C~(q+)和O~(q+)与原子碰撞的电子俘获过程的理论研究

在ECPSSR理论的基础上,利用OBKN近似描述电子俘获过程,得到了包括电子俘获过程贡献的ECPSSR理论,编写了相应的计算程序。采用该程序计算了不同电荷态离子与多种靶原子碰撞的电子俘获截面和相应的X射线产生截面,将计算得到的包含电子俘获过程贡献的X射线产生截面与实验结果进行了比较。对于具有满K壳层的入射离子碰撞,X射线产生截面与入射离子电荷态基本无关;对于以直接电离为主导的碰撞过程,计算得到的X射线产生截面与实验数据符合得很好;对于全裸和单K空穴入射离子的碰撞,计算高估了X射线产生截面。

银鲫卵黄原的诱导、分离纯化及其生化鉴定

以雄性银鲫为实验材料 ,通过雌二醇 (Estradiol- 1 7β,E2 )的多次诱导 ,使得 E2 诱导产物成为血清中的主要蛋白。而后 ,在快速蛋白液相色谱 (FPL C)系统上 ,利用高交换量的阴离子交换层析 Q柱 ,成功的从血清中提纯了与雌性特异蛋白相一致的 E2 诱导产物。糖、磷、脂蛋白分析表明 ,它是一类糖磷脂蛋白大分子。同时 ,它能被 Mg2 + - Ethylenediamine tetraaceticacid(Mg2 + - EDTA)部分沉淀 ,这进一步证明 ,与雌性特异蛋白相一致的

Boron isotopic fractionation during seawater evaporation

IEECAS SKLLQG

Strong temperature dependence and no moss photosynthesis in winter CO2 flux for a Kobresia meadow on the Qinghai-Tibetan plateau

We examined the CO2 exchange of a Kobresia meadow ecosystem on the Qinghai-Tibetan plateau using a chamber system. CO2 efflux from the ecosystem was strongly dependence on soil surface temperature. The COZ efflux-temperature relationship was identical under both light and dark conditions, indicating that no photosynthesis could be detected under light conditions during the measurement period. The temperature sensitivity (Q(10)) of the COZ efflux showed a marked transition around -1.0 degrees C; Q(10) was 2.14 at soil surface temperatures above and equal to -1.0 degrees C but was 15.3 at temperatures below -1.0 degrees C. Our findings suggest that soil surface temperature was the major factor controlling winter COZ flux for the alpine meadow ecosystem and that freeze-thaw cycles at the soil surface layer play an important role in the temperature dependence of winter CO2 flux. (c) 2005 Elsevier Ltd. All rights reserved.

控制热力学条件下的矿物、岩石电学性质研究

电导率是重要的地球物理参数。模拟地球内部条件下的矿物、岩石电导率测量是了解地球内部物质组成及物理化学性质的有效手段，同时，还可以为野外大地电磁测量结果的解释提供依据。在YJ-紧装式六面顶压机上，对原有的矿物、岩石电性测量系统进行了进一步的改进；建立了一套以Solartron 1260阻抗／增益一相位分析仪为测试仪器，使用Mo电极和Mo盾来控制样品氧逸度的测量系统，该系统的氧逸度环境为Mo-MoO2，接近Iw缓冲对。石英（人造水晶）、橄榄石、纯橄榄岩、辉石岩、二辉橄榄岩、巨晶辉石的电导率测量是在新的测量系统下获得的，而辉长岩的电导率测量是基于LCR仪为测量仪器的测试系统下获得的。在压力为1-3GPa、温度为675K-160OK、频率为106-0.1Hz、氧逸度为Mo-MoO2的条件下，对不同方向石英（人造水晶）的电学性质进行了研究。复阻抗平面上出现了反映样品本身性质的阻抗弧和反映样品与电极之间扩散的直线。石英的电导率随温度增加而增加，随压力的变化比较微弱。石英的导电机制主要为离子导电，载流子可能为碱金属离子和氢离子，这些碱金属离子和氢离子主要在平行于光轴的通道中运动。在相同的温度和压力条件下，a石英的电导率和c轴的夹角有关，石英的电导率随着夹角的增大而减小，表现出了强烈的各向异性。对“各个方向石英在发生了相变前后的电导率进行了研究，发现Q石英转变为p石英后，电导率并没有突变，仍然随着温度的增加而增加。在压力为1-2GP。、温度为563-1173K、频率为12-105Hz的条件下研究了辉长岩的阻抗。结果发现辉长岩复阻抗的实部随频率的增加而减小，而虚部随频率增加先增大后减小；相角随频率增加而减小。在复阻抗平面上出现了反映颗粒内部的阻抗弧，该阻抗弧出现在高频段。实验室获得辉长岩在地壳的压力和温度（1.0GP。和893K）条件下的电导率值为1.77×-4S／m，而高导层的电导率值为0-01-0-15S／m，二者相差了2-3个数量级，推断辉长岩不能在下地壳形成高导层。在压力为3.0GPa、温度为1299-1600K、频率为106-0.1Hz、氧逸度为Mo-MoO2条件下，对不同颗粒粒度的橄榄石电导率进行了测量。在复阻抗平面上均出现了反映颗粒内部电响应的阻抗弧，这些阻抗弧随着温度的增加而减小。而反映颗粒边界导电机制的阻抗弧并不明显，两种阻抗弧出现在不同的频率范围内，反映颗粒内部导电机制的阻抗弧出现在频率较高的范围内，而反映颗粒边界导电机制的阻抗弧出现在频率相对低的范围内。不同粒度橄榄石在3.0GPa条件下的电导率随着温度的增加而增加，它们的激化烩介于1.03-2.11ev之间。在压力为1-3GPa、温度为1282-1544K、频率为0.1-106Hz、氧逸度为MO-MoO2的条件下，对纯橄榄岩的电导率进行了测量。在复阻抗平面上出现了反映颗粒内部电响应和颗粒边界电响应的阻抗弧。反映颗粒内部导电的阻抗弧出现在较高的频率段，随着温度的增加，这些阻抗弧逐渐收缩。颗粒边界的阻抗弧出现在相对低的频率段。纯橄榄岩的电导率随着温度增加而增加，随压力变化比较微弱。对颗粒边界的电导率研究表明，颗粒边界的电导率高于颗粒内部的电导率，总电导率则小于颗粒内部和颗粒边界的电导率，颗粒边界并没有增强总电导率。纯橄榄岩的激化能为1，62eV，而激化体积为0.67cm3／mol，指前因子为5125加。利用实验所获得的拟合参数，建立了地球内部200-40Okm处的电导率模型，并同地球物理模型进行了对比，在温度和氧逸度的合理波动范围内，实验室电导率模型和地球物理模型吻合的很好。在压力为1-2GPa、温度为1228-1584K、频率为0.1-106Hz、氧逸度为MO-MoO2条件下，测量了天然和热压辉石岩、热压巨晶辉石、二辉橄榄岩的电导率。结果发现，在复阻抗平面上出现了反映颗粒内部电响应和颗粒边界电响应的阻抗弧，反映颗粒内部导电的阻抗弧出现在较高的频率段，随着温度的增加，这些阻抗弧逐渐收缩。颗粒边界的阻抗弧出现在相对低的频率段。辉石岩、二辉橄榄岩、巨晶辉石电导率随着温度增加而增加，随压力变化比较微弱。天然辉石岩和热压辉石岩颗粒边界的电导率高于它们各自颗粒内部的电导率，而总电导率则小于颗粒内部和颗粒边界的电导率，颗粒边界并没有增强总电导率。辉石岩一二辉橄榄岩一纯橄榄岩的电导率依次减小，这可能是与它们的铁含量有关。天然辉石岩的电导率与热压辉石岩的电导率的差异可能与样品中的水（氢）含量的不同有关。

