Relation between Stabilization Energy, Crystal Field Coefficient and the Magnetic Exchange Interaction for Tb3+ Ion

Based on a single ion model, Hamiltonian of the simplest form about magnetocrystalline anisotropy for Tb3+ ion was solved by using the numerical method. The relation between the stabilization energy, crystal field coefficient B-2(0) and the magnetic exchange interaction was studied as temperature approaches to 0 K. The results show that the stabilization energy contributed by Tb3+ is linear with crystal field coefficient B-2(0) approximately, but it is insensitive to the change of magnetic exchange interaction for the strong magnetic substances such as TbCo5, Tb2Co17 and Tb2Fe14B compounds.

Crystal-Field Symmetry of Luminescence Center in Er-Implanted Silicon

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Dependence of crystal field splitting of 5d levels on hosts in the halide crystals

The crystal field splitting of 5d level of EU2+ and Ce3+ in halide crystals has been studied. Our results indicate that the 10Dq splitting can be directly related to the homopolar part of average energy gap, the coordination number of central (doped) ion, the charge of neighboring anions and bond ionicity between central ion to nearest anions. A relation between the 10Dq splitting and the above mentioned factors is presented. Our calculated results are in reasonable agreement with diverse experiments.

Crystal field splitting of Nd3+ ion and chemical bonds on the host crystals

In terms of the theory of chemical bonds on complex crystals(CBCC), the crystal structure and coordination, the chemical bond parameters of a group of ABO(4)-type crystals were calculated in detail, The results show that the relation between the crystal field splitting of Nd3+ ion and the covalency of the crystal is linear.

EFFECT OF CRYSTAL-FIELD AND BONDING PROPERTIES ON SPECTRAL STRUCTURE OF EU-2+

Five Eu~(2+)-doped simple fluorides and six Eu~(2+)-doped complex fluorides are synthesized by solid reactions. The strength of the crystal-field at the sites of Eu~(2+) ion, and the degroe of covalenco of Eu—F bond in these hosts are discussed. The f-f transition emission of Eu~(2+) ion is observed in the hosts which has lower coordination number and strong crystal-field. The f-f transition emission of Eu~(2+) ion is observed for the first time in the simple fluoride AlF_3.

THE INFLUENCE OF CRYSTAL-FIELD AND COVALENT CHARACTERISTICS ON THE ELECTRONIC-TRANSITION EMISSION OF EU-2+ ION

In most cases the luminescence of Eu~(2+) consists of a d-f broad-band emission, in some particular hosts, however, Eu~(2+) can also give out f-f narrow-line emission. There are two factors of importance here: the first is the strength of the crystal-field

Single crystal beta-Ga2O3: Cr grown by floating zone technique and its optical properties

beta-Ga2O3: Cr single crystals were grown by floating zone technique. Absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were obtained by the peak values of absorption spectra. The value 10Dq/B=23.14 manifests that in beta-Ga2O3 crystals Cr3+ ions are influenced by low energy crystal field. After high temperature annealing in air, the Cr3+ intrinsic emission was enhanced and the green luminescence disappeared. The strong and broad 691 nm emission was obtained at 420 nm excitation due to the electron transition occurred from T-4(2) to (4)A(2). The studies manifest that the beta-Ga2O3 crystals have the potential application for tunable laser.

Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5

A bulk crystal of Yb:Sc2SiO5 (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2x10(-21) cm(2). The largest ground-state splitting of Yb3+ ions is up to 1027 cm(-1) in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W.

Effects of magnetic field on the electronic structure of wurtzite quantum dots: Calculations using effective-mass envelope function theory

The Hamiltonian of the wurtzite quantum dots in the presence of an external homogeneous magnetic field is given. The electronic structure and optical properties are studied in the framework of effective-mass envelope function theory. The energy levels have new characteristics, such as parabolic property, antisymmtric splitting, and so on, different from the Zeeman splitting. With the crystal field splitting energy Delta(c)=25 meV, the dark excitons appear when the radius is smaller than 25.85 A in the absence of external magnetic field. This result is more consistent with the experimental results reported by Efros [Phys. Rev. B 54, 4843 (1996)]. It is found that dark excitons become bright under appropriate magnetic field depending on the radius of dots. The circular polarization factors of the optical transitions of randomly oriented dots are zero in the absence of external magnetic field and increase with the increase of magnetic field, in agreement with the experimental results. The circular polarization factors of single dots change from nearly 0 to about 1 as the orientation of the magnetic field changes from the x axis of the crystal structure to the z axis, which can be used to determine the orientation of the z axis of the crystal structure of individual dots. The antisymmetric Hamiltonian is very important to the effects of magnetic field on the circular polarization of the optical transition of quantum dots.

Chemical bond analysis of nonlinearity of urea crystal

A novel and quantitative study on structure-property relationships has been carried out in urea crystal, based on the dielectric theory of complex crystals and the modified Levine bond charge model, mainly from the chemical bond viewpoint. For the first time, it was treated like this, and the bond parameters and linear and nonlinear characteristics of constituent chemical bonds were presented quantitatively. The theoretical result agrees satisfactorily with the experimental datum and can reasonably explain the nonlinear origin of urea crystal, that is, the C-N bond in the conjugated system of bonds O double left arrow C<--N-H. At the same time, the novel method should be a useful tool toward the future development of the search for new nonlinear optical (NLO) materials in the organic crystal field.

ANALYSIS OF ANGULAR OVERLAP PARAMETERS FOR EU3+ - LN2O2S (LN = LU, Y, GD, LA) CRYSTAL SERIES

The angular overlap model (AOM) is applied to 4f6 electron systems. The crystal field parameters are interpreted and covalency between 4f electrons and ligands is investigated based on the experimental energy levels. For Eu3+:Ln2O2S (Ln = Lu, Y, Gd, La) crystal series, we adopt two computational schemes. First of all, we assume that the distances to all ligands are equal, and then the distances to all ligands are divided into two groups, namely, oxygens as one group, sulfurs as the other. Of course, much information about covalency will be obtained from the latter case. Obviously, our results show that the covalency of Ln-O bonding is stronger than that of Ln-S bonding in line with much shorter bondlength for the former than that for the latter. The two schemes yield the same results, that is, for sigma and pi bonding, ligands are strong donors as well as sigma, pi effects are dominant over delta, phi effects.

Broadband near-infrared emission from transparent Ni2+-doped silicate glass ceramics

Transparent Ni2+-doped MgO-Al2O3-TiO2-SiO2 glass ceramics were prepared, and the optical properties of Ni2+-doped glass ceramics were investigated. Broadband emission centered at 1320 nm was observed by 980 nm excitation. The longer wavelength luminescence compared with Ni2+-doped Li2O-Ga2O3-SiO2 glass ceramics is ascribed to the low crystal field hold by Ni2+ in MgO-Al2O3-TiO2-SiO2 glass ceramics. The change in optical signals at the telecommunication bands with or without 980 nm excitation was also measured when the seed beam passes through the bulk gain host.(C) 2007 American Institute of Physics.

Intense infrared luminescence in transparent glass-ceramics containing beta-Ga2O3 : Ni2+ nanocrystals

Transparent glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals were synthesized and characterized by X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Intense broad-band luminescence centering at 1200 nm was observed when the sample was excited by a diode laser at 980 nm. The room-temperature fluorescent lifetime was 665 mu s, which is longer than the Ni2+-doped ZnAl2O4 and LiGa5O8 glass-ceramics and is also comparable to the Ni2+-doped LiGa5O8 single crystal. The intense infrared luminescence with long fluorescent lifetime may be ascribed to the high crystal field hold by Ni2+ and the moderate lattice phonon energy of beta-Ga2O3. The excellent optical properties of this novel material indicate that it might be a promising candidate for broad-band amplifiers and room-temperature tunable lasers.

Transparent Ni2+-doped silicate glass ceramics for broadband near-infrared emission

Transparent Ni2+-doped MgO-Al2O3-Ga2O3-SiO2-TiO2 glass ceramics were fabricated. The precipitated nanocrystal phase in the glass ceramics was identified by X-ray diffraction and transmission electron microscope. Broadband near-infrared emission centered at 1220 nm with full width at half maximum of about 240 nm and lifetime of about 250 mu s was observed with 980 nm excitation. The longer wavelength emission compared with Ni2+-doped MgAl2O4 crystal was attributed to the low crystal field occupied by Ni2+ in the glass ceramics. The present Ni2+-doped transparent glass ceramics may have potential applications in broadband optical amplifiers. (c) 2007 Elsevier B.V. All rights reserved.