Comparison of laser performances of 5at.% Yb : Gd2xY2(1-x)SiO5 crystals between different cutting directions

We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x = 0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9 W. In contrast, the sample cut parallel reaches only 1.65 W at 1044 nm with a slope elLiciency of 33.76% with absorbed pump power of 7.99 W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68 nm to 1084.82 nm.

Influences of phase shift on superresolution performances of annular filters

This paper investigates the influences of phase shift on superresolution performances of annular filters. Firstly, it investigates the influence of phase shift on axial superresolution. It proves theoretically that axial superresolution can not be obtained by two-zone phase filter with phase shift pi, and it gets the phase shift with which axial superresolution can be brought by two-zone phase filter. Secondly, it studies the influence of phase shift on transverse superresolution. It finds that the three-zone phase filter with arbitrary phase shift has an almost equal optimal transverse gain to that of commonly used three-zone phase filter, but can produce a much higher axial superresolution gain. Thirdly, it investigates the influence of phase shift on three-dimensional superresolution. Three-dimensional superresolution capability and design margin of three-zone complex filter with arbitrary phase shift are obtained, which presents the theoretical basis for three-dimensional superresolution design. Finally, it investigates the influence of phase shift on focal shift. To obtain desired focal shifts, it designs a series of three-zone phase filters with different phase shifts. A spatial light modulator (SLM) is used to implement the designed filters. By regulating the voltage imposed on the SLM, an accurate focal shift control is obtained.

Effects of atmosphere visibility on performances of non-line-of-sight ultraviolet communication systems

Dependence of performances of non-line-of-sight (NLOS) solar-blind ultraviolet (UV) communication systems on atmosphere visibility is investigated numerically by correlating the propagation of UV radiation with the visibility. A simplified solar-blind UV atmospheric propagation model is introduced, and the NLOS UV communication system model is constituted based on the single scattering assumption. Using the model, numerical simulation is conducted for two typical geometry configurations and different modulation formats. The results indicate that the performance of the NLOS UV communication system is insensitive to variation of visibility in quite a large range, and deteriorates significantly only in very low-visibility weather, and is also dependent on the geometry configuration of the system. The results also show that the pulse position modulation (PPM) is preferable due to its high-power efficiency to improve the system performance. (c) 2007 Elsevier GmbH. All rights reserved.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Volt-ampere characteristics, nozzle temperature and thruster performances in a low power argon arcjet

Argon gas with simple atomic structure and favorite arcing stability at low input power was used as the propellant. The thruster with a regeneratively cooled nozzle were tested in a vacuum system capable of keeping the chamber pressure at about 10 Pa at a propellant feeding rate of 5 slm. Arc current, arc voltage, thrust, nozzle temperature and propellant feeding rate were measured in situ simultaneously. Effects of the working parameters such as the propellant feeding rate and arc current on the thruster performances, mainly the produced thrust, specific impulse and thrust efficiency, were examined. The variation of arc volt-ampere characteristics with running time and the effect of nozzle temperature on thruster property are discussed.

The time and energy signals, counter plateau, energy resolution and gas gains performances of a new kind of micro-pattern gaseous detector-Micromegas

In present paper, a new Micromegas detector is developed, and its time and energy signals are obtained in the figure form. The rising time of fast time signal is less than 2 ns due to the very fast collection of avalanche electrons, and the rising time of the energy pulse is about 100 ns, which is corresponding to the total collecting time of the electrons and ions in the avalanche process. The counter plateau, energy resolution and the gas gains of the detector have been compared with other groups' experimental results and the Garfield simulation result.

Post-steam-treatment of Mo/HZSM-5 catalysts: An alternative and effective approach for enhancing their catalytic performances of methane dehydroaromatization

Post-steam-treatment is a facile and effective method for improving the catalytic performances of Mo/HZSM-5 catalysts in methane dehydroaromatization under nonoxidative conditions. The treatment can enhance the stability of the catalyst and also give a higher methane conversion and a higher yield of light aromatics, as well as a decrease in the formation rate of carbonaceous deposits. (27)Al, (29)Si, and (1)H multinuclear magic angle spinning nuclear magnetic resonance, X-ray photoelectron spectroscopy, X-ray diffraction, X-ray fluorescence spectroscopy, and thermogravimetric analysis measurements as well as catalytic reaction evaluations were employed to conduct comparative studies on the properties of the catalysts before and after the post-steam-treatment. The results revealed that the number of free Bronsted acid sites per unit cell decreased, while more Mo species migrated into the HZSM-5 channels for the 6Mo/HZSM-5 catalysts after the post-steam-treatment. In addition, the average pore diameter was also larger for the post-steam-treated catalysts, and this was advantageous for mass transport of the reaction products. However, a severe post-steam-treatment, i.e., with longer treating time, of the 6Mo/HZSM-5 catalyst will lead to the formation of the Al(2)(MoO(4))(3) phases, which is detrimental to the reaction.