火成岩储层裂缝识别、预测理论与方法研究－以济阳坳陷火成岩油藏为例

Since 1970s, igneous reservoirs such as Shang741, Bin674 and Luol51 have been found in Jiyang depression, which are enrichment and heavy-producing. Showing good prospect of exploration and development, igneous reservoirs have been the main part of increasing reserves and production in Shengli oilfield. As fracture igneous reservoir being an extraordinary complex concealed reservoir and showing heavy heterogeneity in spatial distribution, the study of recognition, prediction, formation mechanism and the law of distribution of fracture is essential to develop the reservoir. Guided by multiple discipline theory such as sedimentology, geophysics, mineralogy, petroleum geology, structural geology and reservoir engineering, a set of theories and methods of recognition and prediction of fractured igneous rock reservoir are formed in this paper. Rock data, three-dimensional seismic data, log data, borehole log data, testing data and production data are combined in these methods by the means of computer. Based on the research of igneous rock petrography and reservoir formation mechanism, emphasized on the assessment and forecast of igneous rock reservoir, aimed at establishing a nonhomogeneity quantification model of fractured igneous rock reservoir, the creativity on the fracture recognition, prediction and formation mechanism are achieved. The research result is applied to Jiyang depression, suggestion of exploration and development for fractured igneous rock reservoir is supplied and some great achievement and favourable economic effect are achieved. The main achievements are gained as follows: 1. The main facies models of igneous rock reservoir in JiYang depression are summarized. Based on data and techniques of seism, well log and logging,started from the research of single well rock facies, proceeded by seismic and log facies research, from point to line and line to face, the regional igneous facies models are established. And hypabyssal intrusion allgovite facies model, explosion volcaniclastic rock facies model and overfall basaltic rocks facies model are the main facies models of igneous rock reservoir in JiYang depression. 2. Four nonhomogenous reservoir models of igneous reservoirs are established, which is the base of fracture prediction and recognition. According to characteristics of igneous petrology and spatial types of reservoir, igneous reservoirs of Jiyang depression are divided into four categories: fractured irruptive rock reservoir, fracture-pore thermocontact metamorphic rock and irruptive rock compound reservoir, pore volcanic debris cone reservoir and fracture-pore overfall basaltic rock reservoir. The spatial distribution of each model's reservoir has its features. And reservoirs can be divided into primary ones and secondary ones, whose mechanism of formation and laws of distribution are studied in this paper. 3. Eight geologic factors which dominate igneous reservoirs are presented. The eight geologic factors which dominates igneous reservoirs are igneous facies, epigenetic tectonics deformation, fracture motion, intensity of intrusive effect and adjoining-rock characters, thermo-contact metamorphic rock facies, specific volcano-tectonic position, magmatic cyclicity and epigenetic diagenetic evolution. The interaction of the eight factors forms the four types nonhomogenous reservoir models of igneous reservoirs in Jiyang depression. And igneous facies and fracture motion are the most important and primary factors. 4. Identification patterns of seismic, well log and logging facies of igneous rocks are established. Igneous rocks of Jiyang depression show typical reflecting features on seismic profile. Tabular reflection seismic facies, arc reflection seismic facies and hummocky or mushroom reflection seismic facies are the three main facies. Logging response features of basic basalt and diabase are shown as typical "three low and two high", which means low natural gamma value, low interval transit-time, low neutron porosity, high resistivity and high density. Volcaniclastic rocks show "two high and three low"-high neutron porosity, high interval transit-time, low density, low-resistance and low natural gamma value. Thermo-contact metamorphic rocks surrounding to diabase show "four high and two low" on log data, which is high natural gamma value, high self-potential anomaly, high neutron porosity, high interval transit-time and low density and low-resistance. Based on seismic, well log and logging data, spatial shape of Shang 741 igneous rock is described. 5. The methods of fracture prediction and recognition for fractured igneous reservoir are summarized. Adopting FMI image log and nuclear magnetic resonance log to quantitative analysis of fractured igneous reservoir and according to formation mechanism and shape of fracture, various fractures are recognized, such as high-angle fracture, low-angle fracture, vertical fracture, reticulated fracture, induced fracture, infilling fracture and corrosion vug. Shang 741 intrusive rock reservoir can be divided into pore-vug compound type, pore fracture type, micro-pore and micro-fracture type. Physical properties parameters of the reservoir are computed and single-well fracture model and reservoir parameters model are established. 6. Various comprehensive methods of fracture prediction and recognition for fractured igneous reservoir are put forward. Adopting three-element (igneous facies, fracture motion and rock bending) geologic comprehensive reservoir evaluation technique and deep-shallow unconventional laterolog constrained inversion technique, lateral prediction of fractured reservoir such as Shang 741 is taken and nonhomogeneity quantification models of reservoirs are established.

Neutron source from thin foil confined by two laser pulses

Neutron production from a thin deuterium-tritium (D-T) foil irradiated by two intense femtosecond laser pulses from opposite sides with zero phase difference is studied analytically and numerically. For the interaction of a laser pulse of amplitude a = 7, focal area 100 mu m(2) and areal density 4.4 x 10(18) cm(-2) with a D-T plasma foil, about 1.17 x 10(21) neutron s(-1) can be obtained, much more than from other methods. The profiles of the ion and electron densities are also calculated.

Effect of laser spot size on fusion neutron yield in laser-deuterium cluster interactions

The effect of the laser spot size on the neutron yield of table-top nuclear fusion from explosions of a femtosecond intense laser pulse heated deuterium clusters is investigated by using a simplified model, in which the cluster size distribution and the energy attenuation of the laser as it propagates through the cluster jet are taken into account. It has been found that there exists a proper laser spot size for the maximum fusion neutron yield for a given laser pulse and a specific deuterium gas cluster jet. The proper spot size, which is dependent on the laser parameters and the cluster jet parameters, has been calculated and compared with the available experimental data. A reasonable agreement between the calculated results and the published experimental results is found.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon

A novel method, based on an infrared absorption and neutron irradiation technique, has been developed for the determination of interstitial oxygen in heavily boron-doped silicon. The new procedure utilizes fast neutron irradiated silicon wafer specimens. On fast neutron irradiation, the free carriers of high concentration in silicon can be trapped by the irradiated defects and the resistivity increased. The resulting calibration curve for the measurement of interstitial oxygen in boron-doped silicon has been established on the basis of the annealing behaviour of irradiated boron-doped CZ silicon.

CHARACTERIZATION OF HIGH FLUENCE NEUTRON-INDUCED DEFECT LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS USING A LASER DEEP-LEVEL TRANSIENT SPECTROSCOPY (L-DLTS)

Neutron irradiated high resistivity (4-6 kOMEGA-cm) silicon detectors in the neutron fluence (PHI(n)) range of 5 X 10(11) n/cm2 to 1 X 10(14) n/cm2 have been studied using a laser deep level transient spectroscopy (L-DLTS). It has been found that the A-center (oxygen-vacancy, E(c) = 0.17 eV) concentration increases with neutron fluence, reaching a maximum at PHI(n) almost-equal-to 5 X 10(12) n/cm2 before decreasing with PHI(n). A broad peak has been found between 200 K and 300 K, which is the result of the overlap of three single levels: the V-V- (E(c) = 0.38 eV), the E-center (P-V, E(c) = 0.44 eV), and a level at E(c) = 0.56 eV that is probably V-V0. At low neutron fluences (PHI(n) < 5 X 10(12) n/cm2), this broad peak is dominated by V-V- and the E-centers. However, as the fluence increases (PHI(n) greater-than-or-equal-to 5 X 10(12) n/cm2), the peak becomes dominated by the level of E(c) = 0.56 eV.