenes adopt an unprecedented 1,2,3,4-alternate double cone conformation.

Double-ceramic-layer thermal barrier coatings of La2Zr2O7/YSZ deposited by electron beam-physical vapor deposition

Double-ceramic-layer(DCL) thermal barrier coatings (TBCs) of La2Zr2O7 (LZ) and yttria stabilized zirconia (YSZ) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphologies and cyclic oxidation behavior of the DCL coating were studied. Both the X-ray diffraction (XRD) and thermogravimetric-differential thermal analysis (TG-DTA) prove that LZ and YSZ have good chemical applicability to form a DCL coating. The thermal cycling test at 1373 K in an air furnace indicates the DCL coating has a much longer lifetime than the single layer LZ coating. and even longer than that of the single layer YSZ coating. The failure of the DCL coating is a result of both the bond coat oxidation and the thermal strain between bond coat and ceramic layer generated by the thermal expansion mismatch.

Syntheses and Crystal Structures of Fused Thiophenes: [7]Helicene and Double Helicene, a D-2-Symmetric Dimer of 3,3 '-Bis(dithieno[2,3-b:3 ',2 '-d]thiophene)

The efficient synthesis of (TMS)(2)-[7]helicene (rac-3) and double helicene, a D-2-symmetric dimer of 3,3'-bis(dithieno-[2,3-b:3',2'-d]thiophene) (rac-4) was developed. The crystal structures of 3 and 4 show both strong intermolecular pi-pi interactions and S center dot center dot center dot S interactions. UV/vis spectra reveal that both 3 and 4 show significant pi-electron delocalization.

Surface modification of poly(dimethylsiloxane) microchips using a double-chained cationic surfactant for efficiently resolving fluorescent dye adsorption

This paper described a double-chained cationic surfactant, didodecyldimethylammonium bromide (DDAB). for dynamic surface modification of poly(dimethylsiloxane) (PDMS) microchips to reduce the fluorescent dyes adsorption onto the microchannel. When DDAB with a high concentration was present as the dynamic modification reagent in the running and sample buffer, it not only reversed the direction of electroosmotic flow, but also efficiently suppressed fluorescent dyes pyronine Y (PY) or rhodamine 8 (RB) adsorption onto the chip surface. In addition, vesicles formed by DDAB in the buffer with higher surface charge density and electrophoretic mobility could provide wider migration window and potential for the separation of compounds with similar hydrophobicity. Factors affecting modification, such as pH and concentrations of the buffer, DDAB concentration in the buffer were investigated. Compared with commonly used single-chained cetyltrimethylammonium bromide, DDAB provided a better modification performance.

Double-template synthesis of platinum nanomaterials for oxygen reduction

Gas bubble dynamic template, a new green and promising template, can be used to prepare nanostructured materials with different shapes from electrochemical deposition processes. Different morphological platinum nanomaterials have been synthesized by the replacement reaction of the deposited copper nanomaterials which were obtained under negative potential along with H-2 evolution (dynamic template) at a glassy carbon electrode. Scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and electrochemical methods were adopted to characterize their structures and properties. The nanomaterials platinum exhibited excellent catalytic activity toward oxygen reduction. The results demonstrated that the strategy is a simple, cost-effective, and potent method to prepare platinum nanomaterials.

Efficient synthesis of substituted tetrahydrothiopyrano[2,3-b]thiopyran-4,5-diones by a double annulation strategy from dialkenoylketene dithioacetals

An efficient synthetic procedure for substituted 2,3,6,7tetrahydrothiopyrano [2,3-b] thiopyran-4,5 -diones by a double annulation strategy is described. The ring systems are made in good yields from readily available dialkenoylketene dithioacetals in the presence of either sodium sulfide nonahydrate/N,N-dimethylformamide (DMF) or a sodium hydride/DMF/amine system.

Organic thin-film transistors having inorganic/organic double gate insulators

Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (kappa) as the first gate insulator and octadecyltrichlorosilane (OTS) with low kappa as the second gate insulator. The devices have carrier mobilities larger than 10(-2) cm(2)/V s, on/off current ratio greater than 10(5), and the threshold voltage of -14 V, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the OTFTs with a Ta2O5 gate insulator. The leakage current was decreased from 2.4x10(-6) to 7.4x10(-8) A due to the introduction of the OTS second dielectric layer. The results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics.