429 resultados para TRANSIENT ENERGY-TRANSFER


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全文分两部分,(1).PsⅡ反应中心色素分子光破坏的分子机理研究;(2).PSⅡ反应中心原初反应的动力学机理研究。 在第一部分中,在分离纯化的光系统Ⅱ反应中心Dl/D2/Cyt b559复合物中,采用高效液相色谱技术,首次发现PSⅡ反应中心去镁叶绿素分子的光照破坏,研究了去镁叶绿素的光破坏机理,观察到PsⅡ反应中心内部存在一个与光化学活性无关的去镁叶绿素分子,从而提供了PSⅡ反应中心存在两条电子传递链的第一个实验证据,提出了去镁叶绿素对PsⅡ反应中心的光保护假说和光合作用反应中心第二条电子传递支路的光保护假说。用高效液相色谱技术还观察到PSⅡ反应中心的6个叶绿素a分子,有三种不同的存在状态,认为PSl反应中心的最小色素组成为每个反应中心含有4个叶绿素a和2个去镁叶绿素。用光破坏的方法证明PsⅡ原初电子供体P680是由两个叶绿素n分子组成,认为P680是以一个二聚体形式存在,首次发现P680的光破坏过程包含失去中心镁原子的反应。 在第二部分中,用皮秒和飞秒时间分辨光谱技术,在PsⅡ颗粒、PsⅡ核心复合物和PSⅡ反应中心三个层次上,研究了PsⅡ原初反应的动力学性质,着重研究电荷分离和PsⅡ反应中心内部的能量传递过程。结果表明,B-胡萝卜素和P680之间的能量传递时间常数为350p8左右,去镁叶绿素a与P680之间的能量传递时间为lOOp8左右,提出了可能的动力学模型。 在目前分歧最大的原初电荷分离时间常数测定这一焦点问题上,得到的初步结果表明PsⅡ反应中心电荷分离时间为3-3.5pa左右,这一结论与文献上报道的21pa不同,丽倾向于支持国际上3p8的观点。

