Photonic crystal distributed feedback quantum cascade laser fabricated with holographic technique

Electrically pumped, edge-emitting, singlemode operation of a two-dimensional photonic crystal distributed feedback (PCDFB) quantum cascade laser emitting at similar to 7.8 mu m is demonstrated. The two-beam holographic technique combined with wet-etching process is successfully used to de. ne a square-lattice PCDFB structure on the top grating layer of the laser. This simple PC fabrication method may open exciting opportunities for the wide application of PCDFB lasers.

Pump-Suppressed Nondegenerate Four-Wave Mixing in a Highly Nonlinear Photonic Crystal Fiber Sagnac Loop

We propose a configuration for suppressing pumps in a broad- and flat-hand tunable nondegenerate four-wave mixing (FWM) wavelength converter. The signal and pumps are coupled into a highly nonlinear photonic crystal fiber symmetrical Sagnac loop. After the FWM wavelength conversion in the loop, the idler is separated from the pumps without a filter. In our experiment, a flat wavelength conversion bandwidth of 36 rim, conversion efficiency of-11 dB., pump-to-signal suppression ratio of 48 dB, and idler-to-pump suppression ratio of 15 dB are achieved.

Two-photon excited fluorescence from CdSe quantum dots on SiN photonic crystals

Two-photon excited fluorescence from CdSe quantum dots on a two-dimensional SiN photonic crystal surface is investigated by using a femtosecond laser. By using a photonic crystal, a 90-fold enhancement in the two-photon excited fluorescence in the vertical direction is achieved. This is the highest enhancement achieved so far in the two-photon excited fluorescence in the vertical direction. The mechanism of the enhancement for two-photon excited fluorescence from quantum dots on photonic crystals is analyzed.

Fabrication of high quality two-dimensional photonic crystal mask layer patterns

This work discusses the fabrication of two-dimensional photonic crystal mask layer patterns. Photonic crystal patterns having holes with smooth and straight sidewalls are achieved by optimizing electron beam exposure doses during electron beam lithography process. Thereafter, to precisely transfer the patterns from the beam resist to the SiO2 mask layer, we developed a pulse-time etching method and optimize various reaction ion etching conditions. Results show that we can obtain high quality two-dimensional photonic crystal mask layer patterns.

Tunable edge-emitting microlaser on photonic crystal slab

A tunable edge-emitting microlaser is realised by a chirped line-defect photonic crystal waveguide. A tunable range of 57 nm is obtained experimentally.

Whispering-gallery microcavity semiconductor lasers suitable for photonic integrated circuits and optical interconnects

The characteristics of whispering-gallery-like modes in the equilateral triangle and square microresonators are introduced, including directional emission triangle and square microlasers connected to an output waveguide. We propose a photonic interconnect scheme by connecting two directional emission microlasers with an optical waveguide on silicon integrated circuit chip. The measurement indicates that the triangle microlasers can work as a resonance enhanced photodetector for optical interconnect.

All-optical continuously tunable delay with a high linear-chirp-rate fiber Bragg grating based on four-wave mixing in a highly-nonlinear photonic crystal fiber

A scheme for hi-fi all-optical continuously tunable delay is proposed. The signal wavelength is converted to a desired idler wavelength and converted back after being delayed by a high linear-chirp-rate (HLCR) fiber Bragg grating (FBG) based on four-wave mixing (FWM) in a highly-nonlinear photonic crystal fiber (HN-PCF). In our experiment, 400 ps (more than 8 full width of half maximum, FWHM) tunable delay is achieved for a 10 GHz clock pulse with relative pulse width broaden ratio (RPWBR) of 2.08%. The power penalty is only 0.3 dB at 10(-9) BER for a 10 Gb/s 2(31)-1 pseudo random bit sequence (PRBS) data. (c) 2009 Elsevier B.V. All rights reserved.

Light extraction of GaN LEDs with 2-D photonic crystal structure

Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structure on the top surface of GaN-based light emitting diode (LED). PC patterns are transferred to 460-nm-thick transparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7 degrees, which means that the light extraction efficiency is enhanced outstandingly.

Holographic fabricated photonic-crystal distributed-feedback quantum cascade laser with near-diffraction-limited beam quality

We demonstrate the fabrication and characterization of photonic-crystal distributed-feedback quantum cascade laser emitting at 4.7 mu m. The tilted rectangular-lattice PCDFB structure was defined using a multi-exposure of two-beam holographic lithography. The devices exhibit the near-diffraction-limited beam emission with the full width at half maximum of the far-field divergence angles about 4.5 degrees and 2.5 degrees for stripe widths of 55 mu m and 95 mu m, respectively. Single-mode emission with a side mode suppression ratio of approximate to 20 dB is achieved in the temperature range (80-210 K). The single-facet output power is above 1 W for a 95 mu m x 2.5 mm laser bar at 85 K in pulsed operation. (C) 2009 Optical Society of America

Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide: erratum

An erratum is presented to correct the calculation of the filtering bandwidth of the micro-ring resonator. (C) 2009 Optical Society of America

InP Based PD/EAM Integrated Photonic Switch

A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20 nm at 2.5 Gbit/s with a low input optical power of about 20 mW.

Photonic band structures of two-dimensional photonic crystals with deformed lattices

Using the plane-wave expansion method, we have calculated and analysed the changes of photonic band structures arising from two kinds of deformed lattices, including the stretching and shrinking of lattices. The square lattice with square air holes and the triangular lattice with circular air holes are both studied. Calculated results show that the change of lattice size in some special ranges can enlarge the band gap, which depends strongly on the filling factor of air holes in photonic crystals; and besides, the asymmetric band edges will appear with the broken symmetry of lattices.

Characteristics of band structures in 1D photonic crystals containing alternate left-right handed materials

This work investigated analytically the band structure of photonic crystals (PCs) with alternate layers of left and right-handed materials in one-dimension. It was found that, under certain conditions, new peculiar band structures not seen in all right-handed material PCs appeared. We transformed the analytic dispersion relation into two cosine terms, and obtained an interesting band structure using the new form of dispersion equation. Conditions for obtaining such peculiar band structure were given. (c) 2005 Elsevier Ltd. All rights reserved.

Photonic crystal point-shift nanolaser with ultimate small modal volume

A photonic crystal nanolaser consisting of only the shift of two lattice points was fabricated by HJ/Xe inductively coupled plasma etching. The room temperature lasing was observed by photopumping. The three-dimensional finite-difference time-domain calculation showed that the lasing mode has small modal volume close to (lambda/2n)(3).

A method to estimate the strain state of SiGe/Si by measuring the bandgap

sing the result of model-solid theory, we have obtained the relationship between bandgap and strain of Si1-x Ge-x alloy on Si (100) substrate with x < 0.85. It was shown that the deviation between the bandgap of strained SiGe and relaxed SiGe is proportional to the strain. According to the theoretical result, a novel method was suggested to determine the strain state of SiGe/ Si through measuring the bandgap. The strain in the SiGe/Si multi-quantum wells was measured using the new method and the results had good agreement with that from XRD measurement.