267 resultados para Zp-Extensions


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Polycrystalline nanotubular Bi2Te3 could be prepared via a high-temperature solution process using nanoscale tellurium, decomposed from trioctylphosphine oxide (TOPO) extracted tellurium species (Te-TOPO), as sacrificial template. The formation of such tubular structure is believed to be the result of outward diffusion of Te during the alloying process. The electrical properties (Seebeck coefficient and electrical conductivity) of the polycrystalline nanotubular Bi2Te3 have been studied and the experimental results show that the electrical conductivity is approximately three orders of magnitude smaller than bulk bismuth telluride materials mainly due to the much larger resistance brought by the insufficient contact between the nanotubular structures.

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Well-faceted hexagonal ZnO microprisms with regular interior space have been successfully prepared by a template-free hydrothermal synthetic route. The morphologies of the products depend on the experimental conditions such as the solvent, the concentration of ammonia aqueous solution, and the reaction temperature. Through manipulation of the aging time, the as-prepared ZnO can be controlled as a monodispersed hexagonal twinning solid or as hollow microprisms. Moreover, the evolution process of the hollow ZnO nanoarchitecture after reaction for 2, 6, 12, and 24 h has been investigated by field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). A possible growth mechanism has also been proposed and discussed. Furthermore, the photoluminescence (PL) measurement exhibits the unique emitting characteristic of hollow ZnO nanostructures.

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The photoluminescence (PL) and electroluminescence (EL) properties of a samarium complex Sm(TTA)(3)phen (TTA = 2-thenoyltri-fluoroacetonate, phen = 1, 10-phenanthroline) were investigated. The results show that Sm(TTA)3phen could be used as promising luminescent and electron transporting material in the electroluminescent devices. The difference between PL and EL spectra was noticed and discussed. Besides, it is noteworthy that the choice of the hole transporting layer (HTL) showed significant effect on the device performance, which was explained by the low-lying highest occupied molecular orbit (HOMO) level of Sm(TTA)3phen and the different hole injection barrier at the HTL/EML (emitting material layer) interface.

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We have fabricated and measured a series of electroluminescent devices with the structure of ITO/TPD/Eu(TTA)(3)phen (x):CBP/BCP/ ALQ/LiF/Al, where x is the weight percentage of Eu(TTA)3phen (from 0% to 6%). At very low current density, carrier trapping is the dominant luminescent mechanism and the 4% doped device shows the highest electroluminescence (EL) efficiency among all these devices. With increasing current density, Forster energy transfer participates in EL process. At the current density of 10.0 and 80.0mA/ cm(2), 2% and 3% doped devices show the highest EL efficiency, respectively. From analysis of the EL spectra and the EL efficiency-current density characteristics, we found that the EL efficiency is manipulated by Forster energy transfer efficiency at high current density. So we suggest that the dominant luminescent mechanism changes gradually from carrier trapping to Forster energy transfer with increasing current density. Moreover, the conversion of dominant EL mechanism was suspected to be partly responsible for the EL efficiency roll-off because of the lower EL quantum efficiency of Forster energy transfer compared with carrier trapping.

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A new dysprosium complex Dy(PM)(3)(TP)(2) [where PM = 1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone and TP = triphenyl phosphine oxide] was synthesized, and its single-crystal structure was also studied. Its photophysical properties were studied by absorption spectra, emission spectra, fluorescence quantum efficiency, and decay time of the f-f transition of the Dy3+ ion. In addition, the antenna effect was introduced to discuss the energy transfer mechanism between the ligand and the central Dy3+ ion. Finally, a series of devices with various structures was fabricated to investigate the electroluminescence (EL) performances of Dy(PM)(3)(TP)(2). The best device with the structure ITO/CuPc 15 nm/Dy complex 70 nm/BCP 20 nm/AlQ 30 nm/LiF 1 nm/Al 100 nm exhibits a maximum brightness of 524 cd/m(2), a current efficiency of 0.73 cd/A, and a power efficiency of 0.16 lm/W, which means that a great improvement in the performances of the device was obtained as compared to the results reported in published literature. Being identical to the PL spectrum, the EL spectrum of the complex also shows characteristic emissions of the Dy3+ ion, which consist of a yellow band at 572 nm and a blue emission band at 480 nm corresponding to the F-4(9/2)-H-6(13/2) and F-4(9/2)-H-6(15/2) transition of the Dy3+ ion, respectively. Consequently, an appropriate tuning of the blue/yellow intensity ratio can be presumed to accomplish a white luminescent emission.

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Several organic electroluminescent devices with different device structures were fabricated based on an organosamarium complex Sm(HFNH)(3)phen[HFNH=4, 4, 5, 5, 6, 6, 6-heptafluoro-l-(2-naphthvl)hexane-1, 3-dione; phen=1, 10-phenanthroline] as emitter. Their electroluminescent properties were investigated in detail. Although the devices with the optimal structure ITO/TPD (50nm)/ Sm(HFNH)(3)phen (xwt%):CBP (50nm)/BCP (20nm)/AIQ (30nm)/LiF (1 nm),/Al (200nm) show high brightness (more than 400cd/m(2)) and high current efficiency (about 1 cd/A), there are emissions from CBP, BCP and even from AIQ existing in the electroluminescence (EL) spectra besides emission from Sm(HFNH)(3)Phen. The reason to this was discussed. The device with the structure ITO/TPD (50 nm)/ Sm(HFNH)(3)phen (50 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 118 cd/m(2) and current efficiency of 0.029 cd/A, and shows emissions from AIQ and Sm(HFNH)(3)phen at high voltages. However, with the BCP hole-block layer added, the device [ITO/TPD (50 nm)/Sm(HFNH)(3)phen (50 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm)] exhibits pure Sm3+ emission in 2 the EL spectra even at high voltages, with the maximum current efficiency of 0.29cd/A and brightness of 82cd/m(2)

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A series of cerium dioxide (CeO2,)/polyimide (PI) nanocomposites were successfully prepared from Ce(Phen)(3) and polyamic acid (PAA) via the solution direct-dispersing method, followed by a step thermal imidization process. TGA and XPS studies showed that the cerium complex decomposed to form CeO2, during the thermal imidization process at 300 degrees C. SEM observation showed that the formed CeO2, as nalloparticles was well dispersed in polyimide matrix with a size of about 50-100 nm for samples with different contents of CeO2. Thermal analysis indicated that the introduction of CeO2, decreased the thermal stability of nanocomposite films due to the decomposition of Ce(Phen)(3) in the imidization process, while the glass transition temperature (T-g) increased obviously. especially nanocomposite films with high loading of CeO2 exhibited a trend of disappearance off, DMTA and static tensile measurements showed that the storage modulus of nanocomposite films increased, while the elongation at break decreased with increasing CeO2 content.

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A one-pot synthesis method for the preparation of polyimides containing biphenyl units was developed via nickel-catalyzed coupling reaction of bis(chlorophthalimide)s which were prepared from chloroplithalic anhydrides and diamines in xylene. The resulting polyimides had inherent viscosities of above 0.60dL g(-1). In the meantime, the copolymerizations from a mixture of three isomeric bis(chlorophthalimide)s gave the polymers with inherent viscosities of 0.36-0.55 gdL(-1). The solubility and film formability of the copolymers were better than those of homopolymers from bis(4-chlorophthalimide). The 10% weight loss of these polyimides was between 470 and 531 degrees C.

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In this paper, we presented a novel covalent bonding process between two quartz wafers at 300 degrees C. High-quality wafer bonding was formed by the hydroxylization, aminosilylation and atom transfer radical polymerization (ATRP) of glycidyl methacrylate (GMA), respectively, on quartz wafer surfaces, followed by close contact of the GMA functional wafer and the aminosilylation wafer, the epoxy group opening ring reaction was catalyzed by the amino and solidified to form the covalent bonding of the quartz wafers. The shear force between two wafers in all bonding samples was higher than 1.5 MPa. Microfluidic chips bonded by the above procedures had high transparency and the present procedure avoided the adhesive to block or flow into the channel.

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A new europium (III) complex Eu(HFNH)(3)Phen (HFNH: 4, 4, 5, 5, 6, 6, 6-heptafluoro-1-(2-naphthyl) hexane-1,3-dione; phen: 1, 10-phenanthroline) was synthesized and its triboltuninescent phenomenon was observed. Photoluminescence and triboluminescence spectra were successfully determined. The most intense triboluminescent emission originates front the transition of the, central Eu3+ ion from D-5(0) level to F-7(2) level. The triboluminescent spectrum is basically similar to that of photoluminescence, which correlates with the disorders of F atoms.

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A series of novel ternary polyimide/SiO2/polydiphenylsiloxane (PI/SiO2/PDPhS) composite films were prepared through co-hydrolysis and condensation between tetramethoxysilane, diphenyldimethoxysilane (DDS) and aminopropyltriethoxysilane-terminated polyamic acid, using an in situ sol-gel method. The composite films exhibited good optical transparency up to 30 wt% of total content of DDS and SiO2. SEM analysis showed that the PDPhS and SiO2 were well dispersed in the PI matrix without macroscopic separation of the composite films. TGA analysis indicated that the introduction of SiO2 could improve the thermal stability of the composite films. Dynamic mechanical thermal analysis showed that the composite films with low DDS content (5 wt%) had a higher glass transition temperature (T-g) than pure PI matrix. When the content of DDS was above 10 wt%, the T-g of the composite decreased slightly due to the plasticizing effect of flexible PDPhS linkages on the rigid PI chains. The composite films with high SiO2 content exhibited higher values of storage modulus. Tensile measurements also showed that the modulus and tensile strength of the composite films increased with increasing SiO2 content, and the composite films still retained a high elongation at break due the introduction of DDS.

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Polyetherimides and copolymers have been synthesized in one pot from bis(chlorophthalimide), dichlorodiphenylsulfone, and bisphenolate using diphenylsulfone as the solvent. The inherent viscosities of the obtained polyimides are in the range of 0.32-0.72 dL/g, and the structures of polyimides were confirmed by IR and elemental analyses. All of the polyimides have good solubility in common organic solvents. The 5% weight-loss temperatures of the polyimides were 429-507 C in air. The glass transition temperatures (T3) of 4,4'-(9-fluorenylidene) diphenol-based polyimides are in the range of 253-268 degrees C. The Tg of bisphenol A-based polyimides is in the range of 198204 degrees C, while the T-g change inconspicuously when the ratios of diphenylsulfone increase. The wide-angle X-ray diffraction showed that all polyimides prepared are amorphous.

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The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indium-tin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.