Transmission performance of adaptively modulated optical OFDM modems using subcarrier modulation over SMF IMDD links for access and metropolitan area networks.

Detailed investigations are undertaken, for the first time, of the transmission performance of recently proposed novel Adaptively Modulated Optical OFDM (AMOOFDM) modems using Subcarrier Modulation (AMOOFDM-SCM) in single-channel, SMF-based IMDD links without optical amplification and chromatic dispersion compensation. The cross-talk effect induced by beatings among subcarriers of various types is a crucial factor limiting the maximum achievable AMOOFDM-SCM performance. By applying single sideband modulation and/or spectral gapping to AMOOFDM-SCM, three AMOOFDM-SCM designs of varying complexity are proposed, which achieve >60Gb/s signal transmission over 20 km, 40 km and 60 km. Such performances are >1.5 times higher than those supported by conventional AMOOFDM modems.

Feasibility of 100G ethernet enabled by carrierless amplitude/phase modulation and optical OFDM

For the first time, simulations have analysed the feasibility of 100Gb/s CAP and OFDM systems over SMF links using 18.6GHz directly modulated lasers. We have shown that CAP-16/16- QAM-OFDM and CAP-64/64-QAM-OFDM over a single channel can successfully support transmission over 2km SMF, with power dissipation of ∼2 times that of a 4×25Gb/s NRZ system. © 2012 OSA.

Feasibility of 100G ethernet enabled by carrierless amplitude/phase modulation and optical OFDM

For the first time, simulations have analysed the feasibility of 100Gb/s CAP and OFDM systems over SMF links using 18.6GHz directly modulated lasers. We have shown that CAP-16/16-QAM-OFDM and CAP-64/64-QAM-OFDM over a single channel can successfully support transmission over 2km SMF, with power dissipation of ∼2 times that of a 4×25Gb/s NRZ system. © 2012 Optical Society of America.

High Frequency Acousto-electric Single Photon Source

We propose a single optical photon source for quantum cryptography based on the acousto-electric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons which reside in the SAW minima and travel at the velocity of sound. In our scheme these electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single (or N) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated.

High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing

Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.

Single-photon detection using a quantum dot field effect transistor

A novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes is proposed. The optimal channel electron densities and quantum dot parameters for detection of single photons are discussed.

High-frequency acousto-electric single-photon source

We propose a single optical photon source for quantum cryptography based on the acoustoelectric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons that reside in the SAW minima and travel at the velocity of sound. In our scheme, the electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single- (or N-) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated. ©2000 The American Physical Society.

Nearest neighbour decoding and pilot-aided channel estimation in stationary Gaussian flat-fading channels

We study the information rates of non-coherent, stationary, Gaussian, multiple-input multiple-output (MIMO) flat-fading channels that are achievable with nearest neighbour decoding and pilot-aided channel estimation. In particular, we analyse the behaviour of these achievable rates in the limit as the signal-to-noise ratio (SNR) tends to infinity. We demonstrate that nearest neighbour decoding and pilot-aided channel estimation achieves the capacity pre-logwhich is defined as the limiting ratio of the capacity to the logarithm of SNR as the SNR tends to infinityof non-coherent multiple-input single-output (MISO) flat-fading channels, and it achieves the best so far known lower bound on the capacity pre-log of non-coherent MIMO flat-fading channels. © 2011 IEEE.

Cryogenic single-shot spectroscopy of a floating poly-silicon gate transistor

Trapped electrons, located close to the channel of a transistor, are promising as data storage elements in non-classical information processing. Cryogenic microwave spectroscopy has shown that these electrons give rise to high quality factor resonances in the drain current and a post excitation dynamic behaviour that is related to the system lifetime. Using a floating poly-silicon gate transistor, single shot spectroscopy is performed to characterise the dynamic behaviour during excitation. This behaviour is seen to be dominated by the decay of the transient component, which gives rise to oscillations around the high quality factor resonance. © 2012 American Institute of Physics.

Orthogonal multipulse modulation for 64 Gigabit Fibre Channel

Real-time orthogonal multipulse modulation is demonstrated at 56 Gb/s with transmission over 500 m of single-mode fiber. Up to 2 dBo power budget advantage is predicted relative to alternatives such as PAM4. © 2013 OSA.

Polychromatic single-shot spectroscopy on SOI-FET trapped electrons

The behavior of trapped electrons, in a dielectric close to the channel of a silicon SOI-FET, is studied by cryogenic microwave spectroscopy. On-resonance microwave excitation causes one of these trapped electrons to undergo spatial Rabi oscillations between widely separated trap sites. This charge displacement causes a change in the drain current of the transistor, resulting in high quality factor resonances in continuous wave spectroscopy. The potential of this effect for non-classical information processing is investigated through polychromatic single-shot spectroscopy, using on-resonance and difference frequencies. Interaction between different trapped electrons is seen in the post excitation behavior and the possibilities of quantum gate operations are discussed. © The Electrochemical Society.