阵列光栅压缩器的空域特性

引入角度偏差、位移偏差作为拼接光栅系统的物理参数，定义了拼接光栅的孔径函数，利用傅里叶角谱理论研究了高斯脉冲入射拼接光栅压缩器后的远场分布特性。研究表明；出射脉冲仍然是高斯型脉冲，但包络中心发生偏移，偏移量由角度偏差量和光束口径决定；位移偏差引入的相位随着拼接光栅压缩器传递，其对远场焦斑的影响，取决于每片子光栅的非整数倍光栅常数的横向位移偏差和纵向位移偏差的综合作用。通过数值计算得到了各维偏差对阵列光栅压缩器空域特性的影响，计算表明：光栅面外角度偏差（俯仰左右）和条纹平行度偏差都必须控制在1μrad以内，

高功率激光装置光束准直系统新型远场监测技术

利用高功率激光装置空间滤波器小孔成像和取样光栅的衍射,设计出一套新型光路远场监测方案,并且在实验平台上进行了实验验证.实验结果表明:相对传统的远场监测方法,该远场监测系统通过侧面离轴光栅取样灵活利用空间,其调整平均误差为空间滤波器小孔直径0.9%,能够满足准直系统远场调整精度(<小孔直径5%)的要求.

光谱色散后的相位调制光束衍射特性研究

用数值方法研究了激光驱动器系统中使用光谱色散平滑单元后光束的衍射特性、模拟结果表明，光谱色散会使光束衍射光斑变大，近场空间强度均匀性改善，而远场光斑内部存在光强接近于均匀分布的区域．进一步分析了光谱色散平滑单元中相位调制器的调制深度、调制频率及光栅色散系数等主要元件参数对光束传输特性的影响，发现在一定情况下光斑内部会出现较强的强度调制。

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of fermosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. (C) 2004 Elsevier B.V. All rights reserved.

Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

Write-once medium with Fe-Doped BiOx thin films for blue laser recording

Fe:BiOx films are fabricated on K9 glass substrates by rf-magnetron sputtering of a BiFeO target under argon atmosphere with increasing sputtering power from 80 to 200 W at room temperature. It is found that the thin films grown at the sputtering power of 160W can be formed at an appropriate deposition rate and have an improved surface morphology. The XPS result reveals that the films investigated are comprised of Bi, Fe and O elements. A typical XRD pattern shows that no phase transition occurs in the films up to 400 degrees C. The results of the blue laser recording test demonstrate that the Fe:BiOx films have good writing sensitivity for blue laser beam (406.7 nm) and good stability after reading 10000 times. The recording marks of 200nm or less are obtained. These results indicate that the introduction of Fe into BiOx films can reduce the mark size and improve the stability of the films.

Super-resolution scanning laser microscopy with a third-order optical nonlinear thin film

In a configuration of optical far-field scanning microscopy, super-resolution achieved by inserting a third-order optical nonlinear thin film is demonstrated and analyzed in terms of the frequency response function. Without the thin film the microscopy is diffraction limited; thus, subwavelength features cannot be resolved. With the nonlinear thin film inserted, the resolution is dramatically improved and thus the microscopy resolves features significantly smaller than the smallest spacing allowed by the diffraction limit. A theoretical model is established and the device is analyzed for the frequency response function. The results show that the frequency response function exceeds the cutoff spatial frequency of the microscopy defined by the laser wavelength and the numerical aperture of the convergent lens. The main contribution to the improvement of the cutoff spatial frequency is from the phase change induced by the complex transmission of the nonlinear thin film. Experimental results are presented and are shown to be consistent with the results of theoretical simulations.

边缘泵浦被动调Q的Nd：YAG薄片激光器

文中报道了一台采用激光二极管部分边缘泵浦方式的高功率薄片激光器，晶体尺寸是1 mm×10 mm×60 mm。Cr4+：YAG被用来作为被动调Q晶体，在重复频率高于10kHz时，获得了脉宽10ns，平均功率70W，斜线效率为36\%的激光输出。通过控制泵浦光束直径的大小，我们在厚度方向得到了近似衍射极限的光束输出。整个激光器结构紧凑，大小为60 mm×174 mm×150 mm。