Diode-pumped continuous wave and Q-switched operation of a c-cut Tm,Ho:YAlO3 laser

We report on a diode-pumped, cryogenic and room temperature operation of a Tm,Ho:YAlO3 (c-cut) laser. In a temperature of 77 K, an optical-optical conversion efficiency of 27% and a slope efficiency of 29% were achieved with the maximum continuous-wave (CW) output power of 5.0 W at 2.13 mu m. Acousto-optic switched operation was performed at pulse repetition frequency (PRF) from 1 kHz to 10 kHz, the highest pulse energy of 3.3 mJ in a pulse duration of 40 ns was obtained. In room temperature (RT), the maximum CW power of Tm,Ho:YAlO3 laser was 160 mW with a slope efficiency of 11% corresponding to the absorbed pump power. (C) 2008 Optical Society of America.

TMVA, a snake C-type lectin-like protein from Trimeresurus mucrosquamatus venom, activates platelet via GPIb

TMVA is a C-type lectin-like protein with potent platelet activating activity from Trimeresurus mucrosquamatus venom. In the absence of von Willebrand factor (vWF), TMVA dose-dependently induced aggregation of washed platelets. Anti-GP Ib monoclonal antib

Purification and cloning of a novel C-type lectin-like protein with platelet aggregation activity from Trimeresurus mucrosquamatus venom

TMVA, a novel C-type lectin-like protein that induces platelet aggregation in a dose-dependent manner, was purified from the venom of Trimeresurus mucrosquamatus. It consists of two subunits, alpha (15,536 Da) and beta (14,873 Da). The mature amino acid sequences of the a (135 amino acids) and beta subunits (123 amino acids) were deduced from cloned cDNAs. Both of the sequences show great similarity to C-type lectin-like venom proteins, including a carbohydrate recognition domain. The cysteine residues of TMVA are conserved at positions corresponding to those of flavocetin-A and convulxin, including the additional Cys135 in the alpha subunit and Cys3 in the beta subunit. SDS-PAGE, mass spectrometry analysis and amino acid sequence showed that native TMVA exists as two convertible multimers Of (alphabeta)(2) and (alphabeta)(4) with molecular weights of 63,680 and 128,518 Da, respectively. The (alphabeta)(2) complex is stabilized by an interchain disulfide bridge between the two alphabeta-heterodimers, whereas the stabilization of the (alphabeta)(4) complex seems to involve non-covalent interactions between the (alphabeta)(2) complexes. (C) 2002 Elsevier Science Ltd. All rights reserved.

Photoluminescence from C+ ion-implanted and electrochemical etched Si layers

The microstructural and optical analysis of Si layers emitting blue luminescence at about 431 nm is reported. These structures have been synthesized by C+ ion implantation and high-temperature annealing in hydrogen atmosphere and electrochemical etching sequentially. With the increasing etching time, the intensity of the blue peak increases at first, decreases then and is substituted by a new red peak at 716 nm at last, which shows characteristics of the emission of porous silicon. C=O compounds are induced during C+ implantation and nanometer silicon with embedded structure is formed during annealing, which contributes to the blue emission. The possible mechanism of photoluminescence is presented. (c) 2005 Elsevier B.V. All rights reserved.