An integrated service-device-technology roadmap for smart city development

Firms and other organizations use Technology Roadmapping (TRM) extensively as a framework for supporting research and development of future technologies and products that could sustain a competitive advantage. While the importance of technology strategy has received more attention in recent years, few research studies have examined how roadmapping processes are used to explore the potential convergence of products and services that may be developed in the future. The aim of this paper is to introduce an integrated roadmapping process for services, devices and technologies capable of implementing a smart city development R&D project in Korea. The paper applies a QFD (Quality Function Deployment) method to establish interconnections between services and devices, and between devices and technologies. The method is illustrated by a detailed case study, which shows how different types of roadmap can be coordinated with each other to produce a clear representation of the technological changes and uncertainties associated with the strategic planning of complex innovations. © 2012 Elsevier Inc.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Optical learning in a smart spatial light modulator

A synaptic plane rendered by an array of smart pixels was described regarding its application as a complementary component for neural network implementation. The smart spatial light modulator featured auto-modification abilities. Thus, an optical system incorporating this device can show self-reliant optical learning. Furthermore, the optical system design, in the area of its optical interconnection scheme, is highly flexible since the independent weight-plane pixels eliminated the difficulty between weight update calculation and weight representation.

The mobile arm support project as a test-bed for design research at the Cambridge EDC

A host of methods and tools to support designing are being developed in Cambridge EDC. These range from tools for design management to those for the generation and selection of design ideas, layouts, materials and production processes. A project, to develop a device to improve arm mobility of muscular dystrophy sufferers, is undertaken as a test-bed to evaluate and improve these methods and tools as well as to observe and modify its design and management processes. This paper presents the difficulties and advantages of using design methods and tools within this rehabilitation design context, with special focus on the evolution of the designs, tools, and management processes.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

Evaluation of Setup Procedures on Mobile Devices Based on Users’ Initial Experience

Users’ initial perceptions of their competence are key motivational factors for further use. However, initial tasks on a mobile operating system (OS) require setup procedures, which are currently largely inconsistent, do not provide users with clear, visible and immediate feedback on their actions, and require significant adjustment time for first-time users. This paper reports on a study with ten users, carried out to better understand how both prior experience and initial interaction with two touchscreen mobile interfaces (Apple iOS and Google Android) affected setup task performance and motivation. The results show that the reactions to setup on mobile interfaces appear to be partially dependent on which device was experienced first. Initial experience with lower-complexity devices improves performance on higher-complexity devices, but not vice versa. Based on these results, the paper proposes six guidelines for designers to design more intuitive and motivating user interfaces (UI) for setup procedures. The preliminary results indicate that these guidelines can contribute to the design of more inclusive mobile platforms and further work to validate these findings is proposed.

Quantum dots and nanowires for optoelectronic device applications

InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper. ©2006 IEEE.