Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures

Micromachined comb-drive electrostatic resonators with folded-cantilever beams were designed and fabricated. A combination of Rayleigh＇s method and finite-element analysis was used to calculate the resonant frequency drift as we adjusted the device geometry and material parameters. Three micromachined lateral resonant resonators with different beam widths were fabricated. Their resonant frequencies were experimentally measured to be 64.5,147.2, and 255.5kHz, respectively, which are in good agreement with the simulated resonant frequency. It is shown that an improved frequency performance could be obtained on the poly 3C-SiC based device structural material systems with high Young＇s modulus.

An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing

An integratable distributed Bragg reflector laser is fabricated by low-energy ion implantation induced quantum well intermixing. A 4.6nm quasi-continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.

O2在FeSi（100）表面的初始吸附研究

于2010-11-23批量导入

Design of spectrometer based on volume phase grating for near infrared range

In order to design and fabricate a spectrometer for the infrared range widely used in the different applications, Volume Phase Grating (VPG) with. low Polarization Dependence Loss (PDL) and high efficiency has been adopted as the dispersion element. VPG is constructed by coating an optical substrate with a thin film of dichromated. gelatin and exposing the film to two mutually coherent laser beams to form index modulation. The diffraction efficiency for a VPG is governed by Bragg effects. The depth (d) and index modulation contrast of the grating structure control the efficiency at which the light is diffracted when the Bragg condition is satisfied. Gradient index lens with high performance and low aberration are used as collimating system instead of standard lens. The spot diagrams and MTF curve of the collimating lens are shown in the paper. The receive system is InCaAs photodiode (PD) array including 512 pixels with 25 mum pitch. The spectrum resolution of the spectrometer reaches to 0.2nm and wavelength accuracy is 40pm.

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

辽东次生林土壤呼吸及主要组分分离与量化

土壤呼吸是森林生态系统碳循环的重要组成部分，对土壤呼吸的主要组分根系呼吸和土壤微生物呼吸进行分离并量化，对于了解土壤碳释放规律、估算生态系统土壤碳的年际通量以及预测气候变化条件下根系或土壤微生物对土壤碳释放格局的影响具有重要意义。本文采用挖壕法测定辽东山区蒙古栎林、杂木林和胡桃楸林的土壤表面CO2通量，并同步分析土壤水热因子及土壤有机质、N含量、根系生物量、土壤酶活性、土壤微生物生物量等。研究结果表明：（1）辽东山区次生林0-10cm土壤有机质含量为9.29-18.15%，全氮含量为0.43-0.90%，pH值为5.67-6.19；次生林生长季细根生物量平均为152.61- 447.79 g/m2，粗根生物量平均为255.42-507.42 g/m2，根系总量平均为540.93-955.22 g/m2；土壤酶活性季节变化明显，且具垂直分布特征，蒙古栎林的土壤转化酶、淀粉酶和脱氢酶活性最高，胡桃楸林最低，胡桃楸林过氧化氢酶活性相对最大；土壤微生物量碳、氮的季节变化呈明显的单峰曲线并与土壤温度相关，土壤微生物量碳氮之间具显著相关性（P<0.05）。（2）次生林土壤总呼吸、根呼吸和土壤微生物呼吸具明显的日、季变化规律，生长季根呼吸贡献相对较低，胡桃楸林根呼吸贡献率为34.0-34.8%，蒙古栎林为17.9-28.4%，杂木林为14.7-35.3%；土壤微生物呼吸贡献率为66.0-85.3%，高于根呼吸贡献率，说明辽东山区次生林土壤微生物呼吸决定土壤总呼吸的变化趋势。（3）土壤呼吸与地下5cm土壤温度呈指数函数关系，土壤总呼吸的Q10值为1.29-2.30，微生物呼吸的Q10值为1.28-2.09，根呼吸的Q10值为1.29-3.72；土壤总呼吸、微生物呼吸、根呼吸与土壤含水量均无明显相关关系；蒙古栎林根呼吸与细根生物量显著相关，杂木林根呼吸与粗根生物量及根系总生物量显著相关，胡桃楸林根呼吸与根系生物量总量显著相关（P<0.05）；微生物呼吸与淀粉酶、转化酶、脱氢酶、过氧化氢酶均无显著相关性（除胡桃楸林与过氧化氢酶显著相关）；微生物呼吸与土壤微生物量碳、氮均呈显著线性相关关系（P<0.05）。（4）蒙古栎林土壤总呼吸、根呼吸、土壤微生物呼吸年际碳释放量分别为572.78、147.78和425.59 g C m-2a-1，杂木林分别为403.12、108.92、297.51 g C m-2a-1，胡桃楸林分别为519.47、173.75、345.72 g C m-2a-1；生长季和非生长季通过根呼吸释放的碳量均小于分解土壤有机质的微生物呼吸释放的碳量，非生长季次生林土壤碳释放量为39.21-152.04 g C m-2a-1，占全年呼吸总量的10-29%，说明冬季土壤碳释放量不能忽略。