Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

The properties of amorphous carbon (a-C) deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp3 fraction was found to strongly depend on the ion energy, giving a highly sp3 bonded a-C denoted as tetrahedral amorphous carbon (ta-C) at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp2 above a transition temperature, T1, of ≈200°C. Furthermore, T1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition temperature which we attribute to the medium range order of sp2 sites. We attribute the variation in film properties with the deposition temperature to diffusion of interstitials to the surface above T1 due to thermal activation, leading to the relaxation of density in context of a growth model. © 1997 American Institute of Physics.

Assessment of the contribution of surface roughness to airframe noise

The generation of sound by turbulent boundary-layer flow at low Mach number over a rough wall is investigated by applying a theoretical model that describes the scattering of the turbulence near field into sound by roughness elements. Attention is focused on the numerical method to approximately quantify the absolute level of far-field radiated roughness noise. Models for the source statistics are obtained by scaling smooth-wall data by the increased skin friction velocity and boundary-layer thickness for a rough surface. Numerical integration is performed to determine the roughness noise, and it reproduces the spectral characteristics of the available empirical formula and experimental data. Experiments are conducted to measure the radiated sound from two rough plates in an open jet The measured noise spectra of the rough plates are above that of a smooth plate in 1-2.5 kHz frequency and exhibit reasonable agreement with the predicted level. Estimates of the roughness noise for a Boeing 757 sized aircraft wing with idealized levels of surface roughness show that hi the high-frequency region the sound radiated from surface roughness may exceed that from the trailing edge, and higher overall sound pressure levels are observed for the roughness noise. The trailing edge noise is also enhanced by surface roughness somewhat A parametric study indicates that roughness height and roughness density significantly affect the roughness noise with roughness height having the dominant effect The roughness noise directivity varies with different levels of surface roughness. Copyright © 2007 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.