A wide-band front-end for terrestrial and cable receptions

In this paper, a wide-band low noise amplifier, two mixers and a VCO with its buffers implemented in 50GHz 0.35 mu m SiGe BiCMOS technology for dual-conversion digital TV tuner front-end is presented. The LNA and up-converting mixer utilizes current injection technology to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure of the LNA is less than 5dB and its 1dB compression point is -2 dBm. The IIP3 of two mixers is 25-dBm. The measurement results show that the VCO has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole chip consume 253mW power with 5-V supply.

Simulation of a monolithically integrated CMOS bioamplifier for EEG recordings

A monolithically integrated CMOS bioamplifier is presented in this paper for EEG recording applications. The capacitive-coupled circuit input structure is utilized to eliminate the large and random DC offsets existing in the electrode-tissue interface. Diode-connected NMOS transistors with negative voltage between gate and source are candidates for large resistors necessary to the bioamplifier. A passive BEF (Band Eliminator Filter) can reduce 50 Hz noise disturbance strength by more than 60 dB. A novel analysis approach is given to help determine the noise power spectral density. Simulation results show that the two-stage CMOS bioamplifier in a closed-loop capacitive feedback configuration,provides an AC in-band gain of 39.6 dB, a DC gain of zero, and an input-referred noise of 87 nVrms integrated from 0.01 Hz to 100 Hz.

A CMOS front-end circuit for SONET OC-96 receiver

An optical receiver front-end for SONET OC-96 receivers was analyzed and designed in 0.18 mu m CMOS process. It consists of a transimpedance amplifier (TIA) and a limiting amplifier (LA). The TIA takes a fully differential configuration, and regulated cascode (RGC) input stage is implemented. The LA was realized by five cascaded identical gain stages with active inductor load. The TIA achieved 4.2GHz bandwidth for 0.5pF photodiode (PD) capacitance and 1.2k 0 transimpedance gain. The LA achieved 5.4GHz bandwidth and 29dB voltage gain. The optical sensitivity is -19dBm at 5-Gb/s for a bit-error rate of 10(-12), and it dissipates 45.5mW for I.8V supply.

A simulation model of body contact structure in PD SOI analogue circuit

As a solution of accurate simulation of the body effect in PD SOI analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. Based on this model, we have designed and simulated a sense amplifier that applied to V a 0.8um PD SOI 64K SRAM.

Modeling and optimizing of high-concentration erbium-doped fiber amplifiers with consideration of ion-clusters

Starting from the modeling of isolated ions and ion-clusters, a closed form rate and power evolution equations for high-concentration erbium-doped fiber amplifiers are constructed. Based on the equations, the effects of the fraction of ion-clusters in total ions and the number of ions per cluster on the performance of high-concentration erbium-doped fiber amplifiers are analyzed numerically. The results show that the presence of the ion-clusters deteriorates amplifier performance, such as the signal power, signal gain, the threshold pump power for zero gain, saturated signal gain, and the maximum gain efficiency, etc. The optimum fiber length or other parameters should be modified with the ion-clusters being taken into account for the amplifiers to achieve a better performance. (c) 2007 Elsevier B.V. All rights reserved.

Fast and effective analysis methods for fiber Raman amplifiers

A series of new single-step methods and their corresponding algorithms with automatic step size adjustment for model equations of fiber Raman amplifiers are proposed and compared in this paper. On the basis of the Newton-Raphson method, multiple shooting algorithms for the two-point boundary value problems involved in solving Raman amplifier propagation equations are constructed. A verified example shows that, compared with the traditional Runge-Kutta methods, the proposed methods can increase the accuracy by more than two orders of magnitude under the same conditions. The simulations for Raman amplifier propagation equations demonstrate that our methods can increase the computing speed by more than 5 times, extend the step size significantly, and improve the stability in comparison with the Dormand-Prince method. The numerical results show that the combination of the multiple shooting algorithms and the proposed methods has the capacity to rapidly and effectively solve the model equations of multipump Raman amplifiers under various conditions such as co-, counter- and bi-directionally pumped schemes, as well as dual-order pumped schemes.

Experimental and theoretical analysis of nondegenerate ultrabroadband chirped pulse optical parametric amplification

Experimental investigations of nondegenerate ultrabroadband chirped pulse optical parametric amplification have been carried out. The general mathematical expressions for evaluating parametric bandwidth, gain and gain bandwidth for arbitrary three-wave mixing parametric amplifiers are presented. In our experiments, a type-I noncollinear phase-matched optical parametric amplifier based on lithium triborate, which was pumped by a 5-ns second harmonic pulses from a Q-switched Nd:YAG operating at 10 Hz, seeded by a 14-fs Ti:sapphire laser at 800 nm, was presented. The 0.85 nJ energy of input chirped signal pulse with 57-FWHM has been amplified to 3.1 muJ at pump intensity 3 GW/cm(2), the corresponding parametric gain reached 3.6 x 10(3), the 53 nm-FWHM gain spectrum bandwidth of output signal has been obtained. The large gain and broad gain bandwidth, which have been confirmed experimentally, provide great potentials to amplify efficiently the broad bandwidth femtosecond light pulses to generate new extremes in power, intensity, and pulse duration using optical parametric chirped pulse amplifiers pumped by powerful nanosecond systems.

