p-p isotype organic heterojunction and ambipolar field-effect transistors

We realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2'; 7', 2 ''-terphenanthrenyl (Ph3) and vanadyl-phthalocyanine (VOPc). The ambipolar charge transport was attributed to the interfacial electronic structure of Ph3-VOPc isotype heterojunction, and electrons and holes were accumulated at both sides of the narrow band-gap VOPc and the wide band-gap Ph3, respectively, which were confirmed by the capacitance-voltage relationship of metal-oxide-semiconductor diodes. The accumulation thickness of carriers was also obtained by changing the heterojunction active layer thickness. Furthermore, the results indicate that the device performance is relative to interfacial electronic structures.

Ambipolar organic heterojunction transistors with various p-type semiconductors

Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices.

Incorporation of Nanoparticles into Polyelectrolyte Multilayers via Counterion Exchange and in situ Reduction

We report a general method for incorporation of nanoparticles into polyelectrolyte multilayer (PEM) thin films by utilizing the excess charges and associated counterions present in the PEMs. Silver ions were introduced directly into multilayers assembled from poly(diallyldimethylammonium chloride) (PDDA) and poly(styrene sulfonate) (PSS), (PDDA/PSS)(n), by a rapid ion exchange process, which were then converted into silver nanoparticles via in situ reduction to create composite thin films. The size and the content of the nanoparticles in the film call be tuned by adjusting the ionic strength in the polyelectrolyte solutions used for the assembly. Spatial control over the distribution of the nanoparticles in the PEM was achieved via the use of multilayer heterostructure containing PDDA/PSS bilayer blocks assembled at different salt concentrations. Because excess charges and counterions are always present in any PEM, this approach can be applied to fabricate a wide variety of composite thin Films based on electrostatic self-assembly.

Heterojunction ambipolar organic transistors fabricated by a two-step vacuum-deposition process

Ambipolar organic field-effect transistors (OFETs) are produced, based on organic heterojunctions fabricated by a two-step vacuum-deposition process. Copper phthalocyanine (CuPc) deposited at a high temperature (250 degrees C) acts as the first (p-type component) layer, and hexadecafluorophthalocyaninatocopper (F16CuPc) deposited at room temperature (25 degrees C) acts as the second (n-type component) layer. A heterojunction with an interpenetrating network is obtained as the active layer for the OFETs. These heterojunction devices display significant ambipolar charge transport with symmetric electron and hole mobilities of the order of 10(-4) cm(2) V-1 s(-1) in air. Conductive channels are at the interface between the F16CuPc and CuPc domains in the interpenetrating networks. Electrons are transported in the F16CuPc regions, and holes in the CuPc regions. The molecular arrangement in the heterojunction is well ordered, resulting in a balance of the two carrier densities responsible for the ambipolar electrical characteristics. The thin-film morphology of the organic heterojunction with its interpenetrating network structure can be controlled well by the vacuum-deposition process.

Interfacial electronic structure of copper phthalocyanine and copper hexadecafluorophthalocyanine studied by photoemission

Electronic structures of the heterojunction between copper phthalocyanine (CuPc) and copper hexadecafluorophthalocyanine (F16CuPc) were studied with ultraviolet photoemission spectroscopy. Band bending and an interface dipole were observed at the interface due to the formation of an electron accumulation layer and a depletion layer in F16CuPc and CuPc, respectively. Such an energy level alignment leads to interesting ambipolar characteristics for application of the CuPc/F16CuPc junction in organic field-effect transistors.

Synthesis and characterization of new carbazole/fluorene-based derivatives for blue-light-emitting devices

2,7-Bis(9-ethylcarbazol-3-yl)-9,9-di(2-ethylhexyl)fluorene and a segmented copolymer composed of the same chromophores alternated with hexamethylene fragments were synthesized. The obtained materials possess good solubility in common organic solvents, high thermal stability with 1% weight loss temperature of 350-370 degrees C, and suitable glass transition temperatures. Both derivatives show blue fluorescence in dilute solutions as well as in solid state, demonstrating that excimers are not formed in the thin films. The fluorescence spectra of the materials do not show any peaks in the long-wavelength region even after annealing at 200 degrees C in air. An organic LED with the configuration of ITO/copolymer/Al generates blue electroluminescence with the maximum peak at 416 nm, rather low turn-on voltage (4.0 V), and brightness of about 400 cd/m(2). The heterostructure device based on model derivative emitted stable blue light with low operation voltage (100 cd/m(2) at similar to 11 V) and demonstrated luminescence efficiency of 0.8 cd/A.

Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors

A diode with a reverse rectifying characteristics was fabricated based on the organic heterojunction of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc). At the heterojunction interface, HOMO of CuPc is bended upwards and LUMO of F16CuPc is bended downwards, since the charge carriers were accumulated at both side of the interface, electrons in F16CuPc and holes in CuPc. The thickness of holes accumulated at the CuPc layer is about 10 nm. which was determined by fabricating organic field-effect transistors with active layers in series of thickness. By utilizing the heterojunction-effect, the threshold voltage in organic transistors can be modified.