Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.

Broadband ultrafast pulse generation with double wall carbon nanotubes

Materials with nonlinear optical properties are much sought after for ultrafast photonic applications. Mode-locked lasers can generate ultrafast pulses using saturable absorbers[1]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs). However, narrow tuning range (tens of nm), complex fabrication and packaging limit their applications[2]. Single wall nanotubes (SWNTs) and graphene offer simpler and cost-effective solutions[1]. Broadband operation can be achieved in SWNTs using a distribution of tube diameters[1,3], or by using graphene[4-8], due to the gapless linear dispersion of Dirac electrons[8,9]. © 2011 IEEE.

Ultrafast and high-energy pulsed lasers with graphene mode-lockers

The conventional technology for generating ultrashort pulses relies on soliton-like operation based mode-locking. In this regime, the pulse duration is limited by nonlinear optical effects[1]. One method to mitigate these effects is to alternate segments of normal and anomalous group velocity dispersion (GVD) fiber[1]. This configuration is known as dispersion-managed soliton design. It decreases the nonlinear optical effects and reduces the pulse duration[1]. © 2011 IEEE.

Wideband tunable, high-power, graphene mode-locked ultrafast lasers

Ultrafast passively mode-locked lasers with spectral tuning capability and high output power have widespread applications in biomedical research, spectroscopy and telecommunications [1,2]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs) [2,3]. However, these typically have a narrow tuning range, and require complex fabrication and packaging [2,3]. A simple, cost-effective alternative is to use Single Wall Carbon Nanotubes (SWNTs) [4,10] and Graphene [10,14]. Wide-band operation is possible using SWNTs with a wide diameter distribution [5,10]. However, SWNTs not in resonance are not used and may contribute to unwanted insertion losses [10]. The linear dispersion of the Dirac electrons in graphene offers an ideal solution for wideband ultrafast pulse generation [10,15]. © 2011 IEEE.

Ultrafast non-thermal electron dynamics in single layer graphene

We study the ultrafast dynamics of non-thermal electron relaxation in graphene upon impulsive excitation. The 10-fs resolution two color pump-probe allows us to unveil the non-equilibrium electron gas decay at early times. © 2012 OSA.

Q-switched modelocking using carbon nanotubes in an ultrafast laser inscribed ytterbium doped bismuthate glass waveguide laser

Passive modelocking using carbon nanotubes is achieved in a linear cavity waveguide laser realized by ultrafast laser inscription in ytterbium doped bismuthate glass. The pulses observed under a Q-switched envelope have a repetition rate of 1.5 GHz. © 2012 OSA.