多模光纤激光器实现高功率低阶模输出

采用光纤缠绕的方法，来抑制大模场面积（LMA）双包层光纤激光器中的高阶模振荡。将光纤缠绕至两种不同半径，实验测量了相应条件下激光器的输出功率和光束质量因子M2。缠绕半径为165mm时，输出功率为217W，M2为2.96；缠绕半径为52mm时，输出功率为160W，M2为1.38。光纤激光器相应的斜率效率分别为60％和48％。光纤缠绕半径较小时，虽然激光器输出功率减小，但其亮度是大缠绕半径时对应值的3.4倍。

先进光纤激光技术

高光束质量、高峰值功率、小型化的短脉冲激光系统在激光雷达、光谱学、精密探测等领域有非常广泛的应用。在脉冲光纤激光器方面,针对调Q双包层光纤激光、脉冲调制LD技术及其多级光纤级联放大系统、基于调Q固体激光器的全光纤型MOPA系统进行了详细的理论分析和实验研究,研制出了全光纤化的脉冲光纤激光器。这些工作为全光纤化脉冲光纤激光器的研制和推广奠定了基础。

千瓦级双包层光纤激光器冷却方案设计理论和实验研究

尽管双包层光纤激光器的散热性能好于传统的固体激光器的散热性能,光纤激光器中的热沉积仍然是限制提高其输出功率的重要因素.以双端抽运的400W双包层光纤激光器为实例,定量分析了光纤内的热沉积分布.根据所建立的散热模型,为了确保千瓦级双包层光纤激光器安全稳定的运行,抽运端附近的对流换热系数应大于2.8×10-2W·cm-2K-1.据此设计出高功率双包层光纤激光器抽运端冷却装置并成功应用在激光系统中,获得了千瓦级的激光输出.

激光多普勒振动计用于水下声光通信

介绍了激光多普勒振动计(LDV)用于水下声光通信的应用背景,阐述了激光多普勒振动计的工作原理和两种相干检测方式。采用零差的相干探测方式,设计并实现了一套光纤结构的激光多普勒振动计。为了证明系统能够应用于水下声光通信,进行了对水下声源发出的声波频率和强度的探测实验。通过对实验数据的分析得出：第一,系统能够检测出水下声源发出的声波频率,对7 kHz附近的10个声波频率的测量标准偏差小于8 Hz; 第二,系统探测信号强度与水下声源发声的声压级成指数关系,对于水下目标通信所用的3.5 kHz和7 kHz声波频段的

氟磷酸盐玻璃的应用研究进展

氟磷酸盐玻璃系统南于其特殊的光学性能和优良的机做与热学性能一直是特种光学玻璃材料领域的一个研究热点。总结了氟磷酸盐玻璃的分类及玻璃组分与其结构的关系，综述了氟磷玻璃在光学器件、高能高功率激光玻璃、光纤激光器、光纤放大器及上转换发光基质材料等领域上的应用，并对其未来的发展进行了展望。

掺铒碲酸盐玻璃中的浓度猝灭机理研究

测试了掺铒碲酸盐玻璃在不同掺杂浓度下的荧光特性．根据Dexter能量转移理论计算了Er^3+在碲酸盐玻璃中发生浓度猝灭的临界距离R0及Er^3+间相互作用参数CEr-Er，并与其他基质玻璃中CEr-Er数值进行了比较．最后建立了Er^3+基于OH^-作为猝灭中心下碲酸盐玻璃中的浓度猝灭模型．

掺铒钙铝硅玻璃的光学带隙

玻璃中稀土掺杂的离子的光谱性质受其周围的玻璃结构和在玻璃基质中的分布影响很大。利用熔融法制备了组分为9SiO2·26Al2O3·65CaO·1．0Er2O3·0．3Yb2O3和分别加入MgO以及La2O3的掺铒钙铝硅玻璃，并研究了其吸收边和光学带隙。计算得出离子填充比随玻璃的平均摩尔质量的增大而减小，同时利用Judd—Ofelt模型计算出该玻璃体系的Ω2，Ω4和Ω6参数，并进行了分析。随着MgO或La2O3的加入，吸收边向短波长移动，光学带隙增大，同时Ω2和Ω6值也增大。对ln（α）和hω的曲线进行线性拟

掺钕材料激光终态能级寿命测量

介绍了目前测量掺钕材料激光终态能级寿命的三种方法，通过对三种测量方法比较，采用间接法测量激光终态能级寿命相对简单易行。

杂质对掺钕磷酸盐激光玻璃光谱性质的影响

综述了过渡金属杂质（Cu，Fe）和稀土杂质（Dy，Pr，Sm，Ce）对掺钕磷酸盐激光玻璃吸收损耗及Nd^3＋荧光猝灭影响的研究状况。

光子晶体光纤的研究新进展

综述了光子晶体光纤（PCF）不同于传统光纤的各种性质，并详细讨论了光子晶体光纤在通信和光纤激光等领域的新发展。

荧光俘获效应对掺铒氧化物玻璃光谱性质的影响

测试了不同掺杂浓度和样品厚度下掺铒磷酸盐和碲酸盐玻璃的吸收光谱、荧光光谱和荧光寿命，计算了Er^3＋离子在1．53μm处的吸收截面（σa）、发射截面（σe）、自发辐射跃迁概率（Arad）、辐射跃迁寿命（τrad）、以及辐射跃迁量子效率（η）等光谱参数．讨论了荧光俘获效应对掺铒磷酸盐和碲酸盐玻璃光谱性质及光谱参数的影响．结果表明即使在铒离子低掺杂浓度（0．1mol％Er2O3）下，荧光俘获效应也普遍存在于掺铒玻璃材料中，使得荧光寿命（τt）和荧光半高宽（FWHM）随样品的厚度和铒离子掺杂浓度增加而增大，导致

Property studies of optical waveguide formed by 6.0 MeV carbon ion implantation into Nd : silicate glass

Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.

在光子晶体光纤中实现波长调谐飞秒孤子脉冲输出

介绍了在光子晶体光纤中产生波长调谐飞秒光孤子脉冲的机理及研究进展，并对波长调谐飞秒孤子激光系统进行了分析和比较。

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degrees C is needed to optically activate Er3+ which may be the main obstacle to impede the application of Er-doped silicon nitride.