169 resultados para WAFER


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The molecular chain and lamellar crystal orientation in ultrathin films (thickness < 100 nm) of poly(di-n-hexylsilane) (PDHS) on silicon wafer substrates have been investigated by using transmission electronic microscopy, wide-angle X-ray diffraction, atomic force microscopy, and UV absorption spectroscopy. PDHS showed a film thickness-dependent molecular chain and lamellar crystal orientation. Lamellar crystals grew preferentially in flat-on orientation in the monolayer ultrathin films of PDHS, i.e., the silicon backbones were oriented along the surface-normal direction. By contrast, the orientation of lamellar crystals was preferentially edge-on in ultrathin films thicker than ca. 13 nm, i.e., the silicon backbones were oriented parallel to the substrate surface. We interpret the different orientations of molecular chain and lamellar crystal as due to the reduction of the entropy of the polymer chain near the substrate surface and the particularity of the crystallographic (001) plane of flat-on lamellae, respectively. A remarkable influence of the orientations of the silicon backbone on the UV absorption of these PDHS ultrathin films was observed due to the one-dimensional nature of sigma-electrons delocalized along the silicon backbone.

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The effects of solvent nature on the surface topographies of polystyrene (PS)/poly(methyl methacrylate) (PMMA) blend films spin-coated onto the silicon wafer were investigated. Four different solvents, such as ethylbenzene, toluene, tetrahydrofuran and dichloromethane, were chosen. They are better solvents for PS than that for PMMA. When dichloromethane, tetrahydrofuran and toluene were used, PMMA-rich phase domains protruded from the background of PS. When ethylbenzene was used, PS-rich phase domains elevated on the average height of PMMA-rich phase domains. In addition, continuous pits, networks and isolated droplets consisted of PS formed on the blend film surfaces with the decrease of polymer concentrations. The mechanism of the surface morphology evolution was discussed in detail.

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The surface morphology and crystallization behavior of a weakly segregated symmetric diblock copolymer, poly(styrene-b-6-caprolactone) (PS-b-PCL), in thin films were investigated by optical microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). When the samples were annealed in the molten state, surface-induced ordering, that is, relief structures with uniform thickness or droplets in the adsorbed monolayer, were observed depending on the annealing temperature. The polar PCL block preferred to wet the surface of a silicon wafer, while the PS block wet the air interface. This asymmetric wetting behavior led to the adsorbed monolayer with a PCL block layer having a thickness of around 4.0 nm. The crystallization of PCL blocks could overwhelm the microphase-separated structure because of the weak segregation. In situ observation of crystal growth indicated that the nucleation process preferred to occur at the edge of the thick parts of the film, that is, the relief structures or droplets. The crystal growth rate was presented by the time dependence of the distance between the tip of crystal clusters and the edge. At 22 and 17 degreesC, the average crystal growth rates were 55 +/- 10 and 18 +/- 4 nm/min, respectively.

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In this article we present a mechanical pattern transfer process where a thermosetting polymer mold instead of a metal, dielectric, ceramic, or semiconductor master made by conventional lithography was used as the master to pattern thermoplastic polymers in hot embossing lithography. The thermosetting polymer mold was fabricated by a soft lithography strategy, microtransfer molding. For comparison, the thermosetting polymer mold and the silicon wafer master were both used to imprint the thermoplastic polymer, polymethylmethacrylate. Replication of the thermosetting polymer mold and the silicon wafer master was of the same quality. This indicates that the thermosetting polymer mold could be used for thermoplastic polymer patterning in hot embossing lithography with high fidelity.