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应用改进DEAE-Toyopearl 650S阴离子交换柱层析从高等植物菠菜(Spinacia oleracea)中分离纯化了核心天线复合物CP43和CP47。并对它们的纯度和完整性色素种类和含量,以及色素分子的结合状态进行了研究并对色素分子间的能量传递机制进行了讨论。结果如下: 1、HPLC检测结果表明:纯化的CP43和CP47均只含Chla和β-Car两种色素分子,并且,平均每分子CP43多肽含19-20分子Chla和4-5分子β-Car;而平均每分CP47则含20-21分子Chla和3-4分子β-Car。 2、以436nm和480nm激发光激发样品得到的CP43和CP47的低温荧光发射光谱的最大荧光发射峰分别位于683nm和693nm。进一步发现,CP43和CP47,在相同条件下分别以436nm和480nm激发光激发样品得到的低温荧光发射光谱经归一化后几乎完全重叠,而且400-500nm波长范围内的激发光扫描得到的三维低温荧光发射光谱沿激发轴具有较好的对应关系,表明纯化的CP43和CP47都具有较高的完整性。 3、纯化的CP43和CP47的吸收光谱的红区最大吸收峰分别位于671nm和674nm。该光区的导数光谱均分辨出偏蓝区和偏红区两个子峰,CP43的这两个子峰分别位于669nm和682nm;而CP47的两个子峰则分别位于669nm和680nm。进一步用包含这两个子峰的高斯解析参数对红区最大吸收峰进行拟合,结果证明,拟合的曲线与实测曲线几乎完全吻合,这表明,CP43和CP47均至少包含两种不同状态的Chla分子。 3.1应用不同的变性温度处理CP43,发现随变性温度的不断提高,其红区最大吸收峰的峰值逐渐减小,四阶导数光谱分辨出的两个子峰同时减小,但差光谱显示:随处理温度的不断提高,这两个组分峰值的变化并不同步进行,较低温度范围内(55℃以下)682nm吸收峰下降明显,而较高温度范围内(55℃以上),669nm吸收峰下降明显。 同时,随处理温度不断提高CP43脱辅基蛋白的结构也在不断发生变化,其变化过程明显表现出两个跃变阶段。这两个跃变阶段分别出现在40~50℃范围内和55~60℃范围内,恰与吸收光谱两个组分峰变化的转变过程相一致。这证明,CP43中分别位于669nm和682nm的不同的色谱组分即代表两种不同结合态的Chla分子,分别简称为“CP43-669”和“CP43-682”。它们在色素蛋白复合物中所处的环境不同,因而对蛋白质结构的依赖性不同,前者更高地依赖于蛋白复合物的整体构象,而后者则主要依赖于蛋白质的二级结构。 3.2 经不同的变性温度处理的CP47,其红区最大吸收峰的峰位逐渐蓝移,而吸收峰值无明显的变化,只有当处理温度提高到65℃以后,蓝移后的吸收峰值(669nm)才开始明显减小;四阶导数光谱表现为680nm吸收峰的信号逐渐下降669nm的吸收信号逐渐明显;处理减对照差光谱只观察到680nm吸收值的逐渐减少,而几乎观察不到669nm吸收值的变化。同时,随变性温度的不断提高,CP47的脱辅基蛋白的结构也发生相应的变化与CP43不同,蛋白结构变化最大的温度范围为60℃~65℃之间,但同CP47的峰位蓝移、导数光谱中680nm信号的减小,以及差光谱中680nm吸收值的减小相一致。由此认为,同CP43一样,CP47的吸收光谱中分辨出的分别位于669nm和680nm处的两个不同光谱组分亦分别代表两种不同结合状态的Chla分子,分别简称为“CP47-669”和“CP47-680”,与CP43中的相应组分对应,它们处于不同的蛋白环境中,从而对蛋白质结构变化的依赖性不同。 3.3 CP43和CP47的CD光谱表现出明显的正负双峰,表明色素分子间存在较强的激子相互作用。随变性温度的不断提高,正负CD双峰的信号逐渐减弱,变化过程与脱辅基蛋白结构的变化以及CP43-682的变化相一致,表明色素分子间的激子相互作用更高依赖于CP43-682和CP47-680。并认为CP43-682和CP47-680可能以二聚体或多聚体的形式存在,并且二聚体或多聚体的形成依赖于蛋白天然构象。而CP43-669和CP47-669则以单体的形式位于蛋白结构中相对伸展的区域。并提出:在CP43-682以CP47-680分子之间,激发能主要以激子偶合机制进行而在CP43-669,CP47-669分子间及CP43-669至CP43-682间,CP47-669至CP47-680之间激发能则主要以Foster机制进行。 4、以488nm激发光得到的CP43和CP47的共振拉曼光谱都具有全反式构型类胡萝卜素分子的四个典型特征峰由此认为CP43和CP47中的β-Car分子亦具有全反式构型;与溶于丙酮抽体物中的β-Car分子相比较,CP43和CP47中的β-Car分子的共振拉曼光谱中具有较强的960cm~(-1)的拉曼峰,表明,CP43和CP47中的β-Car分子具有扭曲的构象。 应用经归一化后的吸收光谱与荧光激发光谱相比较的办法发现CP43和CP47中存在β-Car分子和Chla分子间的能量传递其能量传递效率分别为29.8~29.9%和52.3~56.9%。这表明,在正常条件下,CP47中β-Car分子和Chla分子间的能量传递效率远大于CP43。此外,当选用蛋白结构变化最明显的热变性温度处理样品后,发现,不论CP43还是CP47中β-Car与Chla分子间的能量传递效率大大降低,表明,这两种色素分子间的能量传递严格依赖于蛋白复合物的天然构象,并认为,正常条件下,CP43和CP47内β-Car与Chla分子间的空间距离较近,可能不大于10A,CP43和CP47相比较,CP47内这两种色素分子间的距离更近。并进一步提出,在CP43和CP47中,β-Car到Chla分子间的能量传递最大可能以Dexter的电子交换机制进行。

