Relation between Stabilization Energy, Crystal Field Coefficient and the Magnetic Exchange Interaction for Tb3+ Ion

Based on a single ion model, Hamiltonian of the simplest form about magnetocrystalline anisotropy for Tb3+ ion was solved by using the numerical method. The relation between the stabilization energy, crystal field coefficient B-2(0) and the magnetic exchange interaction was studied as temperature approaches to 0 K. The results show that the stabilization energy contributed by Tb3+ is linear with crystal field coefficient B-2(0) approximately, but it is insensitive to the change of magnetic exchange interaction for the strong magnetic substances such as TbCo5, Tb2Co17 and Tb2Fe14B compounds.

Syntheses, crystal structures and magnetic properties of two heterometallic coordination polymers

Two heterometallic chain coordination polymers with the chemical formula {[Cu2Mn2L2(CH3OH)(H2O)] center dot 0.5CH(3)OH center dot 0.5CH(3)CH(2)OH}(n) (1) and {[Cu2Co2L2(H2O)(2)] center dot H2O}(n) (2) have been synthesized and characterized by IR, UV spectroscopy and single-crystal X-ray structural analysis, where H4L = 2-hydroxy-3-[(E)-({2-[(2-hydroxybetizoyl)amino]ethyl}imino)methyl] benzoic acid. Magnetic measurements showed that the two compounds exhibit antiferromagnetic coupling exchange interactions, and satisfactory fittings to the observed magnetic susceptibility data were obtained by assuming a linear four-spin arrangement with two isotropic magnetic exchange interactions.

Synthesis, crystal structure and magnetic properties of a chain coordination polymer {[Cu4L2(H2O)] center dot H2O}(n)

A chain coordination polymer with the chemical formula {[Cu4L2(H2O)] (.) H2O)(n), has been synthesized by the assembly reaction of K(2)CuL(.)1.5H(2)O and Cu(OAC)(2)(H2O)-H-. with a 1:1 mole ratio in methanol., where H4L=2-hydroxy-3-[(E)-({2-[(2-hydroxybenzoyl)imino]ethyl I imino)methyl] benzoic acid, OAC(-) = CH3COO-. The crystal structure was determined by single-crystal X-ray diffraction analysis, the compound has chain molecular structure formed by dissymmetrical tetranuclear units. The magnetic measurements showed that Cu-Cu of the complex exhibit antiferromagnetic interactions, and satisfactory fittings to the observed magnetic susceptibility data were obtained by assuming a binuclear system, and further using molecular field approximation to deal with magnetic exchange interactions between binuclear systems.

Studies on the synthetic, structural, electrical and magnetic properties of Ln(n)MCo(n)O(3n+1) (Ln=Sm, Gd; M=Sr, Ba; n=1,2)

Three new oxides Sm2SrCo2O7, Sm2BaCo2O7 and Gd2SrCo2O7 have been synthesized successfully by solid state reaction mathod. The X-Ray diffraction spectra show that they are all isostructural with Sr3Ti2O7, and Ln(2)SrCo(2)O(7)(Ln=Sm,Gd) crystallized in tetragonal system, Sm2BaCo2O7 in orthrhombic system. The Co-O bonds in CoO2 planes of Ln(2)SrCo(2)O(7) are shorter than those of LnSrCoO(4)(Ln=Sm, Gd), and so their delectrons are more delocalized and their electrical resistivities are smaller. The electrical resistivities versus temperature in the range 300 similar to 1100K showed that the five brides show the characters of weakly localized systems. In the lower temperature range, the magnetic behaviors of Gd2SrCo2O7 and GdSrCoO4 fit Curie-Weiss law well, and the magnetic exchange reaction in CoO2 sublattices of Gd2SrCo2O7 is ferromagnetic, but that of GdSrCoO4 is antiferromagnetic. The other three oxides with Sm3+ showed complex magnetic behaviors which is perhaps related with the complexity of Sm3+.

CRYSTAL-STRUCTURES AND MOSSBAUER-SPECTRA OF LAFE1-XMNXO3 AND LAFE1-XCOXO3 (X=0 TO 0.9)

The crystal structures and Mossbauer spectra of various mixed oxides LaFe1-xMnxO3 and LaFe1-xCoxO3 (x = 0 to 0.9) are determined and measured at room temperature. The results indicate that the crystal structure of both the La-Fe-Mn-O and the La-Fe-Co-O sy

Interlayer segregation in magnetic multilayers and its influence on exchange coupling

Experimental results show that the exchange coupling field (H-ex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. X-ray photoelectron spectroscopy shows that Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. While studying Ta/X(X=Bi,Pb,Ag,In)/NiFe/FeMn multilayers, we also find that X atoms segregate to the NiFe/FeMn interface, which results in a decrease of the H-ex. However, a small amount of Bi, Pb, etc. deposited between Cu and pinned NiFe layer for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers can increase H-ex. (C) 2003 American Institute of Physics.

Domain structure of hard magnetic NdAlFeCo bulk metallic glass

Magnetic domain structure of hard magnetic Nd60Al10Fe20Co10 bulk metallic glass (BMG) has been studied by using magnetic force microscopy. In the magnetic force images it is shown that the exchange interaction type magnetic domains with a period of about 360 nm do exist in the BMG, which is believed to be associated with the appearance of hard-magnetic properties in this system. As the scale of the magnetic domain is much larger than the size of the short-range ordered atomic clusters existing in the BMG, it is believed that the large areas of magnetic contrast are actually a collection of a group of clusters aligned in parallel by strong exchange coupling interaction. After fully crystallization, the BMG exhibits paramagnetism. No obvious magnetic contrast is observed in the magnetic force images of fully crystallized samples, except for a small quantity of ferromagnetic crystalline phase with low coercivity and an average size of 900 nm.

Spin states in semiconductor quantum dot with a single magnetic ion

We investigate theoretically CdTe quantum dots containing a single Mn2+ impurity, including the sp-d exchange interaction between carriers and the magnetic ion and the short-range exchange interaction between electron and hole. We find anticrossing behaviors in the energy spectrum of the electron-hole (e-h) pair that arise from the interplay between exchange interactions and the magnetic field. In addition to the s-d exchange interaction, we find that other mechanisms inducing the anticrossings become important in the strong heavy hole-light hole (hh-lh) mixing regime. The transition strengths between the states with spin projection of Mn2+ ion S-z not equal -5/2 (S-z = -5/2) decrease (increase) with increasing magnetic fields due to the alignment of the Mn2+ spin. The spin splitting of the e-h pair states depends sensitively on the external magnetic and electric field, which reveals useful information about the spin orientation and position of the magnetic ion. Meanwhile, the manipulation of the position of the magnetic ion offers us a way to control the spin splitting of the carriers. (C) 2008 Elsevier B.V. All rights reserved.

Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations

Based on the density functional theory, we study the magnetic coupling properties of Mn-doped ZnO nanowires. For the nanowires with passivated surfaces, the antiferromagnetic state is found and the Mn atoms have a clustering tendency. When the distance between two Mn atoms is large, the system energetically favors the paramagnetic or spin-glass state. For the nanowires with unpassivated surfaces, the ferromagnetic (FM) coupling states appear between the two nearest Mn atoms, and the zinc vacancies can further stabilize the FM states between them. The electrons with enough concentration possibly mediate the FM coupling due to the negative exchange splitting of conduction band minimum induced by the s-d coupling, which could be useful in nanomaterial design for spintronics. (C) 2008 American Institute of Physics.

Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As

Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (Ga,Mn)As diluted magnetic semiconductors (DMS). An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed (Ga,Mn)As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect. (c) 2008 American Institute of Physics.

Spin states and persistent currents in a quantum ring with an embedded magnetic impurity

Spin states and persistent currents are investigated theoretically in a quantum ring with an embedded magnetic ion under a uniform magnetic field including the spin-orbit interactions. The magnetic impurity acts as a spin-dependent delta-potential for electrons and results in gaps in the energy spectrum, consequently suppressing the oscillation of the persistent currents. The competition between the Zeeman splittings and the s-d exchange interaction leads to a transition of the electron ground state in the ring. The interplay between the periodic potential induced by the Rashba and Dresselhaus spin-orbit interactions and the delta-potential induced by the magnetic impurity leads to significant variation in the energy spectrum, charge density distribution, and persistent currents of electrons in the ring.

Properties of exchange interaction in Yb3Fe5O12 under extreme conditions

In Yb3Fe5O12, the exchange effective field can be expressed as H-eff = -lambda center dot center dot center dot M-Fe = -lambda chi(eff)center dot center dot center dot H-e = -gamma center dot center dot center dot H-e where gamma is named as the exchange field parameter and H-e is the external magnetic field. Then, in this paper, by the discussions on the characteristics of the exchange field parameter gamma, the properties of exchange interaction in ytterbium iron garnet (Yb3Fe5O12) are analyzed under extreme conditions (high magnetic fields and low temperatures). Our theory suggests that the exchange field parameter gamma is the function of the temperatures under different external magnetic fields, and gamma = a+b center dot center dot center dot T+c center dot center dot center dot T-2, where the coefficients a, b, c are associated with the external magnetic fields and the magnetized directions. Thus, the temperature-dependence, field-dependence and anisotropic characteristics of the exchange interaction in Yb3Fe5O12 are revealed. Also, excellent fits to the available experiments are obtained. (C) 2009 Elsevier B.V. All rights reserved.

Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles

High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high-temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V-N). We investigate the structural and electronic properties of V-N, single Cr atom, Cr-Cr atom pairs, Cr-V-N pairs, and so on. In each case, the most stable structure is obtained by comparing different atomic configurations optimized in terms of the total energy and the force on every atom, and then it is used to calculate the defect formation energy and study the electronic structures. Our total-energy calculations show that the nearest substitutional Cr-Cr pair with the two spins in parallel is the most favorable and the nearest Cr-V-N pair makes a stable complex. Our formation energies indicate that V-N regions can be formed spontaneously under N-poor condition because the minimal V-N formation energy equals -0.23 eV or Cr-doped regions with high enough concentrations can be formed under N-rich condition because the Cr formation energy equals 0.04 eV, and hence real Cr-doped AlN samples are formed by forming some Cr-doped regions and separated V-N regions and through subsequent atomic relaxation during annealing. Both of the single Cr atom and the N vacancy create filled electronic states in the semiconductor gap of AlN. N vacancies enhance the ferromagnetism by adding mu(B) to the Cr moment each but reduce the ferromagnetic exchange constants between the spins in the nearest Cr-Cr pairs. These calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidate the mechanism for the ferromagnetism and to explore high-performance Cr-doped AlN diluted magnetic semiconductors.

Electron and hole states in diluted magnetic semiconductor quantum dots

The electronic structure of a diluted magnetic semiconductor (DMS) quantum dot (QD) is studied within the framework of the effective-mass theory. We find that the energies of the electron with different spin orientation exhibit different behavior as a function of magnetic field at small magnetic fields. The energies of the hole decreases rapidly at low magnetic fields and saturate at higher magnetic field due to the sp-d exchange interaction between the carriers and the magnetic ions. The mixing effect of the hole states in the DMS QD can be tuned by changing the external magnetic field. An interesting crossing behavior of the hole ground state between the heavy-hole state and the light-hole state is found with variation of the QD radius. The strength of the interband optical transition for different circular polarization exhibts quite different behavior with increasing magnetic field and QD radius.

Spin-polarized ballistic transport in diluted magnetic semiconductor quantum wire systems

The energy dispersion of an electron in a double quantum wire with a diluted magnetic semiconductor barrier in between is calculated. An external magnetic field modifies significantly the energy dispersion of the electron which is different for the two spin states. The conductance exhibits many interesting peaks and dips which are directly related to the energy dispersions of the different electron spin states. These phenomena are attributed to the interwell coupling which can be tuned by the magnetic field due to the s-d exchange interaction.