Effect of La3+ on microwave dielectric properties of (Pb0.45Ca0.55) (Fe0.5Nb0.5)O-3 ceramics

In this work, microwave dielectric properties of A-site substitution by La3+ in (Pb0.45Ca0.55) (Fe0.5Nb0.5) 03 system were investigated. Microwave dielectric properties of A-site charge unbalance substitution of [(Pb0.45Ca0.55)(1-x) La-x] (Fe0.5Nb0.5)O-3(+) (P45CLFN) were improved because the solid solution of small amount of surplus La3+ with (Pb, Ca)(2+) could eliminate oxygen vacancies, and the formation of secondary phase (pyrochlore) was also caused by surplus La3+. The decreasing of dielectric constant with the increase of La3+ content is due to the formation of pyrochlore. The grain size is changed slightly and Q(f) values (7000 similar to 7300 GHz) are almost unchanged at x = 0.02 similar to 0.10, but the temperature coefficient of resonant frequency (TCF) are increased and changed from negative to positive. TCF is zero at x 0.075 with Q(f) = 7267 GHz and K = 89. TCF of all specimens are within +/- 5 x 10(-6)degrees C-1.

Synthesis and characterizations of Al-doped Zn0.95Ni0.05O nanocrystals

Nanocrystalline Zn0.95-xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an autocombustion method. X-ray absorption spectroscopy, high-resolution transmission electron microscopy, energy-dispersive spectrometry and Ni 2p core-level photoemission spectroscopy analyses revealed that some of the nickel ions were substituted for Zn2+ into the ZnO matrix while others gave birth to NiO nanoclusters embedded in the ZnO particles. The Zn0.95Ni0.05O sample showed no enhancement of room-temperature ferromagnetism after Al doping. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Influences of Al doping concentration on structural, electrical and optical properties of Zn0.95Ni0.05O powders

Nanocrystalline Zn0.95 - xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicate that all Al-doped Zn0.95Ni0.05O samples have the pure wurtzite structure. Transmission electron microscope analyses show that the as-synthesized powders are of the size 40 - 45 nm. High-resolution transmission electron microscope, energy dispersive spectrometer and X-ray photoemission spectroscope analyses indicate that Ni2+ and Al3+ uniformly substitute Zn2+ in the wurtzite structure without forming any secondary phases. The Al doping concentration dependences of cell parameters (a and c), resistance and the ratio of green emission to UV emission have the similar trends. (c) 2007 Elsevier B.V. All rights reserved.

Absence of room-temperature ferromagnetism in Al-codoped Zn0.95Co0.05O nanoparticles

Nanocrystalline Zn0.95-xCo0.05AlxO (x=0, 0.01, 0.05) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicated that Al-doped Zn0.95Co0.05O samples had the pure wurtzite structure. X-ray absorption spectroscopy, high-resolution transmission electron microscope, energy dispersive spectrometer and Co 2p core-level photoemission spectroscope analyses indicated that Co2+ substituted for Zn2+ without forming any secondary phases or impurities. Resistance measurements showed that the resistance values of Co and Al codoped samples were still so large in the giga magnitude. Magnetic investigations showed that nanocrystalline Al-doped Zn0.95Co0.05O samples had no indication of room temperature ferromagnetism. (C) 2007 Elsevier B.V. All rights reserved.

Electric field enhancement in guided-mode resonance filters

Electric fields inside guided-mode resonance filters (GMRFs) may be intensified by resonance effects. The electric field enhancement is investigated in two GMRFs: one is resonant at normal incidence, the other at oblique incidence. It is shown that the two GMRFs exhibit different behaviors in their electric enhancement. Differences between the electric field distributions of the two GMRFs arise because coupling between counter-propagating modes occurs in the first case. It is also shown that the order of the electric field of maximum amplitude can be controlled by modulation of the dielectric constant of the grating. (c) 2006 Optical Society of America.

鉴别用变方位角导模共振滤光片的设计

设计了在0°和90°方位角下都具有低旁带的鉴别用导模共振滤光片。利用严格的耦合波理论，分析了这种器件在不同入射角、不同光栅槽深和覆盖不同厚度SiO2层情况下的衍射特性。得到了满足鉴别要求的导模共振滤光片结构。在30°入射角情况下，对于TE模式偏振光，设计的滤光片在0°和90°方位角下都有形状对称的反射光谱、低的旁带、两个位置分开的共振峰和适当的半宽度。

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率,低旁带反射,窄带以及带宽可控等优良特性引起了人们极大的关注,采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能,在弱调制模式下,其共振带宽可以被压缩到零点几纳米,但是由于介质表面和空气层的菲涅耳反射,使得偏离或者远离共振区时的反射率偏高,根据等效介质理论,亚波长光栅在远离共振区可以被看为均匀的薄膜,本文通过对导模共振光栅进行单层、双层以及三层抗反射设计,有效的降低了导模共振光栅的旁带反射率,从而在可见光波段获得了性能优良的共振滤波器.

可见光波段双层浮雕型导模共振滤波器设计与分析

基于傅里叶模式理论分析了双层浮雕型导模共振光栅的共振效应,分别讨论了光栅的槽深、剩余厚度、周期以及填充系数对峰值反射率、带宽、旁带反射率的影响.数据计算表明,欠刻蚀情形的误差宽容度远远优于过刻蚀情形,两者在光栅槽深相对误差小于15%的范围内,都能保证共振峰的衍射效率高于99.5%,在相同的误差范围内,共振峰线宽的相对误差将分别达到7%和60%,因此厚度误差集中反映在对共振线宽的改变上.另外,光栅周期和填充系数的变化将明显改变共振峰中心波长和线宽.

Study on the layer structure of W/C multilayers deposited by magnetron sputtering using x-ray reflectivity

A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x-ray resonant reflectivity and hard x-ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright (C) 2008 John Wiley & Sons, Ltd.

Quantum tunneling through graphene nanorings

We investigate theoretically quantum transport through graphene nanorings in the presence of a perpendicular magnetic field. Our theoretical results demonstrate that the graphene nanorings behave like a resonant tunneling device, contrary to the Aharonov-Bohm oscillations found in conventional semiconductor rings. The resonant tunneling can be tuned by the Fermi energy, the size of the central part of the graphene nanorings and the external magnetic field.

Optical properties of UO2 and PuO2

We perform first-principles calculations of electronic structure and optical properties for UO2 and PuO2 based on the density functional theory using the generalized gradient approximation (GGA) + U scheme. The main features in orbital-resolved partial density of states for occupied f and p orbitals, unoccupied d orbitals, and related gaps are well reproduced compared to experimental observations. Based on the satisfactory ground-state electronic structure calculations, the dynamical dielectric function and related optical spectra, i.e., the reflectivity, adsorption coefficient, energy-loss, and refractive index spectrum, are obtained. These results are consistent with the available experiments.

Mode Characteristics for Square Resonators With a Metal Confinement Layer

Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.

Design of a compact polarizing beam splitter based on a photonic crystal ring resonator with a triangular lattice

We propose and simulate a new kind of compact polarizing beam splitter (PBS) based on a photonic crystal ring resonator (PCRR) with complete photonic bandgaps. The two polarized states are separated far enough by resonant and nonresonant coupling between the waveguide modes and the microring modes. Some defect holes are utilized to control the beam propagation. The simulated results obtained by the finite-difference time-domain method show that high transmission (over 95%) is obtained and the polarization separation is realized with a length as short as 3.1 mu m. The design of the proposed PBS can be flexible, thanks to the advantages of PCRRs.

Origins of magnetism in transition metal doped Cul

Cupric iodide is a p-type semiconductor and has a large band gap. Doping of Mn, Co, and Ni are found to make gamma-CuI ferromagnetic ground state, while Cr-doped and Fe-doped CuI systems are stabilized in antiferromagnetic configurations. The origins of the magnetic ordering are demonstrated successfully by the phenomenological band coupling model based on d-d level repulsions between the dopant ions. Furthermore, using a molecular-orbital bonding model, the electronic structures of the doped CuI are well understood. According to Heisenberg model, high-T-C may be expected for CuI:Mn and CuI:Ni if there are no native defects or other impurities.

Spin-dependent transport and spin polarization in coupled quantum wells

We theoretically investigate the electron transport and spin polarization of two coupled quantum wells with Dresselhaus spin-orbit interaction. In analogy with the optical dual-channel directional coupler, the resonant tunneling effect is treated by the coupled-mode equations. We demonstrate that spin-up and -down electrons can be completely separated from each other for the system with an appropriate system geometry and a controllable barrier. Our result provides a new approach to construct spin-switching devices without containing any magnetic materials or applying a magnetic field. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2981204]