Relationships between precipitation, soil water and groundwater at Chongling catchment with the typical vegetation cover in the Taihang mountainous region, China

Vegetation cover plays an important role in the process of evaporation and infiltration. To explore the relationships between precipitation, soil water and groundwater in Taihang mountainous region, China, precipitation, soil water and water table were observed from 2004 to 2006, and precipitation, soil water and groundwater were sampled in 2004 and 2005 for oxygen-18 and deuterium analysis at Chongling catchment. The soil water was sampled at three sites covered by grass (Carex humilis and Carex lanceolata), acacia and arborvitae respectively. Precipitation is mainly concentrated in rainy seasons and has no significant spatial variance in study area. The stable isotopic compositions are enriched in precipitation and soil water due to the evaporation. The analysis of soil water potential and isotopic profiles shows that evaporation of soil water under arborvitae cover is weaker than under grass and acacia, while soil water evaporation under grass and acacia showed no significant difference. Both delta O-18 profiles and soil water potential dynamics reveal that the soil under acacia allows the most rapid infiltration rate, which may be related to preferential flow. In the process of infiltration after a rainstorm, antecedent water still takes up over 30% of water in the topsoil. The soil water between depths of 0-115 cm under grass has a residence time of about 20 days in the rainy season. Groundwater recharge from precipitation mainly occurs in the rainy season, especially when rainstorms or successive heavy rain events happen.

Spectroscopic properties and Judd-Ofelt theory analysis of Dy3+ doped oxyfluoride silicate glass

Dy3+ doped oxyfluoride silicate glass was prepared and its optical absorption, 1.3 mu m emission, and upconversion luminescence properties were studied. Furthermore, the Judd-Ofelt [Phys. Rev. 127, 750 (1962); J. Chem. Phys. 37, 511 (1962)] intensity parameters, oscillator strengths, spontaneous transition probability, fluorescence branching ratio and radiative lifetime were calculated by Judd-Ofelt theory, while stimulated emission cross section of H-6(9/2)+F-6(11/2)-> H-6(15/2) transition was calculated by McCumber theory [Phys. Rev. A. 134, 299 (1964)]. According to the obtained Judd-Ofelt intensity parameters Omega(2)=2.69x10(-20) cm(2), Omega(4)=1.64x10(-20) cm(2), and Omega(6)=1.64x10(-20) cm(2), the radiative lifetime was calculated to be 810 mu s for 1.3 mu m emission, whose full width at half maximum and sigma(e) were 115 nm and 2.21x10(-20)cm(2), respectively. In addition, near infrared to visible upconversion luminescence was observed and evaluated. The results suggest that Dy3+ doped oxyfluoride silicate glass can be used as potential host material for developing broadband optical amplifiers and laser applications.

苔藓植物一些东亚特有属的分子系统学研究

苔藓是高等植物（有胚植物或陆地植物）中最原始的一类，但种类却丰富多样，其形态和生长环境的多样化程度高于蕨类和裸子植物，且对极端环境的忍耐力更强，分布范围也更广。“特有”是一个地理概念，它是相对广布而言，当一个类群的分布范围有一定的限制时即为特有现象。“东亚特有”是指分布范围主要局限于中国，朝鲜，日本和蒙古等，向北可及俄罗斯远东地区，少数可分布至中国南部相邻地区的植物类群。东亚地区主要以温带植物区系为主，但也包含一些热带植物区系成分，还因为第四纪以来受冰川活动影响较少，因此植物种类非常丰富。东亚地区也是苔藓植物的多样性中心之一，这里有较多的特有成分。在我国总共分布有苔藓植物东亚特有属35属，其中苔类5属，藓类30属。长期以来，特有成分始终引起人们的极大关注，不仅是因为其在植物地理学上的重要性，还因为特有类群中包含了孓遗类群，往往系统位置比较关键，此外，大部分特有类群对人为干扰比较敏感，对其保护就愈加重要，因为它在这个地区的消失就意味着一个类群的灭绝。 我国对苔藓植物东亚特有类群已有较好的认识，在前人知识积累的基础之上，我们期望通过分子系统学的方法，开展对东亚特有苔藓属的研究，逐步揭开特有属植物的神秘面纱，最终在系统树上找到它们各自应该属于自己的位置。 在本次研究中，我们总共得到十一个苔藓植物东亚特有属的新鲜材料。在实验室中我们对这十一个特有属叶绿体和核的六个基因（叶绿体atpB, rbcL, cp-SSU, cp-LSU 和核18S，26S rDNA）进行了测序，并在此基础之上，构建了来自苔藓植物106个属上述六个基因的联合矩阵，并对它们进行了系统学分析。本文所选十一个特有属中除三个苔类属和一个线齿藓类的属之外，其它七个特有属都属于侧蒴藓类。根据近几年的研究结果，侧蒴藓类中灰藓目被认为是起源自一次快速辐射演化，灰藓目各科之间的关系以及各科的范围都很难确定。即便本实验测序一万多bp，这一支之内的关系仍不能解决。 在以上结果的基础上，本文对线齿藓类的树发藓属（Microdendron）进行了较为详细的研究，我们用最大简约法分析了金发藓目15属，33种的18S, rbcL和trnL-F序列的联合矩阵。对树发藓属的微形态进行了电镜扫描。形态和分子数据的分析结果表明，这个特有属在属级水平是不成立的，它仅是小金发藓属的一个种。此结果支持将这个东亚特有属降为种的等级。此外，本文还对囊绒苔属（Trichocoleopsis）和新绒苔属（Neotrichocolea）的系统位置做了比较详细的研究。我们分别分析了一个苔类植物57属的四基因（cp-SSU, cp-LSU, atpB and rbcL）矩阵和一个苔类植物24属的九基因（cp-SSU, cp-LSU, atpB, psbA, rps4, rbcL, 18S, 26S and nad5）联合矩阵，结果显示囊绒苔属和新绒苔属互为姐妹群关系，而毛叶苔属（Ptilidium）又是它们二者的姐妹群。研究结果支持了囊绒苔属和新绒苔属组成新绒苔科（Neotrichocoleaceae），而不同于前人的观点：将上述两属放置于毛叶苔科（Ptilidiaceae）、绒苔科（Trichocoleaceae）或多囊苔科（Lepidolaenaceae）。另外值得注意的是这两个特有属和毛叶苔属组成的一支位于叶苔类（Leafy liverwort）中“Leafy I”和“Leafy II”两大支之间，但这一支确切的系统位置没有解决，仍有待于进一步研究。 除此之外，本文还利用GenBank中的数据对东亚特有属日鳞苔属（Nipponolejeunea）和耳坠苔属（Ascidiota）（未获得实验材料）进行了初步的系统学分析。结果表明传统上放在细鳞苔科的日鳞苔属与毛耳苔科的毛耳苔属（Jubula）为姐妹群关系，建议将日鳞苔属置于毛耳苔科;耳坠苔属是光萼苔科的成员，属的分类等级是合理的。 最后本文利用罚分似然法，选取多个化石作为标定点，对来自苔藓植物主要类群及其它陆地植物共115个类群5个基因（atpB, rbcL, cp-SSU, cp-LSU, 18S）的矩阵进行了分子钟的分析，初步估算11个东亚特有属的分化时间。

How polluted is the Yangtze River? Water quality downstream from the Three Gorges Dam

