探测气体平衡及非平衡态的相干反斯托克斯喇曼散射技术

<正> 一、引言 这篇综述的目的在于介绍最近发展起来的相干反斯托克斯喇曼散射(Coherent Anti-Stokes Raman Scattering(CARS))方法在诊断平衡及非平衡态气体中的应用,包括实验及理论两部分.文内还扼要介绍了我们正在筹备的测试系统的方案。 在气体中,特别在稀薄气体非平衡流动中,探测粒子数密度分布;混合含气中各组分,各能态的分布;平动、振动、转动温度;粒子的激发和弛豫过程,都是比较困难的,而这些

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

532 nm激光泵浦硝酸钡晶体产生外腔拉曼激光

由于硝酸钡晶体具有很强的对称振动（频率1047 cm^-1）和较高的拉曼增益,可以用来产生受激拉曼激光.采用单端泵浦的外置拉曼振荡腔与双棱镜分光装置进行了硝酸钡晶体拉曼激光实验,泵浦源为倍频Nd： YAG的532 nm激光,硝酸钡晶体通过水溶液降温法生长,尺寸为10 mm×10 mm×48 mm,采用特殊镀膜的腔镜对各阶斯托克斯光进行优化选择.在泵浦源达到65 mJ时,获得21 mJ一阶斯托克斯光,输出波长为563 nm,以及16 mJ的二阶斯托克斯光,输出波长为599 nm,受激拉曼散射SRS最大的整体

Ba（NO3）2晶体受激拉曼散射的角度分布和脉冲压缩(英文)

报道了利用重复频率为30HZ，波长为532nm的Nd：YAG倍频激光单次通过抽运硝酸钡（Ba（NO3）2）晶体（晶体由水溶液降温法生长，长度为48mm，横截面为10mm×10mm），获得高效率的一阶（563nm），二阶（599nm）和三阶（639nm）斯托克斯光的实验结果．硝酸钡晶体沿着[110]晶轴方向切割．观测到一、二、三阶斯托克斯光呈锥形环分布，一、二、三阶斯托克斯光的散射外边缘与抽运光轴线间的夹角大小分别为1．7°，3．5°，5．0°．同时也观测到Ba（NO3）2的SRS角度分布与抽运光强度无关．

高效率,窄脉冲1198.5nm Ba(NO_3)_2喇曼激光器(英文)

利用1 064 nm的Nd∶YAG激光抽运振荡腔内的硝酸钡晶体,获得高效率、窄脉冲的喇曼激光输出.硝酸钡晶体由水溶液降温法生长,长度为48 mm.喇曼振荡腔由对抽运光、一阶、二阶斯托克斯光有不同反射率的双色平面镜构成.当抽运光功率达到4.5 W时,获得最高的一阶斯托克斯喇曼激光功率为1.48 W,相应的转换效率为32.9%,并测得斜率效率为40%.由于受激喇曼散射的作用,喇曼脉冲光由抽运脉冲光的19.8 ns压缩为2.4 ns,获得的喇曼激光脉冲波形具有的＂上升沿陡峭、下降沿缓慢＂的特性,对其形成过程作了

TeO2对氟铝酸盐玻璃性质和结构的影响

以10MgF2—20CaF2—10SrF2—10BaF2—15YF3—35AlF3氟铝酸盐玻璃为基玻璃引入不同含量的TeO2得到了新的氟碲铝酸盐玻璃．用差热分析方法研究了TeO2对氟铝酸盐玻璃性能的影响，通过拉曼光谱和红外吸收谱来研究玻璃的结构变化．差热分析表明TeO2的增加使玻璃开始析晶温度瓦升高，融化温度％降低，成玻璃能力增加．玻璃结构分析表明氟碲铝酸盐玻璃的结构中存在[FnAl-O—AlFn]、[TeO3]、[TeO2F]和[TeOF2]等多面体，这些多面体由F^-和O^2-离子连接．这种新的氟碲铝

TeO2-ZnCl2-BaO-NaF玻璃系统的结构及中红外透过特性的研究

制备了一种新型的氧卤碲酸盐玻璃：（80-x）TeO2—15ZnCl2-xBaO-5NaF（x=30、20、10、0mol％），对玻璃的机械强度、热稳定性、拉曼光谱、紫外吸收光谱、红外透过光谱等特性进行了研究．通过拉曼光谱分析研究了玻璃组分含量的变化对玻璃结构和红外透过性能的影响．结果表明，随着BaO含量的增加，玻璃在红外波段透过率显著增加，并且红外透过截止波长向长波方向移动，本文对这一实验结果进行了机理性的研究探讨．同时，通过在熔制过程中通入高纯O2，以及引入适量的卤化物有效地除去玻璃中的[OH]基团，使

一种宽带拉曼放大碲酸盐玻璃的拉曼散射特性

The flattening and broadening effects of Ga2O3, GeO2, P2O5 in TeO2-BaCO3-SrCO3- Nb2O5 (TBSN) glass system were studied. The results showed that P2O5 can broaden the vibration band in Raman spectra and Ga2O3, GeO2 can flatten the spectra compared with TBSN glass. And also, they can extend the main vibration band and decrease the vibration intensity of 730 cm^-1 and 780 cm^-1 nonbridging oxygen connected with Te. They also make for the decrease of flatness in 600-870 cm^-1 vibration band and GeO2 has larger effect than Ga2O3 in weakening the vibration of nonbridging oxygen.

光子晶体光纤的研究新进展

综述了光子晶体光纤（PCF）不同于传统光纤的各种性质，并详细讨论了光子晶体光纤在通信和光纤激光等领域的新发展。

Investigation on nonradiative decay of the (Er3+I13/2)-I-4 -> I-4(15/2) transition in different tellurite glass matrix

Three kinds of Er3+-doped tellurite glasses with different hydroxyl groups are prepared by the conventional melt-quenching method. Infrared spectra are measured to estimate the exact content of OH- groups in samples. The maximum phonon energy in glasses are obtained by measuring the Raman scattering spectra. The strength parameters Omega(t) (t = 2, 4, 6) for all the samples are calculated and compared. The nonradiative decay rate of the Er3+ I-4(13/2) -> I-4(15/2) transition are calculated for the glass samples with different phonon energy and OH- group contents. Finally, the effect of OH- groups on fluorescence decay rate of Er3+ is analysed, the constant KOH-Er Of TWN, TZPL and TZL glasses are calculated to be 9.2 x 10(-19) cm(4)s(-1), 5.9 x 10(-19) cm(4)s(-1), and 3.5 x 10(-19) cm(4)s(-1), respectively.

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs on gamma-LiAlO2

We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a gamma-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 x 10 mu m(2) by AFM scan area. The XRD spectra show that the materials grown on gamma-LiAlO2 (100) have < 1 - 100 > m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the gamma-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2 theta. locations of ZnO (002) face in the XRD patterns and the E-2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.