Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

Photoluminescence (PL) investigation was carried out on GaInP/GaAs multiple quantum wells structures grown on (001) and (311) B surfaces of GaAs by gas source molecular beam epitaxy. Superlattice structures of GaAs/GaInP grown on (001) GaAs substrate were also studied in comparison. Deep-level luminescence was seen to dominate the PL spectra from the quantum wells and superlattice structures that were grown on (001) GaAs substrate. In contrast, superior optical properties were exhibited in the same structures grown on (311) B GaAs surfaces. The results suggested that GaAs/GaInP quantum well structures on (311) B oriented substrates could efficiently suppress the deep-level emissions, result in narrower PL peaks indicating smooth interfaces. (C) 1998 American Institute of Physics.

The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-Si) p(+) layer could be modulated by changing the deposition parameters.Current transport in a-Si based n/p ("tunnel") junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p(+) layers which varied the properties of the tunnel junctions, three nc-Si p(+) film samples were grown, measured and analyzed.

An 8-b 1-GSmaples/s CMOS cascaded folding and interpolating ADC

This paper presents an 8-bit low power cascaded folding and interpolating analog-to-digital converter (ADC). A reduction in the number of comparators, equal to the number of times the signal is folded, is obtained. The interleaved architecture is used to improve the sampling rate of the ADC. The circuit including a bandgap is implemented in a 0.18-mu m CMOS technology, and measures 1.47 mm X 1.47 mm (including pads). The simulation results illustrate a conversion rate of 1-GSamples/s and a power dissipation of less than 290mW.

Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

基于AJAX的B/S电子表单填写模式研究

电子表单系统是电子政务建设中重要的一个环节。论述了电子表单系统独立的必要性,调研了几种现有电子表单系统的优缺点,并在此基础上提出一种新型电子表单的框架实现。该电子表单系统提供了一种新型B/S在线填写模式,模式基于AJAX,只需要能支持AJAX的浏览器,不需安装任何附加控件,具有方便快捷的特点。利用AJAX进行数据传输,能有效地节省带宽,节省用户等待时间,并能给用户进行表单填写提供一个友好灵活的操作界面。

PS-b-PEO嵌段共聚物薄膜的结晶与微相分离

半结晶性嵌段共聚物中，嵌段间的不相容性导致的微相分离与结晶嵌段的结晶行为之间存在相互竞争与协同作用。现阶段的大部分工作主要集中于半结晶性嵌段共聚物相分离发生后的结晶行为的结晶动力学和内部链折叠，而对于结晶与微相分离同时发生时的结晶与微相分离行为的研究还较少。 本论文以半结晶性的聚苯乙烯和聚环氧乙烷的二嵌段共聚物（PS-b-PEO）薄膜为研究对象，研究其破坏性（break out）结晶行为，以及研究方形片晶与微相分离结构的关系。 首先，本论文研究了不同相分离取向对结晶行为的影响。我们通过控制膜厚得到垂直基底和平行基底的微相分离薄膜。在溶剂蒸汽中，微相分离取向垂直基底时，仅仅是有序度增加，片晶协同生成。退火时间增加，结晶成核控制生长向扩散控制生长转变，导致片晶周围树枝晶生长。微相分离结构为平行基底取向时，焓主要用于取向转变和有序度增加，体系没有片晶生成，仅边缘效应使树枝晶产生。在结晶取向方面，研究了溶剂蒸汽氛围内界面作用改变使分子链轴垂直基底（flat-on）结晶向分子链轴平行基底（edge-on）结晶的转变。随着溶剂分子扩散到基底界面，结晶嵌段PEO与基底相互作用从强变弱，是发生这种转变的决定因素。 其次，从片晶与微相分离相互转变和片晶上微相分离刷的形成两方面研究片晶与微相分离的竞争与协同关系。退火溶剂的选择性影响片晶与微相分离的竞争。在PEO不良溶剂蒸汽环己烷中发生以下转变：片晶生成，逐渐被微相分离破坏，片晶重新生成；PEO良溶剂水中仅存在结晶到微相分离的转变。即晶体溶解，与PS发生微相分离以获得能量上的有利状态。可溶解嵌段的自由体积增加和结晶嵌段的低溶胀性分别是微相分离和结晶发生的关键因素。片晶与微相分离协同关系研究上，通过调控二嵌段共聚物片晶上聚合物刷的密度（小于14.3大于3.8），获得具有微相分离结构的聚合物刷。PS-PS刷的弱相互作用以及PS与PEO（连接PEO片层结构未结晶的PEO链）之间的强不相容性对片层上微相分离刷的形成起来决定作用。