11 resultados para temperature rise

em Cambridge University Engineering Department Publications Database


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Following the miniaturization of photonic devices and the increase in data rates, the issues of self heating and heat removal in active nanophotonic devices should be considered and studied in more details. In this paper we use the approach of Scanning Thermal Microscopy (SThM) to obtain an image of the temperature field of a silicon micro ring resonator with sub-micron spatial resolution. The temperature rise in the device is a result of self heating which is caused by free carrier absorption in the doped silicon. The temperature is measured locally and directly using a temperature sensitive AFM probe. We show that this local temperature measurement is feasible in the photonic device despite the perturbation that is introduced by the probe. Using the above method we observed a significant self heating of about 10 degrees within the device.

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We present for the first time a comprehensive study of the static and dynamic properties of a coolerless tunable three-section DBR laser. Wavelength tuning and thermal drift under uncooled conditions are investigated. Variance of modulation bandwidth with temperature rise and wavelength control is studied, and then verified by uncooled direct modulation performance with clear open eye diagrams. Satisfactory direct modulation is demonstrated at bit rate of up to 6Gbit/s, which is believed to be the fastest out of devices of similar structure so far.

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The annealing behaviour of doses up to 4. 10**1**6 ions/cm**2 implanted at ion currents up to 10ma is described. Differences between rapid isothermal and furnace annealing in the measured sheet resistances are due to different amounts of diffusion and to loss of dopant by evaporation. Implantation at high currents (10ma) does not appear to affect the quality of the regrown material provided the temperature rise during implantation is small.

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An advanced beam propagation model was developed to show that the far field narrows with good suppression of higher order modes for an appropriate temperature rise, without significant power penalty. To verify the accuracy of the model, the dependence of far field pattern on bias conditions were assessed both experimentally and theoretically, initially under pulsed conditions to reduce thermal effects. The results highlight the optimum taper angle and the role of local heating effects.

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Three-phase induction motors offer significant advantages over commutator motors in some domestic appliances. Models for wide speed range three-phase induction motors for use in a horizontal axis washing machine have been developed using the MEGA finite element package with an external formulation for calculating iron losses. Motor loss predictions have been verified using a novel high accuracy calorimeter. Good agreement has been observed over a wide speed range at different loadings. The model is used to predict motor temperature rise under typical washing machine loading conditions to ensure its limiting temperature is not exceeded and enables alternative designs to be investigated without recourse to physical prototypes. © 2005 IEEE.

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The successful utilization of an array of silicon on insulator complementary metal oxide semiconductor (SOICMOS) micro thermal shear stress sensors for flow measurements at macro-scale is demonstrated. The sensors use CMOS aluminum metallization as the sensing material and are embedded in low thermal conductivity silicon oxide membranes. They have been fabricated using a commercial 1 μm SOI-CMOS process and a post-CMOS DRIE back etch. The sensors with two different sizes were evaluated. The small sensors (18.5 ×18.5 μm2 sensing area on 266 × 266 μm2 oxide membrane) have an ultra low power (100 °C temperature rise at 6mW) and a small time constant of only 5.46 μs which corresponds to a cut-off frequency of 122 kHz. The large sensors (130 × 130 μm2 sensing area on 500 × 500 μm2 membrane) have a time constant of 9.82 μs (cut-off frequency of 67.9 kHz). The sensors' performance has proven to be robust under transonic and supersonic flow conditions. Also, they have successfully identified laminar, separated, transitional and turbulent boundary layers in a low speed flow. © 2008 IEEE.

