Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

A nonmonotonic dependence of standard rate constant on reorganization energy for heterogeneous electron transfer processes on electrode surface

In the present work a nonmonotonic dependence of standard rate constant (k(0)) on reorganization energy (lambda) was discovered qualitatively from electron transfer (Marcus-Hush-Levich) theory for heterogeneous electron transfer processes on electrode surface. It was found that the nonmonotonic dependence of k(0) on lambda is another result, besides the disappearance of the famous Marcus inverted region, coming from the continuum of electronic states in electrode: with the increase of lambda, the states for both Process I and Process II ET processes all vary from nonadiabatic to adiabatic state continuously, and the lambda dependence of k(0) for Process I is monotonic thoroughly, while for Process II on electrode surface the lambda dependence of k(0) could show a nonmonotonicity.

P-6(7/2)-excited-state decay mechanism and energy-transfer processes in KMgF3 : Eu2+ and KMgF3 : EuX (X = Gd, Ce, Cr)

A four-level decay model in KMgF3:Eu2+ is proposed. The decay profiles of the P-6(7/2) excited state of Eu2+ are biexponential, and the physical implication of each term in the fit equation responsible for the model is interpreted. The evidence obtained spectroscopically for supporting the model is presented. A new method to study energy transfer between Eu2+ and X3+ in KMgF3:Eu-X (X = Gd, Ce, Cr) is established on the basis of the proposed model.

Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots

The excitation transfer processes in vertically self organized pairs of unequal-sized quantum dots (QD's), which are created in InAs/GaAs bilayers with different InAs deposition amounts in the first and second layers, have been investigated experimentally by photoluminescence technique. The distance between the two dot layers is varied from 3 to 12 nm. The optical properties of the formed pairs of unequal-sized QD's with clearly discernible ground-state transition energy depend on the spacer thickness. When the spacer layer of GaAs is thin enough, only one photoluminescence peak related to the large QD ensemble has been observed as a result of strong electronic coupling in the InAs QD pairs. The results provide evidence for nonresonant energy transfer from the smaller QDs in the second layer to the larger QD's in the first layer in such an asymmetric QD pair.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Spectroscopic studies on charge transfer from Ce3+, to Yb3+ in KMgF3 : Ce, Yb nanocrystals

Nanocrystals of KMgF3 single-doped and codoped with Ce3+ or/and Yb3+ were synthesized separately by the microemulsion method. The X-ray diffraction(XRD) patterns were indexed to show that the KMgF, crystal system was unchanged. The fluorescent spectra of KMgF3:Ce, Yb polycrystal powders were studied and compared with those of the Ce, Yb doped KMgF3 crystals produced using the high-temperature solid phase method. The diffuse reflection spectra and infrared. emission of KMgF3:Ce, Yb were investigated. From the results, the authors could confirm that there were charge transfer processes from Ce3+ to Yb3+ in both KMgF3: Ce,Yb nanocrystals and polycrystal powders.

Luminescence and energy transfer properties of Ca2Gd8(SiO4)(6)O-2 : A(A = Pb2+, Tm3+) phosphors

Ca2Gd8(SiO4)(6)O-2: A(A = Ph2+, Tm3+) phosphors were prepared through the sol-gel process. X-ray diffraction (XRD), scanning electron microseopy(SEM) and photoluminescence spectra were used to characterize the resulting phosphors. The results of XRD indicate that the phosphors crystallized completely at 1000 degreesC. SEM study reveals that the average grain size is 300 similar to 1000 nm. In Ca2Gd8(SiO4)(6)O-2: Tm3+ phosphors, the Tm3+ shows its characteristic blue emission at 456 nm (D-1(2)-F-3(4)) upon excitation into its H-3(6)-D-1(2)(361 nm), with an optimum doping concentration of 1 mol% of Gd3+ in the host lattices. In Ca2Gd8(SiO4)(6)O-2: Pb2+, Tm3+ phosphors, excitation into the Ph2+ at 266 nm (S-1(0)-P-3(1)) yields the emissions of Gd3+ at 311 nm (P-6-S-8) and Tm3+ at 367 nm (D-1(2)-H-3(6)) and 456 our (D-1(2)-F-3(4)), indicating that energy transfer processes of Pb2+-Gd3+ and Ph2+-Tm3+ have occur-red in the host lattices.

