Complex potentials and singular integral equation for curve crack problem in antiplane elasticity

Four types of the fundamental complex potential in antiplane elasticity are introduced: (a) a point dislocation, (b) a concentrated force, (c) a dislocation doublet and (d) a concentrated force doublet. It is proven that if the axis of the concentrated force doublet is perpendicular to the direction of the dislocation doublet, the relevant complex potentials are equivalent. Using the obtained complex potentials, a singular integral equation for the curve crack problem is introduced. Some particular features of the obtained singular integral equation are discussed, and numerical solutions and examples are given.

Flow Characteristics of Non-Polar Organic Liquids with Small Molecules in a Microchannel

用去离子水及有机液体在内径约为25μm的石英圆管内进行了流量特性实验.液体分子量范围为18～160,动力黏性系数的范围为0.5～1 mPa.s.实验雷诺数范围为Re<8.所用有机液体为:四氯化碳、乙基苯及环己烷都是非极性液体,其分子结构尺度小于1 nm.实验结果表明,在定常层流条件下,圆管内的液体流量与两端压力差成正比,其压力-流量关系仍符合经典的Hagen-Poiseuille流动.这说明非极性小分子有机液体在本实验所用微米尺度管道中其流动规律仍符合连续介质假设.鉴于微尺度流动实验的特殊性,文中还介绍了微流动实验装置,分析了微尺度流动测量误差来源及提高测量精度的措施.

Numerical estimate of the stability curve for the flow past a rotating cylinder

It is demonstrated that the primary instability of the wake of a two-dimensional circular cylinder rotating with constant angular velocity can be qualitatively well described by the Landau equation. The coefficients of the Landau equation are determined by means of numerical simulations for the Navier-Stokes equations. The critical Reynolds numbers, which depend on the angular velocity of the cylinder, are evaluated correctly by linear regression. (C) 2004 American Institute of Physics.

Study on the Mechanical Properties of the Tetrahydrofuran Hydrate Deposit

Pure tetrahydrofuran hydrate and tetrahydrofuran hydrate deposits with different materials as the skeleton are synthesized in our laboratory. A series of experiments are carried out to study the mechanical properties. The stress-strain curve, strength of pure tetrahydrofuran hydrate and hydrate deposit are obtained. Some phenomenon is explained.

Enhancement of ultrafast four-wave mixing in a polar molecule medium

We investigate the ultrafast four-wave mixing (FWM) with two-color few-cycle ultrashort pulses propagating in a two-level polar molecule medium. It is found that the enhancement of FWM can be achieved even for low intensity pulses due to the effects of permanent dipole moments (PDM) in polar molecules. Moreover, the conversion efficiency of FWM can be controlled by the carrier-envelope phases (CEP) of two ultrashort pulses. (c) 2006 Optical Society of America

Coherent population accumulations of multiphoton transitions induced by an ultrashort pulse train in polar molecules

Coherent population accumulations of multiphoton transitions induced by an ultrashort pulse train in a two-level polar molecule are investigated theoretically by solving the density-matrix equations without invoking any of the standard approximations. It is shown due to the effects of permanent dipole moments, that the population accumulation of multiphoton transitions can be obtained in the polar molecule. Moreover, the population accumulations depend crucially on the relative phase between two sequential pulses, and the period in which the maximum population accumulation occurs is 2 pi/N in N-photon transitions.

Carrier-envelope phase dependence of few-cycle ultrashort laser pulse propagation in a polar molecule medium

We theoretically investigate carrier-envelope phase dependence of few-cycle ultrashort laser pulse propagation in a polar molecule medium. Our results show that a soliton pulse can be generated during the two-photon resonant propagation of few-cycle pulse in the polar molecule medium. Moreover, the main features of the soliton pulse, such as pulse duration and intensity, depend crucially on the carrier-envelope phase of the incident pulse, which could be utilized to determine the carrier-envelope phase of a few-cycle ultrashort laser pulse from a mode-locked oscillator.

Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films

A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.