Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively.

Electron trapping materials for use in a picosecond infrared streak camera

We describe our research on the employment of an infrared upconversion screen made of electron trapping material (ETM) in combination with the high sensitivity of the S-20 photocathode responsive to visible radiation to produce a streak camera arrangement capable of viewing and recording infrared incident pulses. The ETM-based upconversion screen converts 800-1600 nm infrared radiation to visible light which is viewed or recorded by the S-20 photocathode. The peak values of the upconversion efficiency are located at 1165 nm for CaS:Eu, Sm and 1060 nm for CaS:Ce, Sm. The present experiment showed time resolution was 12.3 ps for a CaS:Eu, Sm screen and 8.4 ps for a CaS:Ce, Sm screen. The minimum detectability is 4.8 x 10(-9) J/mm(2) (minimum detectability of the coupled visible streak camera is 8.3x10(-10) J/mm(2)). Other parameters, such as spatial resolution and dynamic range, have also been measured and analyzed. The results show ETM can be used in the measurement of infrared ultrafast phenomena up to picosecond time domain. In consideration of the limited number of trapped electrons in ETM, the infrared-sensitive streak camera consisting of an ETM-based upconversion screen is suitable to operate in the single shot mode. (C) 1999 American Institute of Physics. [S0034-6748(99)00112-4].

Mid-Holocene climate variations recorded by palaeolake in marginal area of east Asian monsoon: A multi-proxy study

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