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The ability to generate a permanent, stable magnetic field unsupported by an electromotive force is fundamental to a variety of engineering applications. Bulk high temperature superconducting (HTS) materials can trap magnetic fields of magnitude over ten times higher than the maximum field produced by conventional magnets, which is limited practically to rather less than 2 T. In this paper, two large c-axis oriented, single-grain YBCO and GdBCO bulk superconductors are magnetized by the pulsed field magnetization (PFM) technique at temperatures of 40 and 65 K and the characteristics of the resulting trapped field profile are investigated with a view of magnetizing such samples as trapped field magnets (TFMs) in situ inside a trapped flux-type superconducting electric machine. A comparison is made between the temperatures at which the pulsed magnetic field is applied and the results have strong implications for the optimum operating temperature for TFMs in trapped flux-type superconducting electric machines. The effects of inhomogeneities, which occur during the growth process of single-grain bulk superconductors, on the trapped field and maximum temperature rise in the sample are modelled numerically using a 3D finite-element model based on the H-formulation and implemented in Comsol Multiphysics 4.3a. The results agree qualitatively with the observed experimental results, in that inhomogeneities act to distort the trapped field profile and reduce the magnitude of the trapped field due to localized heating within the sample and preferential movement and pinning of flux lines around the growth section regions (GSRs) and growth sector boundaries (GSBs), respectively. The modelling framework will allow further investigation of various inhomogeneities that arise during the processing of (RE)BCO bulk superconductors, including inhomogeneous Jc distributions and the presence of current-limiting grain boundaries and cracks, and it can be used to assist optimization of processing and PFM techniques for practical bulk superconductor applications. © 2014 IOP Publishing Ltd.

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Physical connection and disconnection control has practical meanings for robot applications. Compared to conventional connection mechanisms, bonding involving a thermal process could provide high connection strength, high repeatability, and power-free connection maintenance, etc. In terms of disconnection, an established bond can be easily weakened with a temperature rise of the material used to form the bond. Hot melt adhesives (HMAs) are such material that can form adhesive bonds with any solid surfaces through a thermally induced solidification process. This paper proposes a novel control method for automatic connection and disconnection based on HMAs. More specifically, mathematical models are first established to describe the flowing behavior of HMAs at higher temperatures, as well as the temperature-dependent strength of an established HMA bond. These models are then validated with a specific type of HMA in a minimalistic robot setup equipped with two mechatronic devices for automated material handling. The validated models are eventually used for determining open parameters in a feedback controller for the robot to perform a pick-and-place task. Through a series of trials with different wooden and aluminum parts, we evaluate the performance of the automatic connection and disconnection methods in terms of speed, energy consumption, and robustness. © 1996-2012 IEEE.

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We predict by first-principles calculations that p-doped graphane is an electron-phonon superconductor with a critical temperature above the boiling point of liquid nitrogen. The unique strength of the chemical bonds between carbon atoms and the large density of electronic states at the Fermi energy arising from the reduced dimensionality give rise to a giant Kohn anomaly in the optical phonon dispersions and push the superconducting critical temperature above 90 K. As evidence of graphane was recently reported, and doping of related materials such as graphene, diamond, and carbon nanostructures is well established, superconducting graphane may be feasible.

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Thin film bulk acoustic wave resonator (FBAR) devices supporting simultaneously multiple resonance modes have been designed for gravimetric sensing. The mechanism for dual-mode generation within a single device has been discussed, and theoretical calculations based on finite element analysis allowed the fabrication of FBARs whose resonance modes have opposite reactions to temperature changes; one of the modes exhibiting a positive frequency shift for a rise of temperature whilst the other mode exhibits a negative shift. Both modes exhibit negative frequency shift for a mass load and hence by monitoring simultaneously both modes it is possible to distinguish whether a change in the resonance frequency is due to a mass load or temperature variation (or a combination of both), avoiding false positive/negative responses in gravimetric sensing without the need of additional reference devices or complex electronics.

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Thin film bulk acoustic wave resonator (FBAR) devices supporting simultaneously multiple resonance modes have been designed for gravimetric sensing. The mechanism for dual-mode generation within a single device has been discussed, and theoretical calculations based on finite element analysis allowed the fabrication of FBARs whose resonance modes have opposite reactions to temperature changes; one of the modes exhibiting a positive frequency shift for a rise of temperature whilst the other mode exhibits a negative shift. Both modes exhibit negative frequency shift for a mass load and hence by monitoring simultaneously both modes it is possible to distinguish whether a change in the resonance frequency is due to a mass load or temperature variation (or a combination of both), avoiding false positive/negative responses in gravimetric sensing without the need of additional reference devices or complex electronics. © 2012 Elsevier B.V.