Comparative investigation of up-conversion luminescence in Tm3+-doped oxide-chloride germanate and tellurite glasses

Tm3+-doped oxide-chloride germanate and tellurite glasses have been synthesized by conventional melting method. Intense up-conversion luminescence emissions were simultaneously observed at room temperature in these glasses. The possible up-conversion mechanisms are discussed and estimated. However, in these Tm3+-doped glasses, tellurite glass showed weaker up-conversion emissions than germanate glass, which is inconsistent with the prediction from the difference of maximum phonon energy between tellurite and germanate glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Our results confirm that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. (c) 2005 Elsevier Ltd. All rights reserved.

Up-conversion luminescence analysis in ytterbium-sensitized erbium-doped oxide-halide tellurite and germanate-niobic-lead glasses

Ytterbium-sensitized erbium-doped oxide-halide tellurite and germanate-niobic-lead glasses have been synthesized by conventional melting method. Intense green and red emissions centered at 525, 546 and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2), respectively, were simultaneously observed at room temperature in these glasses. The quadratic dependence of the 525, 546 and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs. Tellurite glass showed a weaker up-conversion emission than germanate-niobic-lead glass, which is inconsistent with the prediction from the difference of maximum phonon energy between tellurite and germanate-mobic-lead glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. Our results reveal that the phonon density and the maximum phonon energy of host glasses are both important factors in determining the up-conversion efficiency. (c) 2005 Elsevier B.V. All rights reserved.

Investigation of the spectroscopic properties of Yb3+-doped yttrium lanthanum oxide transparent ceramic

Spectroscopic properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic were studied. Two main absorption peaks of the specimen are centered at 940 and 970 nm, which are suitable for InGaAs laser diode pumping. The main emission peaks were located at 1032 and 1075 nm with larger emission cross-section and longer fluorescence lifetime than those of Yb:Y2O3. These properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic are favorable to achieve high efficiency and high power laser output. (c) 2007 Elsevier B.V. All rights reserved.

Cooperative up-conversion luminescence of ytterbium doped yttrium lanthanum oxide transparent ceramic

The up-conversion luminescence of Yb3+-doped yttriurn lanthanum oxide transparent ceramic was investigated. It was ascribed to cooperative luminescence originated from the coupled states of the Yb3+ ion pairs. The proper doping of La2O3 can remove the cooperative luminescence of Yb3+ ion. But excessive La2O3 (at least 10 at.%) the cooperative up-conversion of Yb3+:Y2O3 is obtained again, and the intensity of up-conversion luminescence strengthens with the increase of La2O3 content. (c) 2007 Elsevier B.V. All rights reserved.

Fabrication and spectral properties of Nd3+-doped yttrium lanthanum oxide transparent ceramics

Transparent 1 at% Nd3+:Y1.9La0.1O3 ceramics were fabricated with nanopowders prepared by carbonate coprecipitation method. The powder compacts were sintered in H-2 atmosphere at 1550 degrees C for 30 h. The Nd3+:Y1.9La0.1O3 ceramics display uniform grains of about 50 mu m and high transparency. The highest transmittance of the ceramics reaches 67%. The strongest absorption peak is in the wavelength of 820 nm with absorption cross section of 2.48 x 10(-20) cm(2). The absorption is still high at LD wavelength 806 nm with absorption cross section of 1.78 x 10(-20) cm(2) and broad full width at half maximum (FWHM) of about 6.3 nm. The strongest emission peak was centered at 1078 nm with large stimulated emission cross section of 9.63 x 10(-20) cm(2) and broad FWHM of about 7.8 nm. The broad absorption and emission bandwidth of Nd3+:y(1.9)La(0.1)O(3) transparent ceramics are favorable to achieve the miniaturized LD pumping apparatus and ultrashort modelocked pulse laser output, respectively. (c) 2007 Elsevier B.V. All rights reserved.

Luminescence behavior of Yb(3+)heavy-doped yttrium lanthanum oxide transparent ceramics

Yb3+ heavy-doped yttrium lanthanum oxide transparent ceramics were fabricated and their spectroscopic properties were investigated. The absorption bands of (YbxY0.9-xLa0.1)(2)O-3 (x = 0.05-0.15) ceramics are broad at wavelength of 900-1000 nm. The absorption cross-sections centered at 974 nm and the emission cross-sections at 1031 nm of Yb3+ ion are 0.89-1.12 x 10(-20) cm(2) and 1.05 x 10(-20) cm(2) respectively. The up-conversion luminescence intensity of Yb3+-doped yttrium lanthanum oxide ceramics increased firstly, then decreased with the increase of Yb3+ ion content. (C) 2008 Elsevier B.V. All rights reserved.

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution

Monodispersed ZnS and Eu3+-doped ZnS nanocrystals have been prepared through the co-precipitation reaction of inorganic precursors ZnCl2, EuCl3, and Na2S in a water/methanol binary solution. The mean particle sizes are about 3-5 nm. The structures of the as-prepared ZnS nanoparticles are cubic (zinc blende) as demonstrated by an x-ray powder diffraction. Photoluminescence studies showed a stable room temperature emission in the visible spectrum region for all the samples, with a broadening in the emission band and, in particular, a partially overlapped twin peak in the Eu3+-doped ZnS nanocrystals. The experimental results also indicated that Eu3+-doped ZnS nanocrystals, prepared by controlling synthetic conditions, were stable. (C) 2002 American Institute of Physics.

Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes

By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.

Electrochemiluminescence-based DNA detection using guanine oxidation at electrostatic self-assembly of Ru(bpy)(3)(2+)-doped silica nanoparticles on indium tin oxide electrode

A Ru(bpy)(3)(2+)-doped silica nanoparticle-[Ru@Silica] modified indium tin oxide electrode was prepared by simple electrostatic self-assembly technique, and one-electron catalytic oxidation of guanine bases in double-strand and denatured DNA was realized using the electrochemiluminescence detection means.

Tris(2,2 '-bipyridyl) ruthenium(II) doped silica film modified indium tin oxide electrode and its electrochemiluminescent properties

An approach was reported to synthesize silica hybridized ruthenium bipyridyl complex through amidation reaction by covalent attachment of bis(bipyridyl)-4,4'-dicarboxy-2,2'-bipyridyl-ruthenium to (3-aminopropyl)-triethoxysilane. The hybrid complex then was gelatinized through acid catalytic hydrolysis method and a sol-gel modified indium, tin oxide electrode was prepared via spin coating technique. As prepared indium tin oxide electrode possesses good stability therein with excellent electrochemiluminescence behavior.