Spectroscopic properties of Ce : YAP scintillation crystal grown by temperature gradient technique

Spectroscopic properties of Ce-doped yttrium orthoaluminate (Ce:YAlO3 or Ce:YAP) crystals grown by temperature gradient technique (TGT) were investigated, and the effects of the growth conditions on the properties were analyzed.. Methods of optical absorption (OA), photoluminescence (PL), photoluminescence decay (PLD), X-ray excited luminescence (XL) and cathodeluminescence (CL) were used in these investigations. The results showed that the absorption band peak at 202, 394 and 532 nm originated from F and F+ color center induced by the weak reducing growth atmosphere, green emission band near 500 ran derived from Ce3+ -Ce3+ pairs and band at 650 similar to 850 run from some unintentional impurity in crystals.

Three-photon-excited upconversion luminescence of YVO4 single crystal by infrared femtosecond laser irradiation

We report on the upconversion luminescence of a pure YVO4 single crystal excited by an infrared femtosecond laser. The luminescent spectra show that the upconversion luminescence comes from the transitions from the lowest excited states T-3(1), T-3(2) to the ground state (1)A(1) of the VO43-. The dependence of the fluorescence intensity on the pump power density of laser indicates that the conversion of infrared irradiation to visible emission is dominated by three-photon excitation process. We suggest that the simultaneous absorption of three infrared photons promotes the VO43- to excited states, which quickly cascade down to lowest excited states, and radiatively relax to ground states, resulting in the broad characteristic fluorescence of VO43-. (c) 2005 Optical Society of America.

Effects of annealing on the color, absorption spectra, and light yield of Ce : YAlO3 single crystal grown by the temperature gradient technique

YAlO3 single crystal doped with Ce3+ at concentration 1% was grown by the temperature gradient technique. The as-grown crystal was pink. After H-2 annealing or air annealing at 1400degreesC for 20 h, the crystal was turned into colorless. We concluded there were two kinds of color centers in the as-grown crystal. One is F+ center attributed to absorption band peaking at about 530 nm, the other is O- center attributed to absorption band peaking at about 390 nm. This color centers model can be applied in explaining the experiment phenomena including the color changes, the absorption spectra changes, and the light yield changes of Ce:YAP crystals before and after annealing. (C) 2004 American Institute of Physics.

Crystal growth and optical properties of Gd1.99-xYxCe.0.01SiO5 single crystals

Gd1.99-xYxCe0.01SiO5 (Ce:GYSO) crystals (x = 0, 0.0995, 0.199) have been grown by the Czochralski (Cz) method. Crystal structure and the distribution coefficients of Ce have been determined for all three crystals. Spectroscopic measurements indicate that optical transmittance and luminescence intensity of Gd1.99-xYxCe0.01SiO5 (x = 0.0995, 0.199) crystals are Substantially higher than those of Ce:Gd2SiO5 (Ce:GSO), especially at x = 0.0995, which makes them good candidate materials for scintillation applications. The particularly important result is that the alloyed Ce:GYSO crystals can be grown easily by the Cz method and, unlike Ce:GSO, they do not undergo cleavage during the growth process or subsequent mechanical treatment. (c) 2005 Elsevier B.V. All rights reserved.

Upconversion luminescence from E-2 state of Cr3+ in Al2O3 crystal by infrared femtosecond laser irradiation

Visible upconversion luminescence was observed in Cr3+: Al2O3 crystal under focused femtosecond laser irradiation. The luminescence spectra show that the upconversion luminescence originates from the E-2-(4)A(2) transition of Cr3+. The dependence of the fluorescence intensity of Cr3+ on the pump power reveals that a two-photon absorption process dominates in the conversion of infrared radiation to the visible emission. It is suggested that the simultaneous absorption of two infrared photons produces the population of upper excited states, which leads to the characteristic visible emission from E-2 state of Cr3+.

