443 resultados para Diode lasers
Resumo:
研究了掺铒TeO2-ZnO-PbCl2碲酸盐基氧卤玻璃在977nm激光二极管抽运下的发光和上转换发光特性,结果发现除红外1.53μm^4I13.2→^4I15/2发光外(荧光半高宽高达69nm),该玻璃还存在很强的^2H11/2→^4I15/2(527nm),^4S3/2→^4I15/2(549nm)和^4R9/2→^4I15/2(666nm)可见上转换发光.应用Judd-Ofelt理论计算得到玻璃强度参数Ω1(t=2,4,6)分别为Ω2=5.87×10^20cm^2,Ω4=2.08×10^2-cm^2,
Resumo:
Fluorophosphate glass with 4 mol.% ErF3 content was prepared. The different scanning calorimetry was conducted. Raman spectrum, infrared transmission spectrum, absorption spectrum were measured. Fluorescence spectrum and lifetime of emission around 1.53 mu m were measured under 970 nm laser diode excitation. The metaphosphate content in the composition is limited, but the maximum phonon energy of glass amounts to 1290 cm- 1, and is comparatively high. The full width at half maximum is about 56 nm, and is wider than for most of the materials investigated. The measured lifetime of I-4(13/2) -> I-4(15/2) transition, contributed by the high phonon energy, inefficient interaction of Er3+ ions, and low water content, amounts to no less than 7.36 ms though the Er3+ concentration is high. This work might provide useful information for the development of compact optical devices.
Resumo:
Transparent glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals were synthesized and characterized by X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Intense broad-band luminescence centering at 1200 nm was observed when the sample was excited by a diode laser at 980 nm. The room-temperature fluorescent lifetime was 665 mu s, which is longer than the Ni2+-doped ZnAl2O4 and LiGa5O8 glass-ceramics and is also comparable to the Ni2+-doped LiGa5O8 single crystal. The intense infrared luminescence with long fluorescent lifetime may be ascribed to the high crystal field hold by Ni2+ and the moderate lattice phonon energy of beta-Ga2O3. The excellent optical properties of this novel material indicate that it might be a promising candidate for broad-band amplifiers and room-temperature tunable lasers.
Characterization of Er3+-doped Na2O-WO3-TeO2 glass for ion-exchanged waveguide amplifiers and lasers
Resumo:
Er^(3+)-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the Judd-Ofelt and McCumber theories. The intensity parameters are Ω2 = 7.01
Resumo:
Luminescences from bismuth-doped lime silicate glasses were investigated. Luminescences centered at about 400, 650, and 1300 nm were observed, excited at 280, 532 and 808 nm, respectively. These three luminescence bands arise from three different kinds of bismuth ions in the glasses. The visible luminescences centered at 400 and 650 nm arise from Bi3+, and Bi2+, respectively. The infrared luminescences cover the wavelength range from 1000 to 1600 nm when exited by an 808 nm laser diode. The full width at half maximum (FWHM) of the infrared luminescences is more than 205 urn. The intensity of the infrared luminescence decreases with the increment in CaO content. We suggest that the infrared luminescences might arise from Bi+. Such broadband luminescences indicate that the glasses may be potential candidate material for broadband fiber amplifiers and tunable lasers. (C) 2007 Elsevier B.V. All rights reserved.
Resumo:
Broadband infrared luminescence is observed in various Bi-doped oxide glasses prepared by conventional melting-quenching technique. The absorption spectrum of the Bi-doped germanium oxide glass consists of five broad peaks at below 370, 500, 700, 800 and 1000 nm. The fluorescence spectrum exhibits a broad peak at about 1300 nm with full width at half maximum (FWHM) of more than 300 nm when excited by an 808 nm laser diode. The fluorescence lifetime at room temperature decreases with increasing Bi2O3 concentration. Influence of the glass composition and melting atmosphere on the fluorescence lifetime and luminescent intensity is investigated. The mechanism of the broadband infrared luminescence is suggested. The product of stimulated emission cross-section and lifetime of the Bi-doped aluminophosphate glass is about 5.0 X 10(-24) cm(2) s. The glasses might be promising for applications in broadband optical fiber amplifiers and tunable lasers. (c) 2007 Elsevier B.V. All rights reserved.
Resumo:
Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.
Resumo:
We report a novel phenomenon in GeS2-In2S3-CsI chalcohalide glass doped with Tm3+ ions. Under irradiation with an 808 nm laser diode, a bright red emission centered at 700 nm is observed for the first time in this glass. The log-log correlation between integrated emission intensity and pump power reveals that a two-photon absorption process is involved in the phenomenon, suggesting that the F-3(3,2) -> H-3(6) transition of Tm3+ ions is responsible for the appearance of the red emission. The results indicate that the indium (In) based chalcohalide glass containing Tm3+ ions is expected to find applications in visible lasers, high density optical storage and three-dimensional color displays. (C) 2009 Elsevier B.V. All rights reserved.
Resumo:
我们报道了一种以二极管泵浦的 1.94 μm Tm:YAP激光器为泵浦源,常温下在2.1 μm连续运行的Ho:YAG激光器。最大输出功率1.5 W,相应斜率效率为17.9%,二极管到的转换效率为5.6%。
Resumo:
We demonstrate, for the first time as far as Re known, a passively Q-switched operation of a Nd:YVO4 laser in which a Cr4+:YAG crystal and a laser-diode bar are used as the saturable absorber and the pump source, respectively. Stable laser pulses as short as 28 ns with 20-mu J energy can be generated with this laser, which has the advantages of simplicity, high efficiency, and good long-term stability. (C) 1997 Optical Society of America.