Surface planar ion chip for linear radio-frequency Paul traps

We propose a surface planar ion chip which forms a linear radio frequency Paul ion trap. The electrodes reside in the two planes of a chip, and the trap axis is located above the chip surface. Its electric field and potential distribution are similar to the standard linear radio frequency Paul ion trap. This ion trap geometry may be greatly meaningful for quantum information processing.

TWO-DIMENSIONAL ARRAY OF ION TRAPS ON A PLANAR CHIP

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.

Two-dimensional performance of uniform irradiation with the use of an edge-softened lens array and spectral dispersion

A lens array composed of edge-softened elements is used to improve on-target irradiation uniformity in the Shenguang II Laser Facility, with which a Fresnel pattern of suppressed diffraction peaks is obtained. Additional uniformity can be reached by reducing short-wavelength interference speckles inside the pattern when the technique of smoothing by spectral dispersion is also used. Two-dimensional performance of irradiation is simulated and the results indicate that a pattern of steeper edges and a flat top can be achieved with this joint technique. (c) 2007 Optical Society of America.

Magnetic field modulated direct overwrite with pulsed laser irradiation for TbFeCo magneto-optical disks

WE have designed a dual-beam magneto-optical (MO) storage system to test the dynamic storage properties of MO disks. The characteristics of this dual-beam system are demonstrated. Magnetic field modulated direct overwrite, which is a promising technique for highspeed MO storage, is realized on TbFeCo MO disks with this dual-beam MO system. The effect of light intensity, magnetic field intensity, and linear velocity of the disk and the modulating frequency variation on carrier-to-noise ratio is investigated. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.