Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

High-spin level structure in Mo-94,Mo-95

High-spin level structures of 94,95Mo have been reinvestigated via the 16O(82Se, xnγ)94,95Mo(x = 4, 3) reactions at E(82Se) = 460 MeV. The previously reported level schemes of these two nuclei have been largely modified up to ∼11 MeV in excitation energy due to identifications of some important linking transitions. Shellmodel calculations have been made in the model space of π(p1/2, g9/2, d5/2)4 and ν(d5/2, s1/2, d3/2, g7/2, h11/2)2(3) and compared with the modified level schemes. The structures of the newly assigned high-spin states in 94,95Mo have been discussed.