Non-collinear CPOPA seeded by an Yb3+-doped self-starting passive mode-locked fiber laser

Using a home-made seed at 1053 nm from a Yb3+-doped passively mode-locked fiber laser of 1.5 nJ/pulse, 362 ps pulse duration with a repetition rate of 3.842 MHz, a compact, low cost, stable and excellent beam quality non-collinear chirped pulse optical parametric amplifier omitting the bulky pulse stretcher has been demonstrated. A gain higher than 4.0 x 10(6), single pulse energy exceeding 6 mJ with fluctuations less than 2% rms, 14 nm amplified signal spectrum and recompressed pulse duration of 525 fs are achieved. This provides a novel and simple amplification scheme. (c) 2007 Optical Society of America.

Eye-safe, high-energy, single-mode all-fiber laser with widely tunable repetition rate

We present a novel high-energy, single-mode, all-fiber-based master-oscillator-power-amplifier (MOPA) laser system operating in the C-band with 3.3-ns pulses and a very widely tunable repetition rate, ranging from 30 kHz to 50 MHz. The laser with a maximum pulse energy of 25 mu J and a repetition rate of 30 kHz is obtained at, a wavelength of 1548 nm by using a double-clad, single-mode, Er:Yb co-doped fiber power amplifier.

SOA-based polarity-preserving all-optical wavelength conversion at 80Gbit/s: Wide conversion range, well dynamic characteristics and polarization insensitive

This letter presents the effective design of a tunable 80 Gbit/s wavelength converter with a simple configuration consisting of a single semiconductor optical amplifier (SOA) and an optical bandpass filter (OBPF). Based on both cross-gain and cross-phase modulation in SOA, the polarity-preserved, ultrafast wavelength conversion is achieved by appropriately filtering the blue-chirped spectral component of a probe light. Moreover, the experiments are carried out to investigate into the wavelength tunability and the maximum tuning range of the designed wavelength converter. Our results show that a wide wavelength conversion range of nearly 35 nm is achieved with 21-nm downconversion and 14-nm upconversion, which is substantially limited by the operation wavelength ranges of a tunable OBPF and a tunable continuous-wave laser in our experiment. We also exploited the dynamics characteristics of the wavelength converter with variable input powers and different injection current of SOA. (C) 2008 Wiley Periodicals, Inc.

40-GHz wavelength tunable mode-locked SOA-based fiber laser with 40-nm tuning range

A 40-GHz wavelength tunable mode-locked fiber ring laser based oil cross-gain modulation in a semiconductor optical amplifier (SOA) is presented. Pulse trains with a pulse width of 10.5 ps at 40-GHz repetition frequency are obtained. The laser operates with almost 40-nm tuning range. The relationship between the key laser parameters and the output pulse characteristics is analyzed experimentally.

SOA-based actively mode-locked fiber ring laser by forward injecting an external pulse train

An actively mode-locked fiber ring laser based on cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA) is demonstrated to operate stably with a simple configuration. By forward injecting an easily-generated external pulse train, the mode-locked fiber laser can generate an optical-pulse sequence with pulsewidth about 6 ps and average output power about 7.9 mW. The output pulses show an ultra-low RMS jitter about 70.7 fs measured by a RF spectrum analyzer. The use of the proposed forward-injection configuration can realize the repetition-rate tunability from I to 15 GHz for the generated optical-pulse sequences. By employing a wavelength-tunable optical band-pass filter in the laser cavity, the operation wavelength of the designed SOA-based actively mode-locked fiber laser can be tuned continuously in a wide span between 1528 and 1565 nm. The parameters of external-injection optical pulses are studied experimentally to optimize the mode-locked fiber laser. (C) 2009 Elsevier B.V. All rights reserved.

Yb3+-doped 200 mu m diameter core, gain guided index-antiguided fiber

The lasing in an end-pumped gain guided index-antiguided (GG-IAG) Yb3+-doped silicate glass fiber with a 200 mu m diameter core is demonstrated. Laser beams with similar beam propagation factors M (2) and mode field diameters W (0) (> 160 mu m) were observed at the output end of the GG-IAG fibers under different pump powers, which indicated that single mode behavior and excellent beam quality were achieved during propagation. Furthermore, the laser amplifier characteristics in the present Yb3+-doped GG-IAG fiber were also evaluated.

A novel noise optimization technique for inductively degenerated CMOS LNA

This paper proposes a novel noise optimization technique. The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier (LNA) circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation, respectively, by mathematical analysis and reasonable approximation methods. LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae. We design a 1.8 GHz LNA in a TSMC 0.25 pan CMOS process. The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW, demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.

A low power high linearity baseband for a direct conversation CMMB tuner

An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.