稀土焦硅酸盐Re2Si2O7闪烁晶体的研究进展

铈掺杂稀土焦硅酸盐系列晶体Re2Si2O7(其中Re=Lu3+、Y3+、Gd3+等)作为新型无机闪烁晶体材料，近来引起科研人员的关注。本文阐述了稀土焦硅酸盐系列晶体Re2Si2O7的结构、晶体生长方法、闪烁性能和有待进一步研究的问题。

Yb：YAG晶体的红外闪烁特性

用脉冲电子束激发测量了不同Yb^3+掺杂浓度的Yb：YAG晶体的红外(IR)闪烁发光性能。Yb：YAG晶体的IR闪烁发光具有高的光产额和长的衰减时间，但存在浓度猝灭效应和温度依赖关系。Yb：YAG晶体的IR闪烁性能还与晶体品质有关，相同掺杂浓度的Yb：YAG晶体，品质优异的会获得更高的光产额。这一初步的研究成果表明，部分掺Yb^3+晶体有可能用于医学成像装置。

Yb掺杂的YAlO<3/sub>单晶体的温梯法生长和光谱性能

The dark-brown colored 5 at% Yb-doped YAlO3 (Yb:YAP) single crystal was grown successfully by temperature gradient technique (TGT) for the first time. The TGT-grown Yb:YAP crystal with the perovskite structure and excellent crystallization perfection were confirmed by the X-ray diffractions techniques. The dark-brown color of TGT-Yb:YAP crystal turned into the colorless after annealing in the air at 1200 degrees C for 10h. The absorption spectra, LD-excited infrared emission and X-ray excited luminescence spectra of the air-annealed Yb:YAP single crystal were investigated at the room temperature. The results indicate that the TGT-Yb:YAP single crystals can be used for the laser and scintillation applications. (c) 2005 Elsevier B.V. All rights reserved.

Three-photon-excited upconversion luminescence of Ce3+: YAP crystal by femtosecond laser irradiation

Infrared to ultraviolet and visible upconversion luminescence was demonstrated in trivalent cerium doped YAlO3 crystal (Ce3+: YAP) under focused infrared femtosecond laser irradiation. The fluorescence spectra show that the upconverted luminescence comes from the 5d-4f transitions of trivalent cerium ions. The dependence of luminescence intensity of trivalent cerium on infrared pumping power reveals that the conversion of infrared radiation is dominated by three-photon excitation process. It is suggested that the simultaneous absorption of three infrared photons pumps the Ce3+ ion into upper 5d level, which quickly nonradiatively relax to lowest 5d level. Thereafter, the ions radiatively return to the ground states, leading to the characteristic emission of Ce3+. (c) 2005 Optical Society of America.

显微成像荧光屏用无机闪烁单晶薄膜的研究进展

随着第三代同步辐射源的出现，由荧光屏和CCD耦合组成的、具有亚微米级空间分辨率、快速在线成像功能的探测器在医疗、安检、工业、科研等领域将会得到广泛应用．本文主要综述了成像荧光屏用材料的概况和发展趋势，重点阐述了闪烁单晶薄膜的研究及发展情况．

Yb：YAG晶体的闪烁特性

通过不同Yb^3＋掺杂浓度（5％-30％，原子数分数）的Yb：YAG晶体的阴极射线发光谱、衰减时间、光输出及其温度依赖关系的测量，研究了Yb：YAG晶体的闪烁性能。不同Yh^3＋掺杂浓度的Yb：YAG晶体具有不同的光输出和猝灭温度，光输出随Yb^3＋掺杂浓度的增大而降低，猝灭温度则随掺杂浓度的增大而升高。室温下Yb：YAG晶体的发光衰减时间较短，均小于50ns。Yb^3＋掺杂浓度为5％的Yb：YAG晶体具有较高的光输出和较低的猝灭温度。

YAP：Ce闪烁晶体的光致激发荧光衰减常数测量

用波长为266nm的激光激发不同尺寸、不同掺Ce^3＋浓度的YAP：Ce闪烁晶体，测量其光致激光荧光衰减常数，测量结果表明：YAP：Ce闪烁晶体的光致荧光衰减常数约为18．2ns，且与实验晶体厚度及Ce^3＋掺杂浓度（0．1％～0．6％原子分数）无关。