The concentrations of major anions and cations, nitrogen and phosphorus, dissolved and particulate trace elements, and organic pollutants were determined for the middle and lower reaches of the Yangtze River (Changjiang) from below the Three Gorges Dam (TGD) to the mouth at Shanghai in November 2006. The concentration of dissolved inorganic phosphate (DIP) was constant at a low level of 6-8 mu gP/L, but the concentration of nitrate (NO3-) approximately doubled downstream and was closely correlated with K+. This translated to a daily load of well over 1000 It of dissolved inorganic nitrogen (DIN) at Datong. The average concentrations of dissolved Pb (0.078 +/- 0.023 mu g/L), Cd (0.024 +/- 0.009 mu g/L), Cr(0.57 +/- 0.09 mu g/L), Cu (1.9 +/- 0.7 mu g/L), and Ni (0.50 +/- 0.49 mu g/L) were comparable with those in other major world rivers, while As (3.3 +/- 1.3 mu g/L) and Zn (1.5 +/- 0.6 mu g/L) were higher by factors of 5.5 and 2.5, respectively. The trace element contents of suspended particles of As (31 +/- 28 mu g/g), Pb (83 +/- 34 mu g/g), and Ni (52 +/- 16 mu g/g) were close to maximum concentrations recommended for rivers by the European Community (EC). The average concentrations of Cd (2.6 +/- 1.6 mu g/g), Cr (185 +/- 102 mu g/g), Cu (115 +/- 106 mu g/g), and Zn (500 +/- 300 mu g/g) exceeded the EC standards by a factor of two, and Hg (4.4 +/- 4.7 mu g/g) by a factor of 4 to 5. Locally occurring peak concentrations exceed these values up to fourfold, among them the notorious elements As, Hg, and Tl. All dissolved and particulate trace element concentrations were higher than estimates made twenty years ago [Zhang, J., Geochemistry of trace metals from Chinese river/estuary systems: an overview. Estuar Coast Shelf Sci 1995; 41: 631-658.]. The enormous loads of anthropogenic pollutants disposed to the river were diluted by the large water discharge of the Yangtze even during the lowest flow resulting in the relatively low concentration levels of trace elements and organic pollutants observed. We estimated loads of e.g. As, Pb and Ni to the East China Sea to be about 4600 kg As d(-1), 3000 kg Pb d(-1), and 2000 kg Ni d(-1). About 6000 t d(-1) of dissolved organic carbon (DOC) was delivered into the sea at the time of our cruise. We tested for 236 organic pollutants, and only the most infamous were found to be barely above detection limits. We estimated that the load of chlorinated compounds, aromatic hydrocarbons, phenols, and PAHs were between 500 and 3500 kg d(-1). We also detected eight herbicides entering the estuary with loads of 5-350 kg d(-1). The pollutant load, even when at low concentrations, are considerable and pose an increasing threat to the health of the East China Sea ecosystem. (c) 2008 Elsevier B.V. All rights reserved.

Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

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Multimode interference 3-dB coupler in silicon-on-insulator based on silicon rib waveguides with trapezoidal cross section

A 3-dB multimode interference optical coupler based on rib waveguides with trapezoidal cross section was designed and fabricated on silicon-on-insulator wafer. Potassium hydroxide (KOH) anisotropic chemical etching of silicon was used to fabricate the waveguides to obtain smooth interface. A modified finite-difference beam propagation method was used to simulate the multimode rib waveguide with slope interfaces. The rms roughness of etching interface is as small as 1.49 nm. The propagation loss of the waveguide is 1.3 dB/cm at wavelength of 1.55 mum. The fabricated 3-dB coupler has a good uniformity of 0.2 dB.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Magnetic properties of Mn-implanted n-type Ge

Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 10(16) cm(-2). Subsequent annealing was performed on the samples at 400 degreesC and 600 degreesC in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples. (C) 2004 Elsevier B.V. All rights reserved.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105

Thick GaN films were grown on sapphire in a home-made vertical HVPE reactor. Effect of nucleation treatments on the properties of GaN films was investigated, including the nitridation of sapphire, low temperature GaN buffer and MOCVD-template. Various material characterization techniques, including AFM, SEM, XRD, CL and PL have been used to assess these GaN epitaxial films. It was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. In addition, smooth Ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. This may be caused by the atoms re-arrangement because of oxidation. The roughness of N-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. The low temperature GaN buffer gown at 650 degrees C is favorable for subsequent epitaxial film, which had narrow FWHM of 307 arcsec. The epitaxial growth on MOCVD-template directly came into quasi-2D growth mode due to enough nucleation centers, and high quality GaN films were acquired with the values of the FWHM of 141 arcsec for (002) reflections. After etching in boiled KOH, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. The photoluminescence spectrum of GaN film on the MOCVD-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

