Magneto-optical properties of diluted magnetic semiconductor quantum dots

The magnetoexciton polaron (MP) is investigated theoretically in a diluted magnetic semiconductor quantum dot (QD), with the Coulomb interaction and the sp-d exchange interaction included. The MP energy decreases rapidly with increasing magnetic field at low magnetic field and saturates at high magnetic field for small QDs, and the dependences of the MP energy on magnetic field are quite different for different QD radii due to the different carrier-induced magnetic fields B-MP. The competition between the sp-d exchange interaction and the band gap shrinkage results in there being a maximum exhibited by the MP energy With increasing temperature. Our numerical results are in good agreement with experiment (Maksimov A A, Bacher G, MacDonald A, Kulakovskii V D, Forchel A, Becker C R, Landwehr G and Molenkamp L W 2000 Phys. Rev. B 62 R7767).

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

The reflectivity spectra at different incident angles of semiconductor microcavity having heavy-hole exciton and light-hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy-hole exciton mode and light-hole exciton mode) in the three cavity polaritons increase or decrease.

In-plane propagation of cavity polaritons in a quantum semiconductor microcavity

Considering that the coupling among the heavy-hole exciton, light-hole exciton and the cavity photon can form bipolaritons in a quantum semiconductor microcavity, we calculate the group velocities of the cavity polaritons at different incident angles using the coupling model of three harmonic oscillators. The result indicates that the group velocities of the low and middle branches of the cavity polaritons have extrema, but the group velocities of the high branch increase with the increasing incident angle.

Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure

By means of hydrostatic pressure tuning, we have observed the strong-coupling exciton-polariton mode in a planar microcavity with an InGaAs/GaAs quantum well embedded in it, over a pressure range from 0.37 to 0.41 GPa. The experimental data can be fitted very well to a corresponding theoretical formula with a unique value of the vacuum Rabi splitting equal to 6.0 meV. A comparison between pressure tuning and other tuning methods is made as regards to what extent the intrinsic features of the exciton and cavity will be influenced during the tuning procedure.

Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect

The electronic structure of diluted magnetic semiconductor (DMS) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from "light"-hole to "heavy"-hole-like states.

Analysis of mode quality factors for equilateral triangle semiconductor microlasers with rough sidewalls

The eigenmode characteristics for equilateral triangle resonator (ETR) semiconductor microlasers are analysed by the finite-difference time-domain technique and the Pade approximation. The random Gaussian correlation function and sinusoidal function are used to model the side roughness of the ETR. The numerical results show that the roughness can cause the split of the degenerative modes, but the confined modes can still have a high quality factor. For the ETR with a 3 mum side length and the sinusoidal fluctuation, we can have a quality factor of 800 for the fundamental mode in the wavelength of 1500 nm, as the amplitude of roughness is 75 mn.

Longitudinal spin transport in diluted magnetic semiconductor superlattices: The effect of the giant Zeeman splitting

Longitudinal spin transport in diluted magnetic semiconductor superlattices is investigated theoretically. The longitudinal magnetoconductivity (MC) in such systems exhibits an oscillating behavior as function of an external magnetic field. In the weak magnetic-field region the giant Zeeman splitting plays a dominant role that leads to a large negative magnetoconductivity. In the strong magnetic-field region the MC exhibits deep dips with increasing magnetic field. The oscillating behavior is attributed to the interplay between the discrete Landau levels and the Fermi surface. The decrease of the MC at low magnetic field is caused by the s-d exchange interaction between the electron in the conduction band and the magnetic ions. The spin polarization increases rapidly with increasing magnetic field and the longitudinal current becomes spin polarized in strong magnetic field. The effect of spin-disorder scattering on MC is estimated numerically for low magnetic fields and found to be neglectible for our system.

Size limit and spontaneous emission factor for equilateral triangle semiconductor microlasers

The size of equilateral triangle resonator (ETR) needed for confining the fundamental mode is investigated by the total reflection condition of mode light rays and the FDTD numerical simulation. The confinement of the TM modes can be explained by the total reflection of mode light rays, and the confinement of the TE modes requires a larger ETR than the TM modes, which may be caused by excess scattering or radiation loss for the TE modes. With the multilayer staircase approximation, it is found that the spontaneous emission factor of the ETR lasers has the same form as that of strip waveguide lasers.

Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

Ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field is varied. An interesting beat pattern in the TMR and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction.

Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells

The magneto-Stark effect in a diluted magnetic semiconductor (DMS) coupled quantum well (CQW) induced by an in-plane magnetic field is investigate theoretically. Unlike the usual electro-Stark effects, in a DMS CQW the Lorenz force leads to a spatially separated exciton. The in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center of mass (CM)/momentum to a finite CM momentum, and render the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. (C) 2002 American Institute of Physics.

Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations

Semiconductor microlasers with an equilateral triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with the side length of about 5 mum, we find that single fundamental mode operation at about 1.55 mum can be obtained as the side length increases from 4.75 to 5.05 mum. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA.

Exciton energy of the InAs/GaAs self-assembled quantum dot in a semiconductor microcavity

We report on the theoretical study of the interaction of the quantum dot (QD) exciton with the photon waveguide models in a semiconductor microcavity. The InAs/GaAs self-assembled QD exciton energies are calculated in a microcavity. The calculated results reveal that the electromagnetic field reduces the exciton energies in a semiconductor microcavity. The effect of the electromagnetic field decreases as the radius of the QD increases. Our calculated results are useful for designing and fabricating photoelectron devices.

Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator

The eigenmodes confined in the equilateral triangle resonator (ETR) are analyzed by deriving the eigenvalues and the mode field distributions and by the finite difference time domain (FDTD) technique. The analytical results show that the one-period-length for the mode light rays inside the ETR is the perimeter of the ETR, and the number of transverse modes is limited by the condition of total internal reflection. In addition, the sum of the longitudinal mode index and the transverse mode index should be an even number, which limits the number of confined modes again. Based on the FDTD technique and the Pade approximation, we calculate the mode resonant frequencies and the quality factors from the local maximum and the width of the spectral distribution of the intensity The numerical results of mode frequencies agree very well with the analytical results, and the quality factor of the fundamental mode is usually higher than that of the higher order transverse modes. The results show that the ETR is suitable to realize single-made operation as semiconductor microcavity lasers.

Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction

A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.