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摘要 "发状念珠藻(Nostoc flagelliforme Born. Et Flah.),俗名发菜,是生长于干旱、半干旱土壤表面的陆生蓝藻,具有极强的抗旱能力。发菜光合作用方面的研究大多处于整体细胞水平,且研究手段非常有限。本实验对发菜光合特征进行深入研究,并探讨了发菜在干湿交替过程中能量传递的变化情况。 叶绿素和藻胆素是发菜细胞中两种主要的光合色素。发菜复水后光合活性完全恢复时,在室温(20℃)或低温(77K)下,其绝大部分的荧光是由于藻胆素被激发而产生。在室温下,大部分荧光来自藻胆体;当叶绿素被激发后,产生的荧光非常微弱。在低温下,藻胆素被激发后,荧光发射光谱中可分辨出藻胆蛋白、光系统Ⅰ和光系统Ⅱ的发射峰;叶绿素被激发后,荧光发射光谱包括光系统Ⅰ和光系统Ⅱ的荧光。相比之下,室温荧光发射光谱不适于用做发菜细胞光合作用方面的研究。 我们设计了一种新方法,从野生发菜细胞中分离得到类囊体膜及细胞质膜,并对其性质进行分析。发菜细胞外复杂的胶质结构使得现有破碎其它蓝藻细胞的方法无法破碎发菜细胞。通过实验发现,联合使用细胞破碎仪和毛地黄皂甙(0.3%)可有效破碎发菜细胞;并且毛地黄皂甙在低浓度下(≦0.5%),对色素与蛋白的结合不会造成破坏作用。随后,通过蔗糖密度梯度离心可将细胞质膜与类囊体膜分离。发菜类囊体膜的光谱性质与其它蓝藻相似。细胞质膜除结合有类胡萝卜素外,还结合有少量叶绿素前体。类囊体膜和细胞质膜膜脂及脂肪酸组成相似。其中,十六碳烯酸[16:1(9)]和亚麻酸[18:3(9,12,15)]是含量最高的两种脂肪酸,分别占总脂肪酸含量的三分之一左右。高含量的多不饱和脂肪酸可能和发菜极强的抗旱能力有关。 我们首次对发菜捕光色素蛋白复合物-藻胆体的组成和结构进行分析。发菜藻胆体为“3核+6杆”的半圆盘结构。组成藻胆体的藻胆蛋白包括藻蓝蛋白和别藻蓝蛋白。两个藻蓝蛋白六聚体通过连接肽组成藻胆体的“杆”结构。在“杆”结构中等量分布着两条连接肽(分子量分别为29kDa和34kDa)为杆连接肽和核杆连接肽。而“核”结构中核膜连接肽的分子量为103kDa。 发菜在无霜期,几乎每天经历一次复水-干燥过程:夜间的结露使发菜在黑暗中复水,而清晨太阳升起后,在光照下迅速失水进入休眠状态。我们研究了发菜在黑暗中的复水过程及在光照下失水过程中藻胆体与光系统能量传递的变化情况。发菜在黑暗中复水后,光系统Ⅱ活性无法恢复。藻胆体内及藻胆体与光系统Ⅰ的能量传递在5分钟内恢复;而藻胆体与光系统Ⅱ的能量传递只能部分恢复。我们设想,发菜在复水过程中通过双扳机-水和光-控制光合活性的恢复,以及在黑暗中部分恢复藻胆体与光系统Ⅱ的能量传递,将减少不必要的能量消耗与通过光合作用储备尽可能多的化学能-这两个生存策略有机的结合起来。发菜在光照下的失水过程中,光合活性在含水量降至90%前基本保持稳定,随后迅速下降。而在含水量达到150%后,藻胆体内的能量传递便开始受到抑制,并且随着含水量的降低,该抑制现象逐步加剧。这样,发菜在干燥过程中,通过抑制藻胆体内的能量传递,减少了传递到光系统Ⅱ反应中心的能量,从而避免了在光合活性下降过程中过剩光能对光系统Ⅱ产生的破坏作用。"

