Dual-wavelength photochromic fulgides for parallel recording memory

Two photochromic fulgides, 2-{2-[4-(N,N-dimethylnilino)-5-methyl-4-oxazoly]}ethylidene-4-(1-methylethylidene) tetrahydrofuran-2,5-dione (A) and 3-(1,2-dimethyl-5-phenyl-3-pyrolloethylidene)-4-(1-methylethylidene)tetrahydrofuran-2,5-dione (B), doped in PMMA as candidates of dual-wavelength optical memory for parallel recording has been investigated. With 488 nm-laser and 650 nm-laser, both "cross" and "star" images are recorded on the fulgides-PMMA film and read out clearly, respectively. Crosstalk between two fulgides in PMMA matrix and nondestructive readout has also been explored. The results show that no significant cross-talk is detected between them, and nondestructive readout is up to 201 times. (C) 2005 Elsevier B.V. All rights reserved.

Z-scan theory based on a diffraction model

Based on Fresnel-Mrchhoff diffraction theory, a diffraction model of nonlinear optical media interacting with a Gaussian beam has been set up that can interpret the Z-scan phenomenon in a new way. This theory not only is consistent with the conventional Z-scan theory for a small nonlinear phase shift but also can be used for larger nonlinear phase shifts. Numerical computations indicate that the shape of the Z-scan curve is greatly affected by the value of the nonlinear phase shift. The symmetric dispersionlike Z-scan curve is valid only for small nonlinear p base shifts (\Deltaphi(0)\ < pi), but, with increasingly larger nonlinear phase shifts, the valley of the transmittance is severely suppressed and the peak is greatly enhanced. The power output through the aperture will oscillate with increasing nonlinear phase shift caused by the input laser power. The aperture transmittance will attenuate and saturate with increasing Kerr constant. (C) 2003 Optical Society of America.

Environmentally stable ytterbium figure-of-eight fiber laser producing 177-fs pulses

Pulses of 177 fs and 1035 nm, with average power of 1.2 mW, have been generated directly from a passively mode-locked Yb-doped figure-of-eight fiber laser, with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. To our knowledge, these are the shortest pulses ever to come from a passively mode-locked Yb-doped figure-of-eight fiber laser. This represents a 5-fold reduction in pulse duration compared with that of previously reported passively mode-locked Yb-doped figure-of-eight fiber lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0 MHz. (c) 2007 Elsevier B.V. All rights reserved.

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

Experimental study on tunable external cavity photodetectors

In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.