Hot-corrosion behaviors of overlay-clad yttria-stabilized zirconia coatings in contact with vanadate-sulfate salts

A dense clad overlay with chemical inertness was achieved on top of the plasma-sprayed YSZ thermal barrier coatings by laser in order to protect them from hot-corrosion attack. The Al2O3-clad YSZ coating exhibited good hot-corrosion behavior in contact with salt mixture of vanadium pentoxide (V2O5) and sodium sulfate (Na2SO4) for a longtime of 100 h at 1173 K. The LaPO4-clad YSZ coating showed corrosion resistance inferior to the Al2O3-clad one. Yttria was leached from YSZ by reaction between Y2O3 and V2O5, which caused progressive destabilization transformation of YSZ from tetragonal (t) to monoclinic (m) phase. The chemical inertness of the clad layers and the restrained infiltration of the molten corrosive salts by the dense clad layers were primary contributions to improvement of the hot-corrosion resistances.

Influence of laser-glazing on hot corrosion resistance of yttria-stabilized zirconia TBC in molten salt mixture of V2O5 and Na2SO4

Plasma-sprayed 8YSZ (zirconia stabilized with 8 wt% yttria)/NiCoCrAlYTa thermal barrier coatings (TBCs) were laser-glazed using a continuous-wave CO2 laser. Open pores within the coating surface were eliminated and an external densified layer was generated by laser-glazing. The hot corrosion resistances of the plasma-sprayed and laser-glazed coatings were investigated. The two specimens were exposed for the same period of 100 h at 900 degrees C to a salt mixture of vanadium pentoxide (V2O5) and sodium sulfate (Na2SO4). Serious crack and spallation occurred in the as-sprayed coating, while the as-glazed coating exhibited good hot corrosion behavior and consequently achieved a prolonged lifetime. The results showed that the as-sprayed 8YSZ coating achieved remarkably improved hot corrosion resistance by laser-glazing.

Efficient top-emitting organic light-emitting diodes with a V2O5 modified silver anode

We fabricated efficient top-emitting organic light-emitting diodes (OLEDs) with silver (Ag) as an anode and samarium (Sm) as a semi-transparent cathode. The hole-injection barrier at the Ag anode/hole transporter interface is reduced by inserting a buffer layer of vanadium oxide (V2O5) between them. The ultraviolet photoelectron spectroscopy analysis shows that the hole-injection barrier is reduced by 0.5 eV. Both the V2O5 thickness and the organic layer thickness are optimized. The optimized device achieves a maximum current efficiency of 5.46 cd A(-1) and a power efficiency of 3.90 lm W-1, respectively.

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors

A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Tunable optical properties of nano-Au on vanadium dioxide

The optical properties of Au nanoparticles deposited on thermochromic thin films of VO2 are investigated using spectroscopy. A localized modification on the transmittance spectrum of VO2 film is formed due to the presence of Au nanoparticles which exhibit localized surface plasmon resonance (LSPR) in the visible-near IR region. The position of the modification wavelength region shows a strong dependence on the Au mass thickness and shifts toward the red as it increases. On the other hand, it was found that the LSPR of Au nanoparticles can be thermally tunable because of the thermochromism of the supporting material of VO2. The LSPR wavelength, lambda(SPR), shifts to the blue with increasing temperature, and shifts back to the red as temperature decreases. A fine tuning is achieved when the temperature is increased in a stepwise manner.

Nano-Ag on vanadium dioxide. I. Localized spectrum tailoring

We report on the utilization of localized surface plasmon resonance (LSPR) of Ag nanoparticles to tailor the optical properties Of VO2 thin film. Interaction of nano-Ag with incident light yields a salient absorption band in the visible-near IR region and modifies the spectrum Of VO2 locally. The wavelength of modification occurs in a limited spectral region rather than affects the full spectrum. The wavelength of modification shows a strong dependence on the metal nanoparticle size and shifts toward the red as the particle size or the mass thickness of nano-Ag increases. Also, we found that the wavelength can be shifted into the IR further by introducing a thin layer of TiO2 onto the nano-Ag. Interestingly, with the help of LSPR effects the VO2 film exhibits an anomalous thermochromic behavior in the modification wavelength region, which may be useful in optical switching applications.

Nano-Ag on vanadium dioxide. II. Thermal tuning of surface plasmon resonance

Thermal tuning of the localized surface plasmon resonance (LSPR) of Ag nanoparticles on a thermochromic thin film of VO2 was studied experimentally. The tuning is strongly temperature dependent and thermally reversible. The LSPR wavelength lambda(SPR) shifts to the blue with increasing temperature from 30 to 80 degrees C, and shifts back to the red as temperature decreases. A smart tuning is achievable on condition that the temperature is controlled in a stepwise manner. The tunable wavelength range depends on the particle size or the mass thickness of the metal nanoparticle film. Further, the tunability was found to be enhanced significantly when a layer of TiO2 was introduced to overcoat the Ag nanoparticles, yielding a marked sensitivity factor Delta lambda(SPR)/Delta n, of as large as 480 nm per refractive index unit (n) at the semiconductor phase of VO2.

Ethylene polymerization, and the copolymerizations of ethylene with hexene or norbornene with highly active mono(beta-enaminoketonato) vanadium(III) catalysts

Five novel vanadium(III) complexes [PhN = C(R-2)CHC(R-1)O]VCl2(THF)(2) (4a: R-1 = Ph, R-2 = CF3; 4b: R-1 =t-Bu, R-2 = CF3; 4c: R-1 = CF3, R-2 = CH3; 4d: R-1 = Ph, R-2 = CH3; 4e: R-1 = Ph, R-2 = H) have been synthesized and characterized. On activation with Et2AlCl, all the complexes, in the presence of ethyl trichloroacetate (ETA) as a promoter, are highly active precatalysts for ethylene polymerization, and produce high molecular weight and linear polymers. Catalyst activities more than 16.8 kg PE/mmolv h bar and weight-average molecular weights higher than 173 kg/ mol were observed under mild conditions.

Synthesis, structural characterization, and ethylene polymerization behavior of the vanadium(III) complexes bearing salicylaldiminato ligands

Vanadium(III) complexes bearing salicylaldiminato ligands (2a-k) [RN=CH(Ar0)]VCl2(THF)2 (Ar C61714, R = Ph, 2a; p-CF3Ph, 2b; p-CH3Ph, 2c; 2,6-Me2Ph, 2d; 2,6-iPr2Ph, 2e; cyclohexyl, 2f; Ar = C6H3tBu(2), R = Ph, 2g; 2,6-iPr2Ph, 2h; Ar = C6H2tBU2(2,4), R = Ph, 2i; 2,6-iPr2Ph, 2j; Ar = C6H2Br2, R = Ph, 2k) were prepared from VC13(THF)3 by treating with 1.0 equiv of (RN=CH)ArOH in tetrahydrofuran (THF) in the presence of excess triethylamine (TEA).

Synthesis, Structural Characterization, and Olefin Polymerization Behavior of Vanadium(III) Complexes Bearing Tridentate Schiff Base Ligands

Vanadium(III) complexes bearing tridentate salicylaldiminato ligands (2a-f) [OC6H4CH=NL]VCl2(THF) (L = CH2CH2OMe, 2a; CH2CH2NMe2, 2b; CH2C5H4N, 2c; 8-C9H6N (quinoline), 2d; 2-MeSC6H4, 2e; 2-Ph2PC6H4, 2f) and tridentate beta-enaminoketonato ligands [OC6H8CH=N-2-Ph2PC6H4]VCl2(THF) (2g) and [O(Ph)C=CHCH=N-2-Ph2PC6H4]VCl2(THF) (2h) were prepared from VCl3(THF)(3) by treating with 1.0 equiv of the deprotonated ligands in tetrahydrofuran (THF). These complexes were characterized by FTIR and mass spectrometry as well as elemental analysis. Structures of complexes 2e, 2f, and 2h were further confirmed by X-ray crystallographic analysis. These complexes were investigated as catalysts for olefin polymerization in the presence of organoaluminum compounds. On activation with Et2AlCl, complexes 2a-h exhibited high catalytic activities toward ethylene polymerization (up to 20.64 kg PE/mmol(v) center dot h center dot bar) even at high temperature, suggesting these catalysts possess high thermal stability.