Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

Gain-switched dynamics of tapered waveguide bow-tie lasers

The use of tapered waveguide lasers and amplifiers for enhanced picosecond pulse generation has led to order-of-magnitude peak power and pulse energy improvements. Monolithic pulse generation schemes have so far relied on a double-tapered bow-tie structure. The modeling of tapered lasers has so far been limited to steady-state operation or has lacked experimental comparison. This paper considers both experimentally and theoretically the gain-switched performance of bow-tie lasers of various taper angles. The role of transverse-mode spatial hole burning in tapered waveguide lasers is thereby investigated.

Beam propagation modelling of tapered waveguide lasers

A dynamic beam propagation model allows design optimization of high power low divergence tapered waveguide lasers. The model is extended to include spatially-resolved temperature profiles and a temperature dependent gain. Using this model, design parameters such as the optimum facet reflectivity, taper angle, and waveguide dimension can be calculated for low far-field divergence and high continuous wave power.

Design of high power tapered waveguide semiconductor lasers

An advanced beam propagation model was developed to show that the far field narrows with good suppression of higher order modes for an appropriate temperature rise, without significant power penalty. To verify the accuracy of the model, the dependence of far field pattern on bias conditions were assessed both experimentally and theoretically, initially under pulsed conditions to reduce thermal effects. The results highlight the optimum taper angle and the role of local heating effects.

The foundations of a new approach to additive manufacturing: Characteristics of free space metal deposition

In this paper, we report on the realisation of a free space deposition process (FSD). For the first time the use of a moving support structure to deposit tracks of metal starting from a substrate and extending into free space is characterised. The ability to write metal shapes in free space has wide ranging applications in additive manufacturing and rapid prototyping where the tracks can be layered to build overhanging features without the use of fixed support structures (such as is used in selective laser melting (SLM) and stereo lithography (SLA)). We demonstrate and perform a preliminary characterisation of the process in which a soldering iron was used to deposit lead free solder tracks. The factors affecting the stability of tracks and the effect of operating parameters, temperature, velocity, initial track starting diameter and starting volume were measured. A series of 10 tracks at each setting were compared with a control group of tracks; the track width, taper and variation between tracks were compared. Notable results in free space track deposition were that the initial track diameter and volume affected the repeatability and quality of tracks. The standard deviation of mean track width of tracks from the constrained initial diameter group were half that of the unconstrained group. The amount of material fed to the soldering iron before commencing deposition affected the taper of tracks. At an initial volume of 7 mm3 and an initial track diameter of 0.8 mm, none of the ten tracks deposited broke or showed taper > ∼1°. The maximum deposition velocity for free space track deposition using lead-free solder was limited to 1.5 mm s-1. © 2011 Elsevier B.V. All rights reserved.