Energy transfer and tunable luminescence properties of Eu3+ in TbBO3 microspheres via a facile hydrothermal process

Tb(1-x)BO3:xEu(3+) (x = 0-1) microsphere phosphors have been successfully prepared by a simple hydrothermal process directly without further sintering treatment. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), photoluminescence (PL), low-voltage cathodoluminescence (CL), and time-resolved emission spectra as well as lifetimes were used to characterize the samples.

Tunable Luminescence in Monodisperse Zirconia Spheres

In this article, monodisperse spherical zirconia (ZrO2) particles with a narrow size distribution were prepared by the controlled hydrolysis of zirconium butoxide in ethanol, followed by heat treatment in air at low temperature from 300 to 500 degrees C. X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, thermogravimetric and differential thermal analysis (TG/DTA), scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectra, kinetic decay, and electron paramagnetic resonance were used to characterize the samples. The experimental results indicate that the annealed ZrO2 samples exhibit broad, intense visible photoluminescence. The annealing temperature is indispensable for the luminescence of the obtained ZrO2 particles. The emission colors of the ZrO2 samples can be tuned from blue to nearly white to dark orange by varying the annealing temperature.

beta-NaYF4 and beta-NaYF4:Eu3+ Microstructures: Morphology Control and Tunable Luminescence Properties

beta-NaYF4 hexagonal microprisms and microrods with different aspect ratios have been prepared via a simple hydrothermal route. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectra as well as kinetic decays were used to characterize the samples. The influences of reaction temperature and the molar ratio of NaF to y(3+) on the crystal phases and shapes of final products have been studied in detail. The aspect ratios of products increase gradually with the increase of reaction temperature and NaF/Y3+ molar ratio. The growth mechanisms of crystals prepared under the different conditions are presented systematically. More importantly, the systematical investigation on the luminescence properties of beta-NaYF4:xEu(3+) (x = 0.5, 1, 2, 3, 5, and 10 mol %) with hexagonally microprismatic morphology shows the characteristic emissions of Eu3+ (D-5(J)-F-7(J'), J, J' = 0, 1, 2, 3). Under the excitation of single wavelength light of 397 nm, the luminescence colors of the corresponding products can be tuned feasibly from bluish white to yellow to red by changing the doping concentration of Eu3+.

Tunable luminescence properties of CaIn2O4 : Eu3+ phosphors

CaIn2O4:Eu3+ phosphors were prepared by a Pechini so-gel process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence (PL), cathodoluminescence (CL) spectra as well as lifetimes were utilized to characterize the samples. The XRD results reveal that the samples begin to crystallize at 800 degrees C, and the crystallinity increases upon raising the annealing temperature. The FE-SEM images indicate that the CaIn2O4:Eu3+ samples consist of fine and spherical grains with size around 200-400 nm. Under the excitation of ultraviolet light and low-voltage electron beams, the CaIn2O4:Eu3+ phosphors show the characteristic emissions of Eu3+ ((DJ-7FJ ')-D-5 J, J ' = 0, 1, 2, 3 transitions). The luminescence color can be tuned from white to orange to red by adjusting the doping concentration of EU3+. The corresponding luminescence mechanisms have been proposed.

Tunable luminescence properties of Tb3+-doped LaGaO3 nanocrystalline phosphors

Nanocyrstalline Tb3+-doped LaGaO3 phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction, field-emission scanning electron microscopy (FESEM), photoluminescence, cathodoluminescence spectra, and lifetimes were utilized to characterize the synthesized phosphors. XRD results reveal that the sample begins to crystallize at 900 degrees C and pure LaGaO3 phase can be obtained at 1000 degrees C. FESEM images indicate that the Tb3+-doped LaGaO3 phosphors are composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of ultraviolet light and low-voltage electron beams (0.5-3 kV), the Tb3+-doped LaGaO3 phosphors show the characteristic emissions from the LaGaO3 host lattice and the Tb3+ (D-5(3,4)-F-7(6,5,4,3) transitions). The emission colors of Tb3+-doped LaGaO3 phosphors can be tuned from blue to green by changing the excitation wavelength of ultraviolet light and the doping concentration of Tb3+ to some extent. Relevant luminescence mechanisms are discussed.

铕离子掺杂和铕铝共掺高硅氧玻璃的光谱性能

Eu-doped and Eu/Al-codoped high silica glass to investigate the properties of europium ions in high silica glasses were obtained. The porous glasses were immersed into europium nitrate solution or mixed solution of europium nitrate and aluminum nitrate. After dried, the doped porous glasses were sintered at 1200°C to obtain Eu-doped and Eu/Al-codoped high silica glasses. The reduction of Eu³⁺&rarrEu²⁺ was observed in Eu/Al-codoped high silica glass. The ratio of trivalent and bivalent europium ions was adjusted by the addition of aluminum ions and then the luminescent color of the glasses was controlled. A detailed mechanism was given to explain this reduction process.

Transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence

We report transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence. After heat-treatment, ZnAl2O4 crystallite was precipitated in the glasses, and its average size increased with increasing heat-treatment temperature. No infrared emission was detected in the as-prepared glass samples, while broadband infrared luminescence centered at 1310 nm with full width at half maximum (FWHM) of about 300 nm was observed from the glass-ceramics. The peak position of the infrared luminescence showed a blue-shift with increasing heat-treatment temperature, but a red-shift with an increase in NiO concentration. The mechanisms of the observed phenomena were discussed. These glass-ceramics are promising as materials for super broadband optical amplifier and tunable laser. (c) 2006 Elsevier Ltd. All rights reserved.

Intense infrared luminescence in transparent glass-ceramics containing beta-Ga2O3 : Ni2+ nanocrystals

Transparent glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals were synthesized and characterized by X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Intense broad-band luminescence centering at 1200 nm was observed when the sample was excited by a diode laser at 980 nm. The room-temperature fluorescent lifetime was 665 mu s, which is longer than the Ni2+-doped ZnAl2O4 and LiGa5O8 glass-ceramics and is also comparable to the Ni2+-doped LiGa5O8 single crystal. The intense infrared luminescence with long fluorescent lifetime may be ascribed to the high crystal field hold by Ni2+ and the moderate lattice phonon energy of beta-Ga2O3. The excellent optical properties of this novel material indicate that it might be a promising candidate for broad-band amplifiers and room-temperature tunable lasers.

Luminescence properties of bismuth-doped lime silicate glasses

Luminescences from bismuth-doped lime silicate glasses were investigated. Luminescences centered at about 400, 650, and 1300 nm were observed, excited at 280, 532 and 808 nm, respectively. These three luminescence bands arise from three different kinds of bismuth ions in the glasses. The visible luminescences centered at 400 and 650 nm arise from Bi3+, and Bi2+, respectively. The infrared luminescences cover the wavelength range from 1000 to 1600 nm when exited by an 808 nm laser diode. The full width at half maximum (FWHM) of the infrared luminescences is more than 205 urn. The intensity of the infrared luminescence decreases with the increment in CaO content. We suggest that the infrared luminescences might arise from Bi+. Such broadband luminescences indicate that the glasses may be potential candidate material for broadband fiber amplifiers and tunable lasers. (C) 2007 Elsevier B.V. All rights reserved.

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Infrared (1.2-1.6 mu m) luminescence in Cr4+: Yb3Al5O12 single crystal with 940 nm diode pumping

Infrared (1.2-1.6 mu m) luminescence in a ytterbium aluminium garnet (YbAG) crystal, doped with Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.34 mu m and measured to be about 1.3 times with respect to Yb3+ IR luminescence (lambda = 1.03 mu m). We demonstrate that for the excitation wavelength of 940 nm Yb3+ ions act as sensitizers of the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as a high-efficient system for tunable laser (1.2-1.6 mu m) output. (c) 2004 Elsevier B.V. All rights reserved.

Broadband infrared luminescence of bismuth-doped borosilicate glasses

We prepare bismuth-doped borosilicate glasses and the luminescence properties in infrared wavelength region are investigated. Transmission spectrum, fluorescence spectrum and fluorescence decay curve are measured. The glasses exhibit a broad infrared luminescence peaking at 1340nm with the full width at half maximum of about 205nm, and lifetime of 273 mu s when excited by an 808-nm laser diode. The glasses are promising materials for broadband optical amplifiers and tunable lasers.

Broadband infrared luminescence from Li2O-Al2O3-ZnO-SiO2 glasses doped with Bi2O3

The broadband emission in the 1.2 similar to 1.6 mu m region from Li2O-Al2O3-ZnO-SiO2 ( LAZS) glass codoped with 0.01mol.% Cr2O3 and 1.0mol.% Bi2O3 when pumped by the 808nm laser at room temperature is not initiated from Cr4+ ions, but from bismuth, which is remarkably different from the results reported by Batchelor et al. The broad similar to 1300nm emission from Bi2O3-containing LAZS glasses possesses a FWHM ( Full Width at Half Maximum) more than 250nm and a fluorescent lifetime longer than 500 mu s when excited by the 808nm laser. These glasses might have the potential applications in the broadly tunable lasers and the broadband fiber amplifiers. (c) 2005 Optical Society of America.

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.