I：端羟基液体聚丁二烯的氯化 II：氯化端羟基液体聚丁二烯的固化

合成了一系列氯含量不同的氯化丁羟（氯含量为5％～68％）。利用红外光谱、核磁共振观察了氯含量不同的氯化丁羟的双键变化。通过氯含量－5反应时间的关系及上述观察结果表明；丁羟在四氯化碳中进行氯化，首先进行加成反应，待双键饱和后，进行取代反应。用红外光谱观察了丁羟在氯化反应中三种微观结构的变化，观察了氯化高顺式聚丁二烯的双键变化，对氯化丁羟的赤苏异构体的碳－氯键红外光密度比值，进行了分析。这些观察和分析说明；丁羟在四氯化碳中氯化，存在着顺－反异构化反应。较详细地研究了影响交联反应的主要因素，利用低聚物的特点，通过数均分子量和粘度表征了交联反应程度。从而观察到，交联反应伴随着氯化反应之中，交联程度随着反应液中羟浓度的提高，随着反应时间的延长而增大。在一定反应液浓度下交联程度可以减小到很低程度，得到完全可溶的氯化丁羟。反应温度对交联反应在20～76℃范围无显著影响。提出了以氯乙醇为调节剂合成液体氯化丁羟的方法。实验结果说明，氯乙醇比文献中得到的乙醇在抑制交联反应，提高氯含量方面效果更好。氯化丁羟的羟值分析结果表明，丁羟的羟值在氯化反应中没有损失。这对氯化丁羟作为遥瓜型低聚物应用，在进行固化反应时，是非常重要的。随着溶剂介电常数的提高，出现凝胶的极限浓度也提高。根据这一实验和上述各项实验结果，基于烯类化合物氯化反应的一些基础研究工作。我们认为，在丁羟的氯化反应中，存在着两种反应机理；离子机理的加成，导致可溶氯化产物，自由基机理除加成外，导致交联，顺－反异构化反应。II 氯化丁羟与TDI的反应为二级反应。DBTDL（二月桂酸二丁基锡）对本固化反应有明显的催化效果。在100 ℃，以DBTDL为催化剂的固化反应中，氯化丁羟与TDI的反应速度常数为11.9 * 10~(-3)（升／克分子·秒），这个反应活化能为5.5千卡／克分子。合成了一系列的氯化丁羟聚氨酯。红外光谱测试结果表明，NH基分为两个红外吸收峰；3440 cm~(-1), 3310 cm~(-1)。高波频峰的为游离的NH基，低波频峰为缔合的NH基，其缔合度为88％。同时，表征了氯化丁羟聚氨酯的主要红外光谱吸收峰。研究了氯化丁羟聚氨酯的形态结构。透射电子微显镜示出氯化丁羟聚氨酯的微相分离区域结构，其硬段区域结构的尺寸大约趋于在0.7～1.6μ范围内（硬段含量30％）。差热分析和示差扫描量热分析结果一致表明，氯化丁羟聚氨酯在60 ℃-90 ℃范围内有一宽而弱的吸热转变区，在115 ℃左右有一吸热峰，它们归因于硬段区域结构的热转变。宽角X光衍射实验没有观察到明显的结晶吸收峰的存在。这个实验结果主要与氯化丁羟聚氨酯的无规、侧基及不对称的结构特点有关。初步实验结果显示出，氯化丁羟聚氨酯具有优异的粘结性能，其抗剪强度约是丁羟聚氨酯的六倍。通过氧化锌的作用，可以提高氯化丁羟聚氨酯的抗张强度。因为粘结强度是水轮机耐磨耐汽蚀涂层研制中比较关键的因素，所以，这个实验结果是很有意义的。