Mid-Holocene climate variations recorded by palaeolake in marginal area of east Asian monsoon: A multi-proxy study

IEECAS SKLLQG

Late Neogene rock magnetic record of climatic variation from Chinese eolian sediments related to uplift of the Tibetan Plateau

IEECAS SKLLQG

~(265)Bh(Z=107)同位素的首次观测

在兰州的重离子加速器上用 2 6Mg离子束轰击 2 43 Am靶 ,产生了新同位素 2 65Bh .通过观测新同位素 2 65Bh和它的已知子核 2 61Db和 2 57Lr之间的α衰变的关联 ,实现了对新核素的鉴别 .实验中使用了一套新建立的具有数个探测器对的转轮收集探测系统 .将该系统用于特殊的母 -子核搜索模式 ,从而大大减少了本底 .共测得了 8个 2 65Bh的α衰变关联事件 ;同时 4个已知核 2 64Bh的衰变关联事件也被鉴别出来 .实验测得 2 65Bh的α衰变能量为 (9.2 4± 0 .0 5 )MeV ,半衰期为 0 .94 + 0 .70-0 .3 1s .

自旋极化的对称核物质和中子物质的性质

利用Skyrme有效相互作用对自旋极化的同位旋对称核物质和中子物质的特性进行了研究 .用 4种核子 -核子相互作用参数SⅢ ,SKM ,SLy2 30a和SLy2 30b ,分别描绘了核物质状态方程曲线 .可以发现不论使用哪一种参数 ,在自旋极化的同位旋对称核物质和中子物质中都存在着磁化相变转换点 .另外还对磁化系数进行了计算 ,给出了磁化系数比率随密度的变化关系 ,由于无限不连续点的存在 ,进一步肯定了在Skyrme Hartree Fock理论框架内两种物质会出现磁化相变转换点

超重元素(新核素)合成研究进展情况分析和展望

本文在介绍和分析国际、国内在超重元素 (新核素 )合成实验研究与理论研究进展情况的基础上对我国今后如何从理论与实验的结合上开展超重元素 (核 )合成研究工作提出一些看法和建议 ,提供讨论

The level and distribution of chromosomal aberration of tomato seeds at different penetration depths of carbon ions

The relationship between the penetration depth and the level and distribution of chromosomal aberration of the root tip cells were investigated by exposure of the superposed tomato seeds to 80 MeV/u carbon ions. The results showed that on the entrance of the beam the chromosomal aberration level was low. Damage such as breaks and gaps were dominant. At the Bragg peak, the chromosomal aberration level was high. The yields of dicentrics, rings and disintegrated small chromosomes increased but the yields of breaks and gaps decreased. These results are consistent with the distribution of the physical depth dose pro. le of carbon ions. It is effective to deposit the Bragg peak on the seeds to induce hereditary aberration in the mutation breeding with heavy ions.

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (similar to 0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn-i level to the top of the valence band and the violet peak from the In-Zn donor level to the V-Zn level, respectively.

Microstructural evolution in silicon implanted with chlorine ions

In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microscopy (TEM) in both the plane-view and the cross-sectional view. The implanted layer was amorphized after chlorine implantation even at the lowest ion fluence, while re-crystallization of the implanted layer occurs on subsequent annealing at 1073 K. In the annealed specimens implanted above the lowest fluence three layers along depth with different microstructures were found, which include a shallow polycrystalline porous layer, a deeper single-crystalline layer containing high density of gas bubbles, a well separated deeper layer composed of dislocation loops in low density. With increasing ion fluence the thickness of the porous polycrystalline layer increases. It is indicated that chlorine can suppress the epitaxial re-crystallization of implanted silicon, when the implant fluence of Cl ions exceeds a certain level.