Bond-charge calculation of electro-optic coefficients of diatomic crystals

A theoretical method has been set up to calculate the electrooptic tensor coefficients r(ijk), based on the Phillips-Van Vechten (PV) dielectric theory and the Levine bond charge model, Starting from the crystal structure data and only introducing the experimentally determined optical permittivity and dielectric constant, the electro-optic tensor coefficients r(ijk) can be quantitatively predicted, The theoretical calculations are in good agreement with experiment in the case of zinc blende and wurtzite crystals, For zinc blende crystals, the effects of covalent radii on the linear electro-optic coefficients are discussed. (C) 1997 Academic Press.

Charge transport of indigo-carmine doped polypyrrole

Charge transport in polypyrrole doped with indigo-carmine was investigated by the method of electrochemical alternating current impedance. By the nonlinear least square fitting, the equivalent circuit and parameter of each component are obtained. The apparent diffusion coefficients and heterogeneous electron transfer constants are given. It is found that, along with the increasing of film thickness, D-app and k(0) increase also.

SYNTHESIS AND CHARACTERIZATION OF POLYACRYLATES CONTAINING CHARGE-TRANSFER GROUPS

Polyacrylates containing para-nitro azobenzene have been synthesized by free radical polymerization. The influence of the length of the spacer of the homopolyacrylates (HPn, n=3,4,6), content of methyl acrylate in the copolyacrylates (CP6) with para-nitro azobenzene groups on the thermal properties, such as liquid crystallinity, Tg and Tm, was studied by DSC, WAXD and polarized optical microscopy. Among the polymers studied, only the homopolyacrylate (HP6)with six carbon atoms in the spacer exhibited a nematic phase. The second-harmonic generation (SHG) signal of the poled HP6 film was detected qualitatively by Maker-fringer method.

A STUDY OF CHARGE SEPARATION AND ELECTRON-CAPTURE INDUCED DECOMPOSITION SPECTRA OF PHENYLENEDIAMINE ISOMERS

The structures and decomposition reactions of doubly charged phenylenediamines were studied by means of charge separation (CS) and electron capture induced decomposition (ECID) spectra. The deisomerization of the three isomers is prior to the metastable d

CHARGE COMPENSATION AND LUMINOUS CENTERS IN CAF2-CE3+

We synthesize some powder phosphors of CaF2:Ce3+ under different reaction conditions, find three luminous centres, and demonstrate that each luminous centre is formed with different charge compensation procedures.

CHARGE COMPENSATION AND VALENCY STABILITY OF EU(II)-DOPED KMGF3 CRYSTAL

The spectrochemistry of Eu2+-doped perovskite KMgF3 was examined and discussed. Eu2+ can replace some of the K+ in the KMgF3 crystal, and simultaneously the corresponding cation hole can be compensated with the F- or O2- in the matrix. The emission intensity of Eu2+ due to the f --> f transition increased when Na+, Rb+ or F- was doped in KMgF3:Eu2+. Two mechanisms of charge compensation were proposed. No obvious valence change of Eu2+ occurred in KMgF3:Eu2+ after calcinating at high temperature, e.g. 900-degrees-C. It was found that the valence stability of Eu2+ improved after incorporation into the matrix.

THE CHARGE-DISTRIBUTION AND THE ELECTRIC-FIELD GRADIENT IN THE HIGH-TEMPERATURE SUPERCONDUCTOR TLBA2CAN-1CUNO2N+3 (N = 1 TO 3)

The net charges at atoms in the high-temperature superconductor TlBa2Can-1CunO2n+3 (n = 1 to 3) are calculated by means of the tight-binding approximation based on the EHMO method. The results indicate that the charge distribution in this kind of compounds possesses a specially layered arrangement. An insulating Ba-Ba layer is inserted between the Cu-O layer and the Tl-O layer. There may exist a weak coupling between the Cu-O layer and the Tl-O layer through the interaction of the same O(2) atom with both the Cu atom and the Tl atom. The existence of the Ca in the compounds can cause the valence fluctuation at the Cu atom. The calculated electric field gradients at atoms implies that the conducting electron or hole may move in the Cu-O layer, which is closest to the Tl-O layer, along the a-b plane.