Effects of helium and oxygen common implantation in silicon wafer

Defect engineering for SiO2] precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen (STMOX). Cavities are created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120keV 8.0 x 10(16) cm(-2) O ions. The O ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectional transmission electron microscopy (XTEM), Fourier transform infrared absorbance spectrometry (FTIR) and atomic force microscopy (AFM) measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

Precision measurement of excited spectra of oxygen ions

Spectra of the ionized oxygen atom were researched with the Pro-500i monochromator equipped with CCD. The beam foil method was used at energy of 2 MeV in a 2 x 1.7 Tandem accelerator. In this work, we report 201 spectral lines determined in the region 250-350 nm, and most spectral lines were attributed to n, l energy level transitions from O II to O IV atoms. Our experimental results are in good agreement with existing theoretical calculations. Many lines reported in this paper have not been measured in past experiments, and a majority of them are week transitional lines.

Oxidative activation of light alkanes on dense ionic oxygen conducting membranes

The oxidative dehydrogenation of ethane to ethylene (ODHE) has been studied in a catalytic membrane reactor (CMR) using a dense mixed ionic oxygen and electronic conducting perovskite membrane Ba0.5Sr0.5Co0.8Fe0.2O3-&. At 1080K, an ethylene yield of 66% was obtained with the bare membrane. After Pd cluster deposition, the ethylene yield reached 76% at 1050K. Ni cluster deposition led to a decrease of ethane conversion compared to the bare membrane without changing ethylene selectivity.

Novel cobalt-free oxygen permeable membrane

A series of cobalt-free and low cost perovskite oxygen permeable membranes based on BaCexFe1-xO3-delta (BCF) oxides was successfully synthesized and the membrane showed both high oxygen permeability and high stability under reductive atmosphere, which will be most suitable for constructing a membrane reactor for selective oxidation of light hydrocarbons to syngas or high value corresponding oxygenates.