Experimental measurement of polyethylene chain modulus by scanning force microscopy

Nanoindentation technique and scanning force microscopy have been used to measure directly the polyethylene modulus along the chain axis. Single crystals of polyethylene were employed in order to obtain well-aligned chain segments. To minimize effects of scanner creep, a Z scan rate of 3 Hz was employed. The "X Rotate" value of 25 degrees was selected to eliminate effects of lateral tip motion. The results were analyzed by the Oliver -Pharr method for which direct observation and measurement of the contact area are not required. Considering the influence of tip roundness on the projected contact area, the nanoindentation results were analyzed by the Sawa method. The chain modulus obtained from the thinner polyethylene single crystal sample was 204 +/- 21 GPa by the Oliver-Pharr method and 168 +/- 17 GPa by the Sawa method. The lower values than expected were due to substrate effects and anisotropy of chain deformation during nanoindentation. An extrapolation of the chain modulus obtained by various strains to zero nanoindentation eliminated the effect of substrate and anisotropy of chain deformation. The corresponding chain modulus obtained from the thicker sample was 278 GPa by the Oliver-Pharr method and 267 GPa by the Sawa method, respectively, in better agreement with the value of 340 Cpa determined theoretically. (C) 2001 Elsevier Science Ltd. All rights reserved.

Syntheses and properties of thermotropic copolyesters of p-hydroxybenzoic acid

Two series of thermotropic copolyesters of p-hydroxybenzoic acid (HBA) were synthesized by direct thermal polycondensation. One comprised aromatic copolyesters from HBA, terephthalic acid, bis(4-hydroxyphenyl) ketone (BHP) and resorcinol. The other comprised semi-aromatic copolyesters from HBA, terephthalic acid, BHP and alpha,-diols with carbon atom number of 4, 6, 8, 10. The properties of the two series were characterized by polarized light microscopy, differential scanning calorimetry and wide angle X-ray diffraction. Most of the resulting copolyesters could form a nematic phase over a wide temperature range above their melting points. The effects of Variation in composition and monomer structure on the properties of copolyesters were discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.

Crystal growth and TG-DTA properties of K(2)Ln(NO3)(5).2H(2)O (Ln = La, Ce, Pr, Nd, Sm)

Single crystals of KLnN(Ln=La, Ce, Pr, Nd, Sm) can be grown in water solution with pH approximate to 1 similar to 2 at about 40 degrees C. Crystals of KLnN (Ln=La, Ce, Pr, Nd) are orthorhombic with space group Fdd2. KPrN crystal was grwon and its crystal structure was determined for the first time. The KPrN crystal parameters obtained by the direct method are as follows: a=21.411(3) Angstrom, b=11.2210(10)Angstrom, c=12.208(2) Angstrom, Z=6, R=0.0240. The TG-DTA curves of KLnN(Ln=La,Ce, Pr, Nd, Sm) demonstrate that the processes of dehydration, melt, irreversible phase transition and decomposition of NO3- take place in sequence with the temperature increasing(except KCN). There are three steps in the decomposition of NO3- in KLnN(Ln=La, Nd, Sm) while two steps in KLnN (Ln=Ce, Pr). K(2)Ln(NO3)(5). 2H(2)O are formed at about 225 degrees C by the reaction of the starting materials of KNO3 and Ln(NO3)(3). nH(2)O.

A new crystal modification of gutta percha

Single chain and pauci chain single crystals of gutta percha in nanometer size were prepared by a dilute solution spraying method. A new crystal modification of gutta percha was found. The unit cell of the new modification of gutta percha was determined by electron diffraction crystal structure analysis to be a hexagonal form with cell dimensions: a = b = 0.695 nm, c = 0.661 nm, alpha = beta = 90 degrees, gamma =120 degrees; the space group is P6. The molecular packing in the unit cell was determined by computer modelling with Cerius(2) 2.0 software. (C) 1998 Elsevier Science Ltd. All rights reserved.

Morphology and structure of poly(aryl ether ketone ketone) containing isophthaloyl moieties crystallized from dilute solution

Spherulites and lamellar single crystals of poly(aryl ether ketone ketone) containing isophthaloyl moieties (PEKK(I)) were obtained from dilute alpha-chloronaphthalene solution. The morphology and structure of the spherulites and single crystals were studied by electron microscopy and electron diffraction. The spherulites were found to consist of elongated lamellar branches that grow with the b crystallographic axis in the radial direction. Single crystals possess a similar habit, with b parallel to the long axis, a transverse, and c perpendicular to the lamellae plane. High-resolution images of the PEKK(I) crystals which show the perfection of and defects in the crystals, were obtained, and many defects or dislocations a,ere observed. (C) 1997 Elsevier Science Ltd.

Crystallization process and morphology structure of poly(aryl ether ether ketone ketone) containing meta-phenyl links

The crystallization process and morphology of poly(aryl ether ether ketone ketone) containing meta-phenyl links (PEEKmK) have been investigated by transmission electron microscopy and electron diffraction. The results indicate that the thin films of PEEKmK isothermally crystallized from both the glassy state and the melt at the temperature range of 180 similar to 250 degrees C consist of two kinds of morphological forms, i. e. large (order of mu m), flat-on single crystals and narrow, lath-like, edge-on lamellae, The latter consists of the spherulites. Meanwhile, the growing process of the two kinds of morphological forms has been discussed.

OPTICAL AND STRUCTURAL INVESTIGATION OF KMGLA(PO4)(2) PHOSPHATE DOPED WITH EUROPIUM

A new compound KMgLa(PO4)(2), isotypic with monoclinic LaPO4, is reported. Its cell parameters have been determined from X-ray powder diffraction data. Crystallization occurs in the monoclinic space group P2(1)/n (No. 14) with a = 6.839(3) Angstrom, b = 7.066(1) Angstrom, c = 6.523(3) Angstrom, beta = 103.42(4)degrees, and Z = 2. It was found that the KMgLa(PO4)(2) phase was isostructural with monoclinic LaPO4. The difference between them was that half of the La atoms in LaPO4 were couplingly substituted with the same amount of Mg and K atoms. This isomorphous substitution was confirmed by IR and Eu3+-doped excitation and emission spectra and by elemental analysis of single crystals. The spectroscopic data were compared with those of LaPO4:Eu3+. (C) 1995 Academic Press, Inc.

CRYSTAL-STRUCTURE AND INFRARED-SPECTRA OF A LANTHANUM COORDINATION COMPOUND WITH GLYCINE, ([LA(GLY)S-CENTER-DOT-2H2O]CENTER-DOT(CLO4)3)N

A lanthanum coordination compound with glycine {[La(Gly)3.2H2O].(ClO4)3}n (Gly = NH+ 3-CH2-COO-) was synthesized and obtained in the form of single crystals. Its X-ray crystal structure has been determined and the IR spectrum has been studied. Crystallo

Comparative X-ray photoelectron spectroscopic study on the desulfurization of thiophene by Raney Nickel and rapidly quenched skeletal nickel

The desulfurization of thiophene on Raney Ni and rapidly quenched skeletal Ni (RQ Ni) has been studied in ultrahigh vacuum (UHV) by X-ray photoelectron spectroscopy (XPS). The Raney Ni or RQ Ni can be approximated as a hydrogen-preadsorbed polycrystalline Ni-alumina composite. It is found that thiophene molecularly adsorbs on Raney Ni or RQ Ni at 103 K. At 173 K, thiophene on alumina is desorbed, while thiophene in direct contact with the metallic Ni in Raney Ni undergoes C-S bond scission, leading to carbonaceous species most probably in the metallocycle-like configuration and atomic sulfur. On RQ Ni, the temperature for thiophene dissociation is about 100 K higher than that on Raney Ni. The lower reactivity of RQ Ni toward thiophene is tentatively attributed to lattice expansion of Ni crystallites in RQ Ni due to rapid quenching. The existence of alumina and hydrogen may block the further cracking of the metallocycle-like species on Raney Ni and RQ Ni at higher temperatures, which has been the dominant reaction pathway on Ni single crystals. By 473 K, the C Is peak has disappeared, leaving nickel sulfide on the surface.

Quantum efficiency of GaAs/AlGaAs thin films with two-dimensional photonic crystals

The optical properties of GaAs/AlGaAs thin films with photonic crystals were investigated by measuring their photoluminescence spectra. The spectral intensities, lifetimes, and quantum efficiencies decreased greatly compared with those in blank material without photonic crystals. The quantum efficiencies in the material were also calculated from spectral intensities and lifetimes and the quantum efficiencies calculated from those two methods agreed with each other to some extent.

Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot

We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g((2))(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.

Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

Surface recombination in GaAs thin films with two-dimensional photonic crystals

The dynamics of spontaneous emission from GaAs slabs with photonic crystals etched into them are investigated both theoretically and experimentally. It is found that the intensity of spontaneous emission decreases significantly and that photonic crystals significantly shorten the lifetime of emission. The mechanics of enhancement and the reduction of emission from photonic crystals are analyzed by considering the surface recombination of GaAs. The measured and calculated lifetimes agree at a surface recombination velocity of 1.88x10(5) cm/s.

High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs

In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mu m InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20 degrees C to 60 degrees C. The highest output power of 0.435mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.