Harmonic Millimeter Wave Generation and Frequency Up-Conversion Using Optical Injection Locking and Brillouin Selective Sideband Amplification

Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f(LO) - 9 GHz) with single sideband (SSB) modulation and up-convert the 2GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.

MANY-BEAM SIMULATIONS AND OBSERVATIONS OF LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION IMAGING OF CRYSTAL DEFECTS

Many-beam dynamical simulations and observations have been made for large-angle convergent-beam electron diffraction (LACBED) imaging of crystal defects, such as stacking faults and dislocations. The simulations are based on a general matrix formulation of dynamical electron diffraction theory by Peng and Whelan, and the results are compared with experimental LACBED images of stacking faults and dislocations of Si angle crystals. Excellent agreement is achieved.

TRANSMISSION ELECTRON-MICROSCOPY STUDY OF N+-IMPLANTED SILICON ON INSULATOR BY ENERGY-FILTERED IMAGING

We report on the first study of N+ -implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing-Henry electron optical system as a spectrometer. The inelastic images, energy window set at DELTA-E = 16 eV and DELTA-E = 25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.

A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression

A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10~5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.

One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36μm

An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22μm-wide and 2mm-long epilayer-up bonded device.

Application of step-scan FTIR to the research of quantum cascade lasers

The principle of step-scan Fourier transform infrared （FTIR） spectroscopy is introduced. Double modulation step-scan FTIR technique is used to obtain the quantum cascade laser＇s stacked emission spectra in the time domain. Optical property and thermal accumulation of devices due to large drive current are analyzed.

Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

Room temperature operation is an important criterion for high performance of quantum cascade lasers. A strain-compensated quantum cascade laser（λ≈5.5μm） with optimized waveguide structure lasing at room temperature is reported. Accurate control of layer thickness and strain-compensated material composition is demonstrated using X-ray diffraction. An output power of at least 45mW per facet is realized for a 20μm-wide and 2mm-long laser at room temperature.

Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching

A diffractive microlens with a cascade focal plane along the main optical axis of the device is fabricated using a low-cost technique mainly including single mask ultraviolet (UV) photolithography and dual-step KOH:H2O etching. Based on the evolutionary behavior of converse pyramid-shaped microholes (CPSMs) preshaped over a {100}-oriented silicon wafer in KOH etchant, the first-step KOH etching is performed to transfer initial square micro-openings in a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD) and patterned by single mask UV-photolithography, into CPSMs with needed dimension. After completely removing a thinned SiO2 mask, basic annular phase steps with a relatively steep sidewall and scheduled height can be shaped in the overlapped etching region between the neighboring silicon concave-arc microstructures evolved from CPSMs through the second-step KOH etching. Morphological measurements demonstrate a desirable surface of the silicon microlens with a roughness in nanometer scale and the feature height of the phase steps formed in the submicrometer range. Conventional optics measurements of the plastic diffractive microlens obtained by further hot embossing the fine microrelief phase map over the nickel mask made through a common electrochemical method indicate a highly efficient cascaded focusing performance.