A single-layer magnetic atom chip for trapping an array of Bose-Einstein condensate

We propose a simple single-layer magnetic microtrap configuration which can trap an array of magnetically-trapped Bose-Einstein condensate. The configuration consists of two series of parallel wires perpendicular to each other and all of the crossing points are cut off for maintaining the uniformity of the current. We analyse the trapping potential, the position of trapping centres and the uniformity of the array of the traps. The trapping depth and trapping frequency with different parameters are also calculated. Lastly, the effect of the cut-off crossing points, dissipate power, chip production are introduced concisely.

Origin of the double-peak structure in longitudinal momentum distributions for single ionization of an He atom in strong laser field

The single ionization of an He atom by intense linearly polarized laser field in the tunneling regime is studied by S- matrix theory. When only the first term of the expansion of the S matrix is considered and time, spatial distribution, and fluctuation of the laser pulse are taken into account, the obtained momentum distribution in the polarization direction of laser field is consistent with the semiclassical calculation, which only considers tunneling and the interaction between the free electron and external field. When the second term, which includes the interaction between the core and the free electron, is considered, the momentum distribution shows a complex multipeak structure with the central minimum and the positions of some peaks are independent of the intensity in some intensity regime, which is consistent with the recent experimental result. Based on our analysis, we found that the structures observed in the momentum distribution of an He atom are attributed to the " soft" collision of the tunneled electron with the core.

Guiding neutral atoms with two current-carrying wires and a vertical bias field on the atom chip

We demonstrate the guiding of neutral atoms with two parallel microfabricated current-carrying wires on the atom chip and a vertical magnetic bias field. The atoms are guided along a magnetic field minimum parallel to the current-carrying wires and confined in the other two directions. We describe in detail how the precooled atoms are efficiently loaded into the two-wire guide. We present a detailed experimental study of the motional properties of the atoms in the guide and the relationship between the location of the guide and the vertical bias field. This two-wire guide with vertical bias field can be used to realize large area atom interferometer.

TWO-DIMENSIONAL ARRAY OF ION TRAPS ON A PLANAR CHIP

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.

Low-loss planar and stripe waveguides in Nd3+-doped silicate glass produced by oxygen-ion implantation

We report on the fabrication and characterization of low-loss planar and stripe waveguides in a Nd3+-doped glass by 6 MeV oxygen-ion implantation at a dose of 1x10(15) ions/cm(2). The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. The refractive index profile of the planar waveguide was reconstructed from a code based on the reflectivity calculation method. The results indicate that a refractive index enhanced region as well as an optical barrier have been created after the ion beam processing. The near-field mode profiles of the stripe waveguide were obtained by an end-fire coupling arrangement, by which three quasitransverse electric modes were observed. After annealing, the propagation losses of the planar and stripe waveguides were reduced to be similar to 0.5 and similar to 1.8 dB/cm, respectively. (c) 2007 American Institute of Physics.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Effects of Yb ion concentration on the spectral properties of lead silica glasses

The spectral properties in different concentration of Yb ions (0.5-5 mol%)-doped silica glasses are explored in this paper. The glasses are prepared by traditional melting method. The absorption spectra and the fluorescent lifetime (tau(f)) are measured at room temperature and low temperature (18 K). The stimulated cross-section (sigma(emi)) and potential laser properties (beta(min), I-sat, I-min) are calculated based on the absorption spectra. The absorption cross-section (sigma(abs)) are in the range 1.08 x 10(-20) - 1.18 x 10(-20) cm(2) in different glasses, the fluorescence lifetime (tau(f)) change from 1.9 to 1.2 ms with the increase of Yb3+ concentration. The potential laser properties indicate that lead silica glass is a good host for highly Yb ion doping glass. (c) 2005 Elsevier B.V. All rights reserved.