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细胞色素b6f蛋白复合体(Cyt b6f)是光合链中连接两个光系统(PSII 和PSI)的中间电子载体蛋白复合物,其主要的生理功能是催化电子传递和质子跨膜转移,形成跨膜质子电化学梯度,为ATP的合成提供能量,在光合作用光能转化过程中占有很重要的地位。细菌和莱茵衣藻Cyt b6f的晶体结构已于2003年底获得了近原子水平的解析,但有关该复合物中两种色素(Chl a和β-Car)的生理功能及其机理尚无明确的解释。预计它们将成为今后几年的研究热点,因为揭示Cyt b6f蛋白复合体中Chl a和β-Car分子的生理功能对于进一步阐明光合作用高效转能及其调控的分子机理具十分重要的意义。鉴于目前尚未见到海洋绿藻Cyt b6f的报道,本文以海洋绿藻—假根羽藻(Bryopsis corticulans)类囊体膜上的Cyt b6f蛋白复合体为对象,对其中的类胡萝卜素的分子结构与生理功能进行了比较系统地研究。 首先,我们改进了原用于菠菜类囊体膜Cyt b6f的分离、纯化流程,在原流程的基础上增加了一次2 mol/L NaBr洗膜,彻底地去除了膜表面的杂蛋白;还调整了第二次硫酸铵分级沉淀时的饱和度,并将38-45%饱和度下的沉淀物确定为需要收集的Cyt b6f制剂。采用此改进的流程,我们首次从假根羽藻类囊体膜中分离纯化了高活性、高纯度的Cyt b6f制剂。SDS-PAGE分析的结果显示该制剂的4个多肽亚基 (Cytf 、Cyt b6 、Rieske[Fe-s]及亚基IV)的表观分子量分别为34.8、24.0、18.7和16.7 kD;Cyt b6 / f 比值接近2.0, 其纯度值为9.9 nmol cyt f/mg;其催化电子传递的活性 (C10-PQH2→PC)为73 e/s。HPLC 和共振拉曼光谱分析表明,假根羽藻Cyt b6f中的类胡萝卜素为α-胡萝卜素分子,它是一种在Cyt b6f中尚未报道过的类胡萝卜素。定量分析表明,每个假根羽藻Cyt b6f单体中全反式(all-trans)和9顺式(9-cis)α-胡萝卜素的含量分别为0.2和0.7个分子,另外还含有1.2分子的Chl a。CD光谱分析表明该9-cis-α-胡萝卜素处在一个不对称的蛋白环境中。TLC分析表明该制剂是一种缺脂的Cyt b6f蛋白复合体。 采用稳态荧光激发光谱,时间分辨吸收光谱及Chl a的光破坏实验对假根羽藻Cyt b6f中α-胡萝卜素的功能进行了研究。结果表明,Cyt b6f中α-胡萝卜素可以将它吸收的光能传递给Chl a,其能量传递效率为62.4%,提出α-胡萝卜素分子与Chl a分子之间的单线态能量传递是遵从Föster 机制进行的;α-胡萝卜素分子对Chl a分子有一定的光保护作用,这种保护作用是通过清除单线态氧来实现的。另外还发现Cyt b6f中的Chl a分子可能与其周围的氨基酸残基存在相互作用,认为这是其进行自我光保护的一种方式。 此外,还采用HPLC研究了光和暗交替对假根羽藻Cyt b6f中α-胡萝卜素构型的影响,并对假根羽藻Cyt b6f选择结合α-胡萝卜素的原因进行了初步的分析。

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光系统II(PSII)是存在于类囊体膜中的多亚基色素蛋白复合物,是吸收光能、催化光诱导水裂解释放氧气、质子和电子的重要机构。它在体内的基本单位是由外周天线蛋白(LHCII)与PSII核心复合物结合形成的PSII-LHCII超分子复合物,这一结构保证了LHCII吸收的能量能够快速有效的传递到PSII反应中心(RC),进行原初光化学反应。 本论文分为两部分:1、利用捕光色素蛋白复合物(LHCII)与PSII核心复合物在以DGDG、PG、SQDG三种类囊体膜脂形成的脂质体中重组的方法,研究了LHCII与PSII在脂膜上结构与功能的相互作用;2、通过研究光破坏和色素置换对PSII RC的影响,探讨了RC中不同色素的功能。主要结果如下: 1、LHCII与PSII核心复合物的蛋白脂质体研究: 将OECC(粗提核心复合物)、pdOE(纯化核心复合物)、LHCII(大量天线)制剂分别与脂质体重组并研究了其光谱性质。LHCII在与脂质体重组前表现出典型的聚集态光谱特征,重组后吸收和荧光发射峰发生明显蓝移;LHCII、OECC和pdOE三种蛋白脂质体与重组前的样品相比荧光发射强度增加;表明脂环境影响了色素蛋白复合物的聚集状态以及色素和蛋白之间的相互作用。 OECC和pdOE分别与LHCII在脂质体中重组,得到两种重组蛋白(LHCII-OECC和LHCII-pdOE)脂质体,用冰冻蚀刻电镜技术和低温荧光光谱的方法研究其结构和功能特征。LHCII和核心复合物(OECC或pdOE)结合形成PSII-LHCII重组颗粒,并在脂质体中均匀排布,阻止了LHCII晶格状结构的形成。重组蛋白脂质体的吸收光谱既有LHCII的吸收特征,又有核心复合物的特征吸收峰,但低温荧光光谱的主要发射峰是核心复合物的特征峰(684 nm-685 nm),而不是LHCII的特征峰(680 nm);而且激发不同色素得到的荧光发射光谱基本一致,这些结果证明LHCII吸收的能量传递到了核心复合物中,在重组蛋白脂质体中不同色素蛋白复合物在结构和功能上都实现了相互偶联。 通过对OECC或pdOE与LHCII重组形成的蛋白脂质体放氧或DCPIP光还原活性的检测研究了PSII光化学活性特征。LHCII和核心复合物(OECC或pdOE)的重组蛋白脂质体与单独核心脂质体相比,在强光和弱光下光化学活性都明显提高。这从另一个角度证明了核心复合物与LHCII的功能偶联,LHCII的结合使捕光截面积增大,从而使PSII光化学活性增加。 用77K飞秒时间分辨荧光光谱分析了几种蛋白脂质体的能量传递和捕获情况。LHCII、OECC和pdOE三种蛋白脂质体的主要荧光衰减组分分别是670 ps(发射峰在680 nm)、650 ps(发射峰在690 nm)和570 ps(发射峰在685 nm)。LHCII-OECC和LHCII-pdOE脂质体的主要衰减组分分别是940 ps(发射峰在690 nm)和840 ps(发射峰在685 nm),并且出现了一个在核心复合物脂质体和LHCII脂质体中没有的40 ps组分,可以推测,这是LHCII和核心复合物之间达到平衡的时间组分,比激发态衰减的平均寿命要快得多,因此支持了PSII的trap-limited激发能衰减动力学模型。此外,可以看到天线的增大使Chl a荧光衰减的寿命延长,这一特性可能与PSII的光保护机制有关。 LHCII和OECC、LHCII和pdOE在脂质体中都成功的实现了重组,而且在结构和功能上没有明显差异;表明小天线以及23 kDa、17 kDa蛋白可能不是LHCII和核心复合物结合及能量传递所必需的。 2、受体侧光破坏和色素置换对PSII RC的影响: 在800 μmol.m-2 .s-1光照和无外加电子受体、供体的情况下,研究了PSII RC色素的受体侧光破坏情况。Chl a、Pheo和β-Car的光漂白几乎同时发生,其中在680 nm吸收的色素破坏最为显著,670 nm吸收的外周Chl比其他色素更加稳定。荧光发射强度呈先升高后降低的趋势,最大发射峰位逐渐蓝移,表明色素之间的能量传递受到破坏。用β-Car的主要吸收波长488 nm和514.5 nm激发得到两组谱带峰位和强度不同的拉曼光谱,表明在PSII RC中存在两个光谱性质不同的β-Car。光破坏过程中两组谱带的位置和带宽都没有明显变化,表明β-Car的光保护机制不涉及自身构象的变化。 将PSII RC与Cu-Chl a进行色素置换,得到了与Cu-Chl重组的RC(Cu-Chl-RC),含有0.5 Cu-Chl/2Pheo。与对照RC(按同样方式与Chl a置换的RC)和天然RC相比,Cu-Chl含量增加而Chl含量减少,660 nm的吸收增加而670 nm吸收降低,因此推测是外周Chl被替换。色素置换过程对RC的多肽组分及大部分的P680活性没有影响,CD光谱的变化也很小,表明产生CD信号的色素和蛋白环境也没有受到明显影响。但是Cu-Chl-RC的荧光发射强度明显降低,最大发射峰蓝移且峰形发生变化,Cu-Chl可能在重组RC中作为激发态的淬灭剂,阻碍了色素之间的能量传递。

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Changing the ratio of light-harvesting pigments was regarded as an efficient way to improve the photosynthesis rate in microalgae, but the underlying mechanism is still unclear. In the present study, a mutant of Anabeana simensis (called SP) was selected from retrieved satellite cultures. Several parameters related with photosynthesis, such as the growth, photosynthesis rate, the content of photosynthetic pigment, low temperature fluorescence spectrum (77K) and electron transport rate, were compared with those of the wild type. It was found that the change in the ratio of light-harvesting pigments in the mutant led to more efficient light energy transfer and usage in mutant than in the wild type. This may be the reason why the mutant had higher photosynthesis and growth rates.

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E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er2SiO5 crystalline structure was formed as sample treated at 1100 degrees C for 1 h in O-2 atmosphere. Through proper thermal treatment, the 1.53 mu m Er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees C. Analysis of pump-power dependence of Er3+ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). Temperature-dependent photoluminescence (PL) of Er2SiO5 was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er2SiO5 films has been demonstrated with Er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future Si-based light source for Si photonics. (C) 2009 Elsevier B.V. All rights reserved.

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Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

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Silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. The films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). After high temperature annealing, strong visible and infrared photoluminescence (PL) was observed. The visible PL consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (Si-NCs) and Si-NC/SiNx interface states. Raman spectra and HRTEM measurements have been performed to confirm the existence of Si-NCs. The implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m PL.

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Zn2SiO4:Mn2+, Zn2SiO4:Eu3+ and Zn2SiO4:Mn2+ Eu3+ phosphors were prepared by a sol-gel process and their luminescence spectra were investigated. The emission bands from intra-ion transitions of Mn2+ and Eu3+ samples were studied as a function of pressure. The pressure coefficient of Mn2+ emission was found to be -25.3 +/- 0.5 and -28.5 +/- 0.9 meV/GPa for Zn2SiO4:Mn2+ and Zn2SiO4:Mn2+ Eu3+, respectively. The Eu3+ emission shows only weak pressure dependence. The pressure dependences of the Mn2+ and Eu3+ emissions in Zn2SiO4:Mn2+ Eu3+ are slightly different from that in Zn2SiO4:Mn2+ and Zn2SiO4:Eu3+ samples, which can be attributed to the co-doping of Mn2+ and Eu3+ ions. The Mn2+ emission in the two samples, however, exhibits analogous temperature dependence and similar luminescence lifetimes, indicating no energy transfer from Mn2+ to Eu3+ occurs. (c) 2005 Elsevier B.V. All rights reserved.

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Mn-doped ZnS nanocrystals of about 3 nm diameter were synthesized by a wet chemical method. X-ray diffraction (XRD) measurements showed that the nanocrystals have the structure of cubic zinc blende. The broadening of the XRD lines is indicative of nanomaterials. Room temperature photoluminescence (PL) spectrum of the undoped sample only exhibited a defected-related blue emission band. But for the doped samples, an orange emission from the Mn2+ T-4(1)-(6)A(1) transition was also observed, apart from the blue emission. The peak position (600 nm) of the Mn2+ emission was shifted to longer wavelength compared to that (584 nm) of bulk ZnS:Mn. With the increase of the Mn2+ concentration, the PL of ZnS:Mn was significantly enhanced. The concentration quenching effect was not observed in our experiments. Such PL phenomena were attributed to the absence of Mn2+ pairs in a single ZnS:Mn nanocrystal, considering the nonradiative energy transfer between Mn2+ ions based on the Poisson approximation. (c) 2005 Elsevier B.V. All rights reserved.

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Intense room-temperature near infrared (NIR) photoluminescence (980 nm and 1032 nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the F-2(5/2) and F-2(7/2) levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence exitation sprectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminscence of rare-earth ions in SiO2 is very effective.

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Temperature and pressure dependent measurements have been performed on 3.5 nm ZnS:Mn2+ nanoparticles. As temperature increases, the donor-acceptor (DA) emission of ZnS:Mn2+ nanoparticles at 440 nm shifts to longer wavelengths while the Mn2+ emission (T-4(1)-(6)A(1)) shifts to shorter wavelengths. Both the DA and Mn2+ emission intensities decrease with temperature with the intensity decrease of the DA emission being much more pronounced. The intensity decreases are fit well with the theory of thermal quenching. As pressure increases, the Mn2+ emission shifts to longer wavelengths while the DA emission wavelength remains almost constant. The pressure coefficient of the DA emission in ZnS:Mn2+ nanoparticles is approximately -3.2 meV/GPa, which is significantly smaller than that measured for bulk materials. The relatively weak pressure dependence of the DA emission is attributed to the increase of the binding energies and the localization of the defect wave functions in nanoparticles. The pressure coefficient of Mn2+ emission in ZnS:Mn2+ nanoparticles is roughly -34.3 meV/GPa, consistent with crystal field theory. The results indicate that the energy transfer from the ZnS host to Mn2+ ions is mainly from the recombination of carriers localized at Mn2+ ions. (C) 2002 American Institute of Physics.

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Terbium-doped zinc oxide nanoparticles have been prepared by hydrolyzing zinc acetate and terbium acetate. Nanoparticle-matrix-facilitated photoluminescence which is related to Tb3+ ions has been observed for ZnO:Tb nanoparticles. The dependence of emission intensity on doping concentration of Tb3+ ions has been investigated. An energy transfer from excited states of ZnO hosts to dopants is disclosed by the fact that the emission intensity of Tb3+ centers increases with increasing Tb content at the expense of emission from defect states in ZnO matrix.

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The photo- and thermo-stimulated luminescence (PSL and TSL) of BaFCl0.8Br0.2:Sm2+,Sm3+ phosphors were investigated. It is found that the stimulated luminescence intensity of Sm2+ is almost equal to that of Sm3+ even if the content of Sm2+ is much lower than that of Sm3+. Only the stimulated luminescence of Sm2+ is observed in the sample in which the content of Sm2+ is much higher than Sm3+, demonstrating that the PSL or TSL efficiency of Sm2+ is much higher than that of Sm3+. This is attributed to the effective overlap of the e-h emission with the absorption of Sm2+ centers which may make the energy transfer from the electron-hole pairs to Sm2+ effectively. In BaFCl0.8Br0.2:Sm2+,Sm3+ the stimulated luminescence is considered to be occurred via the recombination of photoreleased electrons with the [Sm2+ + h] or [Sm3+ + h] complex and the energy transfer from the electron-hole pairs to the luminescence centers (Sm2+ and Sm3+) is concerned to be the major step to determine the stimulated luminescence efficiency. The X-ray-induced stimulated luminescence is compared and connected to the photon gated hole burning. The net result of the two processes is quite similar and may be comparable. It is suggested from the observations of stimulated luminescence that electron migration between Sm2+ and Sm3+ is not the major process, color centers may play an important role in hole burning. The information from stimulated luminescence is helpful for the understanding of the hole burning mechanism. (C) 1999 Elsevier Science Ltd. All rights reserved.