Gd3+ -> Eu2+ energy transfer in BaLiF3 : Eu, Gd

Photoluminescence characteristics and the energy transfer between Gd3+ and Eu2+ in BaLiF3,, matrix have been investigated. A series of concentrations of Gd3+ ion with a fixed Eu2+ concentration doped in BaLiF3 : Gd3+, Eu2+ has been studied. When the doping concentration for Gd3+ was 0.3%,, the system reached the highest energy transfer efficiency. Due to the competitive absorption for the Gd3+ and the Eu2+ ions in BaLiF3 : Gd3+ : Eu2+, when the doping concentration for Gd3+ ion exceeded 0.3 Vo, the continuously increasing concentration of Gd3+ ions caused the competitive absorption ratio for Gd3+ increasing and the emission intensity of Eu2+ decreasing. The energy transfer processes were discussed, while the transfer probability was calculated to be 1.35 X 10(5) s(-1).

Study of energy transfer between rare earth ions in CaS host by photoluminescence spectra

When CaS:Sm3+, Eu2+ is excited at 476.5 nm (Ar+), the emission spectra taken at room temperature and at 77 K are different, indicating that there are two competitive energy transfer processes-Sm3+ --> Eu2+ and Eu2+ --> Sm3+ with phonon participation. So, the luminescence intensity of Sm3+ increases first, and then decreases as the concentration of Eu2+ is increasing. (C) 2001 Elsevier Science Ltd. All rights reserved.

Study of energy transfer in KMgF3 : Eu-X (X = Gd, Cr, Ce) by the decay model of P-6(7/2) exited state of Eu2+

Energy transfer processes between Eu2+ and Gd3+, Cr3+, Ce3+ ions in KMgF3, which are difficult to study spectroscopically, have been investigated by using the proposed four-level decay model of the P-6(7/2) excited state of the Eu2+ ion. Gd3+ and Ce3+ transfer its energy to the vibronic transition of the P-6(7/2) --> S-8(7/2) transition of Eu2+, whereas Cr3+ receive energy from Eu2+ via the d-d interaction. The energy transfer from the Eu2+ 4f(6)5d level to the Ce3+ 4f5d state is observed spectroscopically, and the energy transfer mechanism is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

ELECTROCHEMICAL STUDY OF ISOPOLY AND HETEROPOLY ANION TRANSFER ACROSS THE WATER NITROBENZENE INTERFACE .2. VANADIUM-CONTAINING HETEROPOLYTUNGSTATE ANIONS

The electrochemical transfer behaviour of vanadium-containing heteropolytungstate anions [PW12-xVxO40]((3+r)-) (x = 1-4) across the water \nitrobenzene interface has been investigated by cyclic voltammetry and chronopotentiometry with cyclic linear current scanning. The transfer of PW11V1O404-, HPW10V2O404-, H2PW10V2O403-, H3PW9V3O403- and H4PW8V4O(40)(3-) across the water \nitrobenzene interface can be observed within the potential window. The effects were observed of pH in the water phase on the transfer behaviour and the formation of vanadium-containing heteropolytungstate anions in solution. Heteropolytungstate anions become more stable due to their involving the vanadium atom. The degree of protonation and the dissociation constant of the trivalent vanadium-containing heteropolytungstate anion of protonation increase with increasing vanadium content. The transfer processes are diffusion-controlled The standard transfer potential, the standard Gibbs energy and the dissociation constant for vanadium-containing heteropolytungstate anions have been obtained and the transfer